STEM studies of MBE-grown corrugated structures of GaAs, InGaAs and AlAs on (7 5 7)B substrates

InGaAs and GaAs layers and GaAs/AlAs superlattice (SL) structures were grown by MBE on (7 5 7)B GaAs substrates and their corrugated growth fronts induced by the step bunching process were closely investigated by scanning transmission electron microscope (STEM). Cross-sectional images obtained from...

Full description

Saved in:
Bibliographic Details
Published inJournal of crystal growth Vol. 278; no. 1; pp. 569 - 574
Main Authors Noda, T., Sumida, N., Koshiba, S., Nishioka, S., Negi, Y., Okunishi, E., Akiyama, Y., Sakaki, H.
Format Journal Article
LanguageEnglish
Published Elsevier B.V 01.05.2005
Subjects
Online AccessGet full text

Cover

Loading…