Surface analysis of polysilicon gate etching by pulsed-microwave plasma

• Published in: Japanese Journal of Applied Physics Vol. 53; no. 3S2; pp. 3 - 1-03DD04-9
• Main Authors: Matsui, Miyako, Morimoto, Michikazu, Ikeda, Norihiko, Yokogawa, Kenetsu
• Format: Journal Article
• Language: English
• Published: The Japan Society of Applied Physics 01.03.2014
• Subjects: Bias; Electric potential; Etching; Gates; Hydrocarbons; Microwave plasmas; Plasma (physics); Silicon dioxide; Voltage

The mechanism of highly selective etching by a pulsed-microwave electron-cyclotron-resonance plasma was investigated by analyzing surface-reaction layers formed on nonpatterned poly-Si and SiO2 samples and gate-patterned samples with a gate width of 32 nm. The samples were etched by using an HBr/O2/...