STEM studies of MBE-grown corrugated structures of GaAs, InGaAs and AlAs on (7 5 7)B substrates

InGaAs and GaAs layers and GaAs/AlAs superlattice (SL) structures were grown by MBE on (7 5 7)B GaAs substrates and their corrugated growth fronts induced by the step bunching process were closely investigated by scanning transmission electron microscope (STEM). Cross-sectional images obtained from...

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Published inJournal of crystal growth Vol. 278; no. 1; pp. 569 - 574
Main Authors Noda, T., Sumida, N., Koshiba, S., Nishioka, S., Negi, Y., Okunishi, E., Akiyama, Y., Sakaki, H.
Format Journal Article
LanguageEnglish
Published Elsevier B.V 01.05.2005
Subjects
A1. Diffusion
A1. Growth
A1. Step-bunching
A3. MBE
B1. Nanomaterials
A1. Step-bunching
07.78
A1. Growth
A1. Diffusion
68.65
A3. MBE
B1. Nanomaterials
81.15.H
68.35
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Summary:InGaAs and GaAs layers and GaAs/AlAs superlattice (SL) structures were grown by MBE on (7 5 7)B GaAs substrates and their corrugated growth fronts induced by the step bunching process were closely investigated by scanning transmission electron microscope (STEM). Cross-sectional images obtained from the [ 1 0 1 ¯ ] direction have revealed asymmetries and other features of strongly corrugated InGaAs layers and a smoothing process in GaAs/AlAs SL layers.
Bibliography:ObjectType-Article-2
SourceType-Scholarly Journals-1
ObjectType-Feature-1
content type line 23
ISSN:0022-0248
1873-5002
DOI:10.1016/j.jcrysgro.2004.12.103