Power/Energy Minimization Techniques for Variability-Aware High-Performance 16-nm 6T-SRAM
Power and energy minimization is a critical concern for the battery life, reliability, and yield of many minimum-sized SRAMs. In this paper, we extend our previously proposed hybrid analytical-empirical model for minimizing and predicting the delay and delay variability of SRAMs, VAR-TX, to a new en...
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Published in | IEEE access Vol. 4; pp. 594 - 613 |
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Main Authors | , |
Format | Journal Article |
Language | English |
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2016
The Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
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Abstract | Power and energy minimization is a critical concern for the battery life, reliability, and yield of many minimum-sized SRAMs. In this paper, we extend our previously proposed hybrid analytical-empirical model for minimizing and predicting the delay and delay variability of SRAMs, VAR-TX, to a new enhanced version, exVAR-TX, to minimize and predict the power/energy and power/energy variability of a 16-nm 6T-SRAM under the influence of the three major types of variations: Fabrication, Operation, and Implementation. Using exVAR-TX for architectural optimization [exhaustively computing and comparing the range of feasible architectures subject to interdie (die-to-die/D2D) and intradie (within-die/WID) process and operation variations (PVT), electromigration (EM), negative bias temperature instability (NBTI), and soft-errors, among others] on top of deploying the most recent state of the art effective mitigation techniques we show that energy and energy-delay-product (EDP) of 64KB 16-nm 6T-SRAM could be reduced by ~12.5X and ~33%, respectively, as compared to the existing conventional designs. |
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AbstractList | Power and energy minimization is a critical concern for the battery life, reliability, and yield of many minimum-sized SRAMs. In this paper, we extend our previously proposed hybrid analytical-empirical model for minimizing and predicting the delay and delay variability of SRAMs, VAR-TX, to a new enhanced version, exVAR-TX, to minimize and predict the power/energy and power/energy variability of a 16-nm 6T-SRAM under the influence of the three major types of variations: Fabrication, Operation, and Implementation. Using exVAR-TX for architectural optimization [exhaustively computing and comparing the range of feasible architectures subject to interdie (die-to-die/D2D) and intradie (within-die/WID) process and operation variations (PVT), electromigration (EM), negative bias temperature instability (NBTI), and soft-errors, among others] on top of deploying the most recent state of the art effective mitigation techniques we show that energy and energy-delay-product (EDP) of 64KB 16-nm 6T-SRAM could be reduced by ~12.5X and ~33%, respectively, as compared to the existing conventional designs. |
Author | Samandari-Rad, Jeren Hughey, Richard |
Author_xml | – sequence: 1 givenname: Jeren surname: Samandari-Rad fullname: Samandari-Rad, Jeren email: jerensrad@soe.ucsc.edu organization: Electr. & Comput. Eng. Depts., Univ. of California at Santa Cruz, Santa Cruz, CA, USA – sequence: 2 givenname: Richard surname: Hughey fullname: Hughey, Richard organization: Comput. Eng. Dept., Univ. of California at Santa Cruz, Santa Cruz, CA, USA |
BookMark | eNqFUU1rGzEQFSWFpm5-QS4LPa-jj9WudDTGbQIJDbVb6EmM5JEjY0updkNwfn3lbAihl8xlhpl58_HeZ3ISU0RCzhmdMkb1xWw-XyyXU05ZO-WSM6HkB3LKWatrIUV78ib-RM76fkuLqZKS3Sn5c5seMV8sIubNoboJMezDEwwhxWqF7i6Gvw_YVz7l6jfkADbswnCoZ4-QsboMm7v6FnOp7iE6rFhbx33Vrurlz9nNF_LRw67Hsxc_Ib--LVbzy_r6x_er-ey6dg1VQy1txwWAAt9wr7xXSmjaKLl2LciOIwNrtfUWJFippAMp0XMvrNcaO0rFhFyNc9cJtuY-hz3kg0kQzHMi5Y2BPAS3Q0OpblknRKEKmrUUiq7ButYBgrKqEDQhX8dZ9zkdHx_MNj3kWM43vJFSN0qU-yZEjF0up77P6F-3MmqOkphREnOUxLxIUlD6P5QLwzPTQ4awewd7PmIDIr5u6wpTTDbiH76Xmqo |
CODEN | IAECCG |
CitedBy_id | crossref_primary_10_1109_ACCESS_2021_3111913 crossref_primary_10_1016_j_micpro_2023_104914 crossref_primary_10_3390_mi13081332 crossref_primary_10_1109_ACCESS_2020_3030099 crossref_primary_10_1016_j_microrel_2018_07_134 crossref_primary_10_1007_s00542_024_05662_7 crossref_primary_10_3390_s23115095 crossref_primary_10_1007_s10836_021_05944_2 |
Cites_doi | 10.1016/j.microrel.2005.02.001 10.1109/4.982424 10.1109/T-ED.1969.16754 10.1109/4.509850 10.1109/9780470545058 10.1109/ISQED.2012.6187541 10.1145/513918.513941 10.1109/ISEMC.2012.6351788 10.1109/TCAD.2005.852295 10.1109/JSSC.1978.1051122 10.1109/TDMR.2012.2218605 10.1109/TMTT.2010.2095876 10.1109/TPEL.2011.2178433 10.1109/HPCA.2014.6835953 10.1145/2429384.2429478 10.1145/1391469.1391498 10.1109/JSSC.2007.908005 10.1109/TCAD.2005.857313 10.3390/jlpea2010069 10.1145/2593069.2596684 10.1145/2593069.2593196 10.1109/VLSID.2014.80 10.1109/16.506774 10.1109/TCPMT.2012.2214482 10.1016/j.micpro.2013.04.010 10.1002/j.1538-7305.1950.tb00463.x 10.1109/MICRO.2006.52 10.1109/VLSIC.2007.4342741 10.1145/2744769.2744849 10.1063/1.322842 10.1145/2593069.2593184 10.1109/ISIE.1999.798675 10.1109/ASPDAC.2012.6165064 10.1109/PRDC.2006.56 10.1109/DATE.2012.6176479 10.1109/ICCD.2007.4601885 10.1109/TED.2003.815862 10.1109/DATE.2011.5763191 10.1145/775832.775877 10.1109/TSM.2007.913186 10.1109/DATE.2009.5090700 10.1109/ICICDT.2015.7165886 10.1109/TCAD.2012.2223467 10.1109/TVLSI.2011.2168433 10.1049/cp:20060147 10.1109/16.278507 10.1109/ASPDAC.2013.6509584 10.1109/JSSC.2002.803949 10.1109/63.654955 10.1109/ICCAD.2002.1167535 10.1145/1283780.1283818 10.1109/MICRO.2004.24 10.1109/TVLSI.2010.2043694 10.1016/j.mejo.2014.12.003 10.1109/ACCESS.2014.2323233 10.1007/978-3-642-19542-6_87 10.1109/16.333844 10.1088/0034-4885/52/3/002 10.1007/978-3-662-04478-0_7 10.1109/DAC.1989.203510 10.1109/ICEAA.2011.6046480 10.1109/TC.2014.2329675 10.1109/ECTC.2012.6248906 10.1016/j.mejo.2011.10.008 10.1145/1176760.1176810 10.1016/j.microrel.2004.03.019 10.1109/S3S.2014.7028190 10.1063/1.1418034 10.1109/ISQED.2014.6783395 10.1147/rd.144.0395 10.1109/TADVP.2010.2090348 10.1098/rspa.2011.0708 10.1109/DAC.2003.1219020 |
ContentType | Journal Article |
Copyright | Copyright The Institute of Electrical and Electronics Engineers, Inc. (IEEE) 2016 |
Copyright_xml | – notice: Copyright The Institute of Electrical and Electronics Engineers, Inc. (IEEE) 2016 |
DBID | 97E ESBDL RIA RIE AAYXX CITATION 7SC 7SP 7SR 8BQ 8FD JG9 JQ2 L7M L~C L~D DOA |
DOI | 10.1109/ACCESS.2016.2521385 |
DatabaseName | IEEE All-Society Periodicals Package (ASPP) 2005–Present IEEE Xplore Open Access Journals IEEE All-Society Periodicals Package (ASPP) 1998–Present IEEE Electronic Library (IEL) - NZ CrossRef Computer and Information Systems Abstracts Electronics & Communications Abstracts Engineered Materials Abstracts METADEX Technology Research Database Materials Research Database ProQuest Computer Science Collection Advanced Technologies Database with Aerospace Computer and Information Systems Abstracts Academic Computer and Information Systems Abstracts Professional DOAJ - Directory of Open Access Journals |
DatabaseTitle | CrossRef Materials Research Database Engineered Materials Abstracts Technology Research Database Computer and Information Systems Abstracts – Academic Electronics & Communications Abstracts ProQuest Computer Science Collection Computer and Information Systems Abstracts Advanced Technologies Database with Aerospace METADEX Computer and Information Systems Abstracts Professional |
DatabaseTitleList | Materials Research Database |
Database_xml | – sequence: 1 dbid: DOA name: DOAJ Directory of Open Access Journals url: https://www.doaj.org/ sourceTypes: Open Website – sequence: 2 dbid: RIE name: IEEE/IET Electronic Library url: https://proxy.k.utb.cz/login?url=https://ieeexplore.ieee.org/ sourceTypes: Publisher |
DeliveryMethod | fulltext_linktorsrc |
Discipline | Engineering |
EISSN | 2169-3536 |
EndPage | 613 |
ExternalDocumentID | oai_doaj_org_article_00961733201a4d5380dabc6caea8b835 10_1109_ACCESS_2016_2521385 7390154 |
Genre | orig-research |
GrantInformation_xml | – fundername: University of California, Santa Cruz funderid: 10.13039/100006358 |
GroupedDBID | 0R~ 4.4 5VS 6IK 97E AAJGR ABAZT ABVLG ACGFS ADBBV AGSQL ALMA_UNASSIGNED_HOLDINGS BCNDV BEFXN BFFAM BGNUA BKEBE BPEOZ EBS EJD ESBDL GROUPED_DOAJ IPLJI JAVBF KQ8 M43 M~E O9- OCL OK1 RIA RIE RNS AAYXX CITATION RIG 7SC 7SP 7SR 8BQ 8FD JG9 JQ2 L7M L~C L~D |
ID | FETCH-LOGICAL-c408t-5b723aa8af42f8ff88390485dc6a572e1abb9bfba5ab585ca55ef2f3bf99e7003 |
IEDL.DBID | DOA |
ISSN | 2169-3536 |
IngestDate | Wed Aug 27 01:31:53 EDT 2025 Mon Jun 30 05:23:30 EDT 2025 Tue Jul 01 04:10:41 EDT 2025 Thu Apr 24 23:03:45 EDT 2025 Tue Aug 26 16:43:02 EDT 2025 |
IsDoiOpenAccess | true |
IsOpenAccess | true |
IsPeerReviewed | true |
IsScholarly | true |
Keywords | IR drop multi-threshold CMOS Temperature VLSI high speed type of variations reliability static random access memory leakage current 16-nm electromigration variability NBTI 6T-SRAM energy-delay-product memory errors process variations energy efficiency yield optimum architecture low power aging RAM |
Language | English |
License | https://ieeexplore.ieee.org/Xplorehelp/downloads/license-information/USG.html |
LinkModel | DirectLink |
MergedId | FETCHMERGED-LOGICAL-c408t-5b723aa8af42f8ff88390485dc6a572e1abb9bfba5ab585ca55ef2f3bf99e7003 |
Notes | ObjectType-Article-1 SourceType-Scholarly Journals-1 ObjectType-Feature-2 content type line 14 |
OpenAccessLink | https://doaj.org/article/00961733201a4d5380dabc6caea8b835 |
PQID | 2455948388 |
PQPubID | 4845423 |
PageCount | 20 |
ParticipantIDs | crossref_primary_10_1109_ACCESS_2016_2521385 ieee_primary_7390154 crossref_citationtrail_10_1109_ACCESS_2016_2521385 doaj_primary_oai_doaj_org_article_00961733201a4d5380dabc6caea8b835 proquest_journals_2455948388 |
ProviderPackageCode | CITATION AAYXX |
PublicationCentury | 2000 |
PublicationDate | 20160000 2016-00-00 20160101 2016-01-01 |
PublicationDateYYYYMMDD | 2016-01-01 |
PublicationDate_xml | – year: 2016 text: 20160000 |
PublicationDecade | 2010 |
PublicationPlace | Piscataway |
PublicationPlace_xml | – name: Piscataway |
PublicationTitle | IEEE access |
PublicationTitleAbbrev | Access |
PublicationYear | 2016 |
Publisher | IEEE The Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
Publisher_xml | – name: IEEE – name: The Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
References | ref57 ref13 ref56 ref12 ref59 ref15 ref58 ref14 ref53 ref52 ref11 ref54 sofia (ref90) 1997; 3 chau (ref39) 2003 ref17 ref16 sekar (ref87) 0 ref19 ref18 rabaey (ref3) 2008 mofrad (ref73) 2011 calhoun (ref76) 2006 ref93 rabaey (ref37) 2008 ref92 ref51 ref94 ref91 lin (ref80) 2004 ref89 ref45 ref47 rabaey (ref36) 2008 ref86 ref42 ref88 ref43 kumar (ref7) 2011 song (ref21) 2014 (ref10) 2013 rabaey (ref41) 2008 ref49 ref8 ref9 ref4 (ref85) 2014 ref6 ref5 ref82 ref81 ref84 ref79 ref35 ref78 ref34 ref75 ref31 ref74 ref30 ref77 ref33 ref32 ref2 ref1 ref38 ref71 ref70 ref72 samandari-rad (ref40) 2012 ref68 ref24 blaauw (ref55) 2005 ref67 ref23 ref26 ref69 ref25 ref64 ref63 ref66 ref22 rabaey (ref46) 2008 ref65 guan (ref50) 2013 agarwal (ref48) 2002 ref28 ref27 priya (ref44) 2012; 74 ref29 chang (ref20) 2013 papoulis (ref83) 2002 ref60 ref62 ref61 |
References_xml | – ident: ref59 doi: 10.1016/j.microrel.2005.02.001 – ident: ref8 doi: 10.1109/4.982424 – ident: ref65 doi: 10.1109/T-ED.1969.16754 – ident: ref23 doi: 10.1109/4.509850 – year: 2013 ident: ref10 publication-title: The International Technology Roadmap for Semiconductors (ITRS) – ident: ref47 doi: 10.1109/9780470545058 – ident: ref1 doi: 10.1109/ISQED.2012.6187541 – ident: ref51 doi: 10.1145/513918.513941 – ident: ref54 doi: 10.1109/ISEMC.2012.6351788 – ident: ref24 doi: 10.1109/TCAD.2005.852295 – ident: ref78 doi: 10.1109/JSSC.1978.1051122 – start-page: 115 year: 2008 ident: ref36 article-title: The device publication-title: Digital Integrated Circuits – ident: ref26 doi: 10.1109/TDMR.2012.2218605 – ident: ref58 doi: 10.1109/TMTT.2010.2095876 – ident: ref89 doi: 10.1109/TPEL.2011.2178433 – ident: ref84 doi: 10.1109/HPCA.2014.6835953 – ident: ref13 doi: 10.1145/2429384.2429478 – ident: ref15 doi: 10.1145/1391469.1391498 – ident: ref75 doi: 10.1109/JSSC.2007.908005 – ident: ref16 doi: 10.1109/TCAD.2005.857313 – start-page: 235 year: 2008 ident: ref41 article-title: Designing combinational logic gates in CMOS publication-title: Digital Integrated Circuits – year: 2014 ident: ref85 publication-title: ASU Predictive Technology Model (PTM) Developed by the Nanoscale Integration and Modeling (NIMO) Group at Arizona State University – ident: ref45 doi: 10.3390/jlpea2010069 – start-page: 623 year: 2008 ident: ref3 article-title: Designing memory and array structures publication-title: Digital Integrated Circuits – ident: ref28 doi: 10.1145/2593069.2596684 – ident: ref68 doi: 10.1145/2593069.2593196 – ident: ref88 doi: 10.1109/VLSID.2014.80 – ident: ref6 doi: 10.1109/16.506774 – ident: ref18 doi: 10.1109/TCPMT.2012.2214482 – ident: ref19 doi: 10.1016/j.micpro.2013.04.010 – ident: ref81 doi: 10.1002/j.1538-7305.1950.tb00463.x – ident: ref79 doi: 10.1109/MICRO.2006.52 – ident: ref74 doi: 10.1109/VLSIC.2007.4342741 – ident: ref42 doi: 10.1145/2744769.2744849 – start-page: 2592 year: 2006 ident: ref76 article-title: A 256 kb sub-threshold SRAM in 65 nm CMOS publication-title: Proc ISSCC – ident: ref66 doi: 10.1063/1.322842 – ident: ref27 doi: 10.1145/2593069.2593184 – ident: ref92 doi: 10.1109/ISIE.1999.798675 – year: 0 ident: ref87 article-title: Memory technologies: New frontiers – ident: ref35 doi: 10.1109/ASPDAC.2012.6165064 – ident: ref34 doi: 10.1109/PRDC.2006.56 – ident: ref71 doi: 10.1109/DATE.2012.6176479 – ident: ref61 doi: 10.1109/ICCD.2007.4601885 – ident: ref4 doi: 10.1109/TED.2003.815862 – ident: ref70 doi: 10.1109/DATE.2011.5763191 – ident: ref38 doi: 10.1145/775832.775877 – ident: ref25 doi: 10.1109/TSM.2007.913186 – ident: ref14 doi: 10.1109/DATE.2009.5090700 – ident: ref86 doi: 10.1109/ICICDT.2015.7165886 – ident: ref32 doi: 10.1109/TCAD.2012.2223467 – ident: ref49 doi: 10.1109/TVLSI.2011.2168433 – ident: ref91 doi: 10.1049/cp:20060147 – ident: ref64 doi: 10.1109/16.278507 – volume: 3 start-page: 22 year: 1997 ident: ref90 article-title: Electrical temperature measurement using semiconductors publication-title: Electron Cooling – ident: ref11 doi: 10.1109/ASPDAC.2013.6509584 – ident: ref29 doi: 10.1109/JSSC.2002.803949 – year: 2005 ident: ref55 article-title: Design and analysis of power supply networks publication-title: Electronic Design Automation for Integrated Circuits Handbook – ident: ref93 doi: 10.1109/63.654955 – ident: ref52 doi: 10.1109/ICCAD.2002.1167535 – start-page: 99 year: 2004 ident: ref80 article-title: Important linear block codes publication-title: Error Control Coding – start-page: 16 year: 2002 ident: ref48 article-title: Path-based statistical timing analysis considering inter-and intra-die correlations publication-title: Proc ACM/IEEE TAU – ident: ref77 doi: 10.1145/1283780.1283818 – ident: ref30 doi: 10.1109/MICRO.2004.24 – ident: ref94 doi: 10.1109/TVLSI.2010.2043694 – ident: ref22 doi: 10.1016/j.mejo.2014.12.003 – ident: ref2 doi: 10.1109/ACCESS.2014.2323233 – start-page: 232 year: 2014 ident: ref21 article-title: 13.2 A 14 nm FinFET 128 Mb 6T SRAM with VMIN-enhancement techniques for low-power applications publication-title: IEEE Int Solid-State Circuits Conf Dig Tech Papers (ISSCC) – start-page: 458 year: 2011 ident: ref7 article-title: Design of a low power high speed ALU in 45 nm using GDI technique and its performance comparison publication-title: Proc 2nd Int Conf Commun Comput Inf Sci doi: 10.1007/978-3-642-19542-6_87 – ident: ref5 doi: 10.1109/16.333844 – start-page: 286 year: 2013 ident: ref50 article-title: SRAM bit-line electromigration mechanism and its prevention scheme publication-title: Proc 14th ISQED – ident: ref62 doi: 10.1088/0034-4885/52/3/002 – start-page: 124 year: 2003 ident: ref39 article-title: Gate dielectric scaling for high-performance CMOS: From SiO2 to high- $\kappa $ publication-title: Proc IWGI – ident: ref72 doi: 10.1007/978-3-662-04478-0_7 – ident: ref63 doi: 10.1109/DAC.1989.203510 – ident: ref57 doi: 10.1109/ICEAA.2011.6046480 – ident: ref12 doi: 10.1109/TC.2014.2329675 – start-page: 559 year: 2008 ident: ref46 article-title: Designing arithmetic building blocks publication-title: Digital Integrated Circuits – ident: ref17 doi: 10.1109/ECTC.2012.6248906 – start-page: 179 year: 2008 ident: ref37 article-title: The CMOS inverter publication-title: Digital Integrated Circuits – volume: 74 start-page: 96 year: 2012 ident: ref44 article-title: A novel leakage power reduction technique for CMOS VLSI circuits publication-title: Eur J Sci Res – ident: ref43 doi: 10.1016/j.mejo.2011.10.008 – ident: ref69 doi: 10.1145/1176760.1176810 – ident: ref60 doi: 10.1016/j.microrel.2004.03.019 – year: 2002 ident: ref83 publication-title: Probability random variables and stochastic processes – start-page: 95 year: 2011 ident: ref73 article-title: FFT-cache: A flexible fault-tolerant cache architecture for ultra low voltage operation publication-title: Proc Int Conf Compilers Architecture and Synthesis Embedded Systems (CASES) – ident: ref31 doi: 10.1109/S3S.2014.7028190 – ident: ref67 doi: 10.1063/1.1418034 – ident: ref33 doi: 10.1109/ISQED.2014.6783395 – ident: ref82 doi: 10.1147/rd.144.0395 – ident: ref56 doi: 10.1109/TADVP.2010.2090348 – ident: ref53 doi: 10.1098/rspa.2011.0708 – ident: ref9 doi: 10.1109/DAC.2003.1219020 – year: 2012 ident: ref40 article-title: Design and analysis of robust variability-aware SRAM to predict optimal access-time to achieve yield enhancement in future nano-scaled CMOS – start-page: 316 year: 2013 ident: ref20 article-title: A 20 nm 112 Mb SRAM in high- $\kappa $ metal-gate with assist circuitry for low-leakage and low-VMIN applications publication-title: IEEE Int Solid-State Circuits Conf (ISSCC) Dig Tech Papers |
SSID | ssj0000816957 |
Score | 2.1077135 |
Snippet | Power and energy minimization is a critical concern for the battery life, reliability, and yield of many minimum-sized SRAMs. In this paper, we extend our... |
SourceID | doaj proquest crossref ieee |
SourceType | Open Website Aggregation Database Enrichment Source Index Database Publisher |
StartPage | 594 |
SubjectTerms | 16-nm 6T-SRAM aging Delay Electromigration Empirical analysis Energy Energy consumption Energy efficiency Energy management energy-delay-product IR drop leakage current Leakage currents memory errors Memory management NBTI Optimization optimum architecture power Power system reliability reliability SRAM Temperature Temperature measurement type of variations variability yield |
SummonAdditionalLinks | – databaseName: IEEE Electronic Library (IEL) - NZ dbid: RIE link: http://utb.summon.serialssolutions.com/2.0.0/link/0/eLvHCXMwjV1baxQxFD60fdIHb1VcrZIHH5u95DLJPK5LSxFWim6lPoWTGxTbqbS7iP56k0x2LCri2zAkIcOX5JyTOef7AN5Iy7xwHKlmPpNqB0HR6UhDsm58Zq31Ktc7L983J2fi3bk834HDoRYmhFCSz8I4P5Z_-f7abfJV2USVAF3swm4K3PpareE-JQtItFJVYqHZtJ3MF4v0DTl7qxmzZKV41ku-Y3wKR38VVfnjJC7m5fghLLcT67NKvow3azt2P37jbPzfmT-CB9XPJPN-YTyGndA9gft32Af34fNpVkibHJXqP7K86C6ualEmWW2ZXW9JcmrJpxRQ93ze3-n8G94EktND6OmvogMya2h3RZoV_fhhvnwKZ8dHq8UJrUoL1ImpXlNpFeOIGqNgUceok9uUtrb0rkGpWJihta2NFiXaFF84lDJEFrmNbRtUOhiewV533YXnQJhSkfuIRdZYtl5bLaLD1qlGOS_jCNgWAuMqDXlWw7g0JRyZtqbHzWTcTMVtBIdDp689C8e_m7_N2A5NM4V2eZEwMXVHmiJ2ozhPHVH4dO5PPVrXOAyY5szTIPsZx2GQCuEIDrYrxdTtfmuYkJn2hmv94u-9XsK9PMH-7uYA9tY3m_AqeTNr-7os459wMfFO priority: 102 providerName: IEEE |
Title | Power/Energy Minimization Techniques for Variability-Aware High-Performance 16-nm 6T-SRAM |
URI | https://ieeexplore.ieee.org/document/7390154 https://www.proquest.com/docview/2455948388 https://doaj.org/article/00961733201a4d5380dabc6caea8b835 |
Volume | 4 |
hasFullText | 1 |
inHoldings | 1 |
isFullTextHit | |
isPrint | |
link | http://utb.summon.serialssolutions.com/2.0.0/link/0/eLvHCXMwrV1LSyQxEA7iSQ_i-sDxRQ4ejTOdRyd9nB0UEUZER9FTqLxAWFvREdl_v0k6Mw4I7sVrk053KlWpqlD1fQgdCUMdtwyIoi6BantOwKpAfPRurDLGOJn6nceX9fktv7gX9wtUX6kmrIMH7gTXz5wkkrHoqIC7aJ4DB8bWFjwoE8OHdPpGn7eQTOUzWFV1I2SBGaoGTX84GsUVpVqu-oRGn8USe_KCK8qI_YVi5cu5nJ3N2TpaK1EiHnZ_9wst-XYDrS5gB26ih6vEb9Y_zb17ePzYPj6Vlko8meGyvuEYkuK7mA53aNx_yfADXj1OxR3k6rNlAFc1aZ9wPSE318PxFro9O52MzknhSSCWD9SUCCMpA1AQOA0qBBWDnmiYwtkahKS-AmMaEwwIMDE7sCCEDzQwE5rGy2jW22i5fW79DsJUysBcgExKLBoXRcyDhcbKWlonQg_Rmci0LSDiicvij87JxKDRnZx1krMucu6h4_lLLx2GxvfDf6e9mA9NANj5QVQLXdRC_08temgz7eR8EpnvdngP7c92VhdjfdOUiwRaw5Ta_YlP76GVtJzunmYfLU9f3_1BjFym5jAr6WFuMvwHjTvoZw |
linkProvider | Directory of Open Access Journals |
linkToHtml | http://utb.summon.serialssolutions.com/2.0.0/link/0/eLvHCXMwjV1Lb9QwEB6VcgAOFCioCwVy4Fjvw4_YPi6rVgs0VQVbVE6Wn1JFm6J2Vwh-PbbjTStAiFsU2dZEM_bMODPfB_CGGeyoJRoJ7BKotqdIWxGQj96NTIwxjqd-5-aonp_Q96fsdAP2-l4Y730uPvPD9Jj_5btLu0pXZSOeE3R6B-5Gv89w163V36gkCgnJeIEWmozlaDqbxa9I9Vv1EEc_RRJj8i33k1H6C63KH2dxdjAHW9CsRevqSr4OV0sztD9_Q238X9kfwcMSaVbTzjQew4Zvn8CDW_iD2_DlOHGkjfZz_1_VnLVnF6Uts1qssV2vqxjWVp9jSt0hev9A0-_6ylepQAQd37QdVJMatRdVvUCfPk6bp3BysL-YzVHhWkCWjsUSMcMx0VroQHEQIYgYOMXNzZytNePYT7Qx0gSjmTYxw7CaMR9wICZI6Xk8Gp7BZnvZ-h2oMOeBuKAzsTGTThhBg9XS8ppbx8IA8FoFyhYg8sSHca5yQjKWqtObSnpTRW8D2OsnfetwOP49_G3SbT80gWjnF1EnquxJleluOCFxoqYunvxjp42trfY6ykziIttJj_0iRYUD2F1biiob_lrhaJCSCiLE87_Peg335ovmUB2-O_rwAu4nYbubnF3YXF6t_MsY2yzNq2zSvwAt4fSY |
openUrl | ctx_ver=Z39.88-2004&ctx_enc=info%3Aofi%2Fenc%3AUTF-8&rfr_id=info%3Asid%2Fsummon.serialssolutions.com&rft_val_fmt=info%3Aofi%2Ffmt%3Akev%3Amtx%3Ajournal&rft.genre=article&rft.atitle=Power%2FEnergy+Minimization+Techniques+for+Variability-Aware+High-Performance+16-nm+6T-SRAM&rft.jtitle=IEEE+access&rft.au=Samandari-Rad%2C+Jeren&rft.au=Hughey%2C+Richard&rft.date=2016&rft.issn=2169-3536&rft.eissn=2169-3536&rft.volume=4&rft.spage=594&rft.epage=613&rft_id=info:doi/10.1109%2FACCESS.2016.2521385&rft.externalDBID=n%2Fa&rft.externalDocID=10_1109_ACCESS_2016_2521385 |
thumbnail_l | http://covers-cdn.summon.serialssolutions.com/index.aspx?isbn=/lc.gif&issn=2169-3536&client=summon |
thumbnail_m | http://covers-cdn.summon.serialssolutions.com/index.aspx?isbn=/mc.gif&issn=2169-3536&client=summon |
thumbnail_s | http://covers-cdn.summon.serialssolutions.com/index.aspx?isbn=/sc.gif&issn=2169-3536&client=summon |