STEM studies of MBE-grown corrugated structures of GaAs, InGaAs and AlAs on (7 5 7)B substrates

• Published in: Journal of crystal growth Vol. 278; no. 1; pp. 569 - 574
• Main Authors: Noda, T., Sumida, N., Koshiba, S., Nishioka, S., Negi, Y., Okunishi, E., Akiyama, Y., Sakaki, H.
• Format: Journal Article
• Language: English
• Published: Elsevier B.V 01.05.2005
• Subjects: A1. Diffusion; A1. Growth; A1. Step-bunching; A3. MBE; B1. Nanomaterials; A1. Step-bunching; 07.78; A1. Growth; A1. Diffusion; 68.65; A3. MBE; B1. Nanomaterials; 81.15.H; 68.35

InGaAs and GaAs layers and GaAs/AlAs superlattice (SL) structures were grown by MBE on (7 5 7)B GaAs substrates and their corrugated growth fronts induced by the step bunching process were closely investigated by scanning transmission electron microscope (STEM). Cross-sectional images obtained from...