Power/Energy Minimization Techniques for Variability-Aware High-Performance 16-nm 6T-SRAM

Power and energy minimization is a critical concern for the battery life, reliability, and yield of many minimum-sized SRAMs. In this paper, we extend our previously proposed hybrid analytical-empirical model for minimizing and predicting the delay and delay variability of SRAMs, VAR-TX, to a new en...

Full description

Saved in:
Bibliographic Details
Published inIEEE access Vol. 4; pp. 594 - 613
Main Authors Samandari-Rad, Jeren, Hughey, Richard
Format Journal Article
LanguageEnglish
Published Piscataway IEEE 2016
The Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subjects
Online AccessGet full text

Cover

Loading…
Abstract Power and energy minimization is a critical concern for the battery life, reliability, and yield of many minimum-sized SRAMs. In this paper, we extend our previously proposed hybrid analytical-empirical model for minimizing and predicting the delay and delay variability of SRAMs, VAR-TX, to a new enhanced version, exVAR-TX, to minimize and predict the power/energy and power/energy variability of a 16-nm 6T-SRAM under the influence of the three major types of variations: Fabrication, Operation, and Implementation. Using exVAR-TX for architectural optimization [exhaustively computing and comparing the range of feasible architectures subject to interdie (die-to-die/D2D) and intradie (within-die/WID) process and operation variations (PVT), electromigration (EM), negative bias temperature instability (NBTI), and soft-errors, among others] on top of deploying the most recent state of the art effective mitigation techniques we show that energy and energy-delay-product (EDP) of 64KB 16-nm 6T-SRAM could be reduced by ~12.5X and ~33%, respectively, as compared to the existing conventional designs.
AbstractList Power and energy minimization is a critical concern for the battery life, reliability, and yield of many minimum-sized SRAMs. In this paper, we extend our previously proposed hybrid analytical-empirical model for minimizing and predicting the delay and delay variability of SRAMs, VAR-TX, to a new enhanced version, exVAR-TX, to minimize and predict the power/energy and power/energy variability of a 16-nm 6T-SRAM under the influence of the three major types of variations: Fabrication, Operation, and Implementation. Using exVAR-TX for architectural optimization [exhaustively computing and comparing the range of feasible architectures subject to interdie (die-to-die/D2D) and intradie (within-die/WID) process and operation variations (PVT), electromigration (EM), negative bias temperature instability (NBTI), and soft-errors, among others] on top of deploying the most recent state of the art effective mitigation techniques we show that energy and energy-delay-product (EDP) of 64KB 16-nm 6T-SRAM could be reduced by ~12.5X and ~33%, respectively, as compared to the existing conventional designs.
Author Samandari-Rad, Jeren
Hughey, Richard
Author_xml – sequence: 1
  givenname: Jeren
  surname: Samandari-Rad
  fullname: Samandari-Rad, Jeren
  email: jerensrad@soe.ucsc.edu
  organization: Electr. & Comput. Eng. Depts., Univ. of California at Santa Cruz, Santa Cruz, CA, USA
– sequence: 2
  givenname: Richard
  surname: Hughey
  fullname: Hughey, Richard
  organization: Comput. Eng. Dept., Univ. of California at Santa Cruz, Santa Cruz, CA, USA
BookMark eNqFUU1rGzEQFSWFpm5-QS4LPa-jj9WudDTGbQIJDbVb6EmM5JEjY0updkNwfn3lbAihl8xlhpl58_HeZ3ISU0RCzhmdMkb1xWw-XyyXU05ZO-WSM6HkB3LKWatrIUV78ib-RM76fkuLqZKS3Sn5c5seMV8sIubNoboJMezDEwwhxWqF7i6Gvw_YVz7l6jfkADbswnCoZ4-QsboMm7v6FnOp7iE6rFhbx33Vrurlz9nNF_LRw67Hsxc_Ib--LVbzy_r6x_er-ey6dg1VQy1txwWAAt9wr7xXSmjaKLl2LciOIwNrtfUWJFippAMp0XMvrNcaO0rFhFyNc9cJtuY-hz3kg0kQzHMi5Y2BPAS3Q0OpblknRKEKmrUUiq7ButYBgrKqEDQhX8dZ9zkdHx_MNj3kWM43vJFSN0qU-yZEjF0up77P6F-3MmqOkphREnOUxLxIUlD6P5QLwzPTQ4awewd7PmIDIr5u6wpTTDbiH76Xmqo
CODEN IAECCG
CitedBy_id crossref_primary_10_1109_ACCESS_2021_3111913
crossref_primary_10_1016_j_micpro_2023_104914
crossref_primary_10_3390_mi13081332
crossref_primary_10_1109_ACCESS_2020_3030099
crossref_primary_10_1016_j_microrel_2018_07_134
crossref_primary_10_1007_s00542_024_05662_7
crossref_primary_10_3390_s23115095
crossref_primary_10_1007_s10836_021_05944_2
Cites_doi 10.1016/j.microrel.2005.02.001
10.1109/4.982424
10.1109/T-ED.1969.16754
10.1109/4.509850
10.1109/9780470545058
10.1109/ISQED.2012.6187541
10.1145/513918.513941
10.1109/ISEMC.2012.6351788
10.1109/TCAD.2005.852295
10.1109/JSSC.1978.1051122
10.1109/TDMR.2012.2218605
10.1109/TMTT.2010.2095876
10.1109/TPEL.2011.2178433
10.1109/HPCA.2014.6835953
10.1145/2429384.2429478
10.1145/1391469.1391498
10.1109/JSSC.2007.908005
10.1109/TCAD.2005.857313
10.3390/jlpea2010069
10.1145/2593069.2596684
10.1145/2593069.2593196
10.1109/VLSID.2014.80
10.1109/16.506774
10.1109/TCPMT.2012.2214482
10.1016/j.micpro.2013.04.010
10.1002/j.1538-7305.1950.tb00463.x
10.1109/MICRO.2006.52
10.1109/VLSIC.2007.4342741
10.1145/2744769.2744849
10.1063/1.322842
10.1145/2593069.2593184
10.1109/ISIE.1999.798675
10.1109/ASPDAC.2012.6165064
10.1109/PRDC.2006.56
10.1109/DATE.2012.6176479
10.1109/ICCD.2007.4601885
10.1109/TED.2003.815862
10.1109/DATE.2011.5763191
10.1145/775832.775877
10.1109/TSM.2007.913186
10.1109/DATE.2009.5090700
10.1109/ICICDT.2015.7165886
10.1109/TCAD.2012.2223467
10.1109/TVLSI.2011.2168433
10.1049/cp:20060147
10.1109/16.278507
10.1109/ASPDAC.2013.6509584
10.1109/JSSC.2002.803949
10.1109/63.654955
10.1109/ICCAD.2002.1167535
10.1145/1283780.1283818
10.1109/MICRO.2004.24
10.1109/TVLSI.2010.2043694
10.1016/j.mejo.2014.12.003
10.1109/ACCESS.2014.2323233
10.1007/978-3-642-19542-6_87
10.1109/16.333844
10.1088/0034-4885/52/3/002
10.1007/978-3-662-04478-0_7
10.1109/DAC.1989.203510
10.1109/ICEAA.2011.6046480
10.1109/TC.2014.2329675
10.1109/ECTC.2012.6248906
10.1016/j.mejo.2011.10.008
10.1145/1176760.1176810
10.1016/j.microrel.2004.03.019
10.1109/S3S.2014.7028190
10.1063/1.1418034
10.1109/ISQED.2014.6783395
10.1147/rd.144.0395
10.1109/TADVP.2010.2090348
10.1098/rspa.2011.0708
10.1109/DAC.2003.1219020
ContentType Journal Article
Copyright Copyright The Institute of Electrical and Electronics Engineers, Inc. (IEEE) 2016
Copyright_xml – notice: Copyright The Institute of Electrical and Electronics Engineers, Inc. (IEEE) 2016
DBID 97E
ESBDL
RIA
RIE
AAYXX
CITATION
7SC
7SP
7SR
8BQ
8FD
JG9
JQ2
L7M
L~C
L~D
DOA
DOI 10.1109/ACCESS.2016.2521385
DatabaseName IEEE All-Society Periodicals Package (ASPP) 2005–Present
IEEE Xplore Open Access Journals
IEEE All-Society Periodicals Package (ASPP) 1998–Present
IEEE Electronic Library (IEL) - NZ
CrossRef
Computer and Information Systems Abstracts
Electronics & Communications Abstracts
Engineered Materials Abstracts
METADEX
Technology Research Database
Materials Research Database
ProQuest Computer Science Collection
Advanced Technologies Database with Aerospace
Computer and Information Systems Abstracts – Academic
Computer and Information Systems Abstracts Professional
DOAJ - Directory of Open Access Journals
DatabaseTitle CrossRef
Materials Research Database
Engineered Materials Abstracts
Technology Research Database
Computer and Information Systems Abstracts – Academic
Electronics & Communications Abstracts
ProQuest Computer Science Collection
Computer and Information Systems Abstracts
Advanced Technologies Database with Aerospace
METADEX
Computer and Information Systems Abstracts Professional
DatabaseTitleList
Materials Research Database

Database_xml – sequence: 1
  dbid: DOA
  name: DOAJ Directory of Open Access Journals
  url: https://www.doaj.org/
  sourceTypes: Open Website
– sequence: 2
  dbid: RIE
  name: IEEE/IET Electronic Library
  url: https://proxy.k.utb.cz/login?url=https://ieeexplore.ieee.org/
  sourceTypes: Publisher
DeliveryMethod fulltext_linktorsrc
Discipline Engineering
EISSN 2169-3536
EndPage 613
ExternalDocumentID oai_doaj_org_article_00961733201a4d5380dabc6caea8b835
10_1109_ACCESS_2016_2521385
7390154
Genre orig-research
GrantInformation_xml – fundername: University of California, Santa Cruz
  funderid: 10.13039/100006358
GroupedDBID 0R~
4.4
5VS
6IK
97E
AAJGR
ABAZT
ABVLG
ACGFS
ADBBV
AGSQL
ALMA_UNASSIGNED_HOLDINGS
BCNDV
BEFXN
BFFAM
BGNUA
BKEBE
BPEOZ
EBS
EJD
ESBDL
GROUPED_DOAJ
IPLJI
JAVBF
KQ8
M43
M~E
O9-
OCL
OK1
RIA
RIE
RNS
AAYXX
CITATION
RIG
7SC
7SP
7SR
8BQ
8FD
JG9
JQ2
L7M
L~C
L~D
ID FETCH-LOGICAL-c408t-5b723aa8af42f8ff88390485dc6a572e1abb9bfba5ab585ca55ef2f3bf99e7003
IEDL.DBID DOA
ISSN 2169-3536
IngestDate Wed Aug 27 01:31:53 EDT 2025
Mon Jun 30 05:23:30 EDT 2025
Tue Jul 01 04:10:41 EDT 2025
Thu Apr 24 23:03:45 EDT 2025
Tue Aug 26 16:43:02 EDT 2025
IsDoiOpenAccess true
IsOpenAccess true
IsPeerReviewed true
IsScholarly true
Keywords IR drop
multi-threshold CMOS
Temperature
VLSI
high speed
type of variations
reliability
static random access memory
leakage current
16-nm
electromigration
variability
NBTI
6T-SRAM
energy-delay-product
memory errors
process variations
energy efficiency
yield
optimum architecture
low power
aging
RAM
Language English
License https://ieeexplore.ieee.org/Xplorehelp/downloads/license-information/USG.html
LinkModel DirectLink
MergedId FETCHMERGED-LOGICAL-c408t-5b723aa8af42f8ff88390485dc6a572e1abb9bfba5ab585ca55ef2f3bf99e7003
Notes ObjectType-Article-1
SourceType-Scholarly Journals-1
ObjectType-Feature-2
content type line 14
OpenAccessLink https://doaj.org/article/00961733201a4d5380dabc6caea8b835
PQID 2455948388
PQPubID 4845423
PageCount 20
ParticipantIDs crossref_primary_10_1109_ACCESS_2016_2521385
ieee_primary_7390154
crossref_citationtrail_10_1109_ACCESS_2016_2521385
doaj_primary_oai_doaj_org_article_00961733201a4d5380dabc6caea8b835
proquest_journals_2455948388
ProviderPackageCode CITATION
AAYXX
PublicationCentury 2000
PublicationDate 20160000
2016-00-00
20160101
2016-01-01
PublicationDateYYYYMMDD 2016-01-01
PublicationDate_xml – year: 2016
  text: 20160000
PublicationDecade 2010
PublicationPlace Piscataway
PublicationPlace_xml – name: Piscataway
PublicationTitle IEEE access
PublicationTitleAbbrev Access
PublicationYear 2016
Publisher IEEE
The Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher_xml – name: IEEE
– name: The Institute of Electrical and Electronics Engineers, Inc. (IEEE)
References ref57
ref13
ref56
ref12
ref59
ref15
ref58
ref14
ref53
ref52
ref11
ref54
sofia (ref90) 1997; 3
chau (ref39) 2003
ref17
ref16
sekar (ref87) 0
ref19
ref18
rabaey (ref3) 2008
mofrad (ref73) 2011
calhoun (ref76) 2006
ref93
rabaey (ref37) 2008
ref92
ref51
ref94
ref91
lin (ref80) 2004
ref89
ref45
ref47
rabaey (ref36) 2008
ref86
ref42
ref88
ref43
kumar (ref7) 2011
song (ref21) 2014
(ref10) 2013
rabaey (ref41) 2008
ref49
ref8
ref9
ref4
(ref85) 2014
ref6
ref5
ref82
ref81
ref84
ref79
ref35
ref78
ref34
ref75
ref31
ref74
ref30
ref77
ref33
ref32
ref2
ref1
ref38
ref71
ref70
ref72
samandari-rad (ref40) 2012
ref68
ref24
blaauw (ref55) 2005
ref67
ref23
ref26
ref69
ref25
ref64
ref63
ref66
ref22
rabaey (ref46) 2008
ref65
guan (ref50) 2013
agarwal (ref48) 2002
ref28
ref27
priya (ref44) 2012; 74
ref29
chang (ref20) 2013
papoulis (ref83) 2002
ref60
ref62
ref61
References_xml – ident: ref59
  doi: 10.1016/j.microrel.2005.02.001
– ident: ref8
  doi: 10.1109/4.982424
– ident: ref65
  doi: 10.1109/T-ED.1969.16754
– ident: ref23
  doi: 10.1109/4.509850
– year: 2013
  ident: ref10
  publication-title: The International Technology Roadmap for Semiconductors (ITRS)
– ident: ref47
  doi: 10.1109/9780470545058
– ident: ref1
  doi: 10.1109/ISQED.2012.6187541
– ident: ref51
  doi: 10.1145/513918.513941
– ident: ref54
  doi: 10.1109/ISEMC.2012.6351788
– ident: ref24
  doi: 10.1109/TCAD.2005.852295
– ident: ref78
  doi: 10.1109/JSSC.1978.1051122
– start-page: 115
  year: 2008
  ident: ref36
  article-title: The device
  publication-title: Digital Integrated Circuits
– ident: ref26
  doi: 10.1109/TDMR.2012.2218605
– ident: ref58
  doi: 10.1109/TMTT.2010.2095876
– ident: ref89
  doi: 10.1109/TPEL.2011.2178433
– ident: ref84
  doi: 10.1109/HPCA.2014.6835953
– ident: ref13
  doi: 10.1145/2429384.2429478
– ident: ref15
  doi: 10.1145/1391469.1391498
– ident: ref75
  doi: 10.1109/JSSC.2007.908005
– ident: ref16
  doi: 10.1109/TCAD.2005.857313
– start-page: 235
  year: 2008
  ident: ref41
  article-title: Designing combinational logic gates in CMOS
  publication-title: Digital Integrated Circuits
– year: 2014
  ident: ref85
  publication-title: ASU Predictive Technology Model (PTM) Developed by the Nanoscale Integration and Modeling (NIMO) Group at Arizona State University
– ident: ref45
  doi: 10.3390/jlpea2010069
– start-page: 623
  year: 2008
  ident: ref3
  article-title: Designing memory and array structures
  publication-title: Digital Integrated Circuits
– ident: ref28
  doi: 10.1145/2593069.2596684
– ident: ref68
  doi: 10.1145/2593069.2593196
– ident: ref88
  doi: 10.1109/VLSID.2014.80
– ident: ref6
  doi: 10.1109/16.506774
– ident: ref18
  doi: 10.1109/TCPMT.2012.2214482
– ident: ref19
  doi: 10.1016/j.micpro.2013.04.010
– ident: ref81
  doi: 10.1002/j.1538-7305.1950.tb00463.x
– ident: ref79
  doi: 10.1109/MICRO.2006.52
– ident: ref74
  doi: 10.1109/VLSIC.2007.4342741
– ident: ref42
  doi: 10.1145/2744769.2744849
– start-page: 2592
  year: 2006
  ident: ref76
  article-title: A 256 kb sub-threshold SRAM in 65 nm CMOS
  publication-title: Proc ISSCC
– ident: ref66
  doi: 10.1063/1.322842
– ident: ref27
  doi: 10.1145/2593069.2593184
– ident: ref92
  doi: 10.1109/ISIE.1999.798675
– year: 0
  ident: ref87
  article-title: Memory technologies: New frontiers
– ident: ref35
  doi: 10.1109/ASPDAC.2012.6165064
– ident: ref34
  doi: 10.1109/PRDC.2006.56
– ident: ref71
  doi: 10.1109/DATE.2012.6176479
– ident: ref61
  doi: 10.1109/ICCD.2007.4601885
– ident: ref4
  doi: 10.1109/TED.2003.815862
– ident: ref70
  doi: 10.1109/DATE.2011.5763191
– ident: ref38
  doi: 10.1145/775832.775877
– ident: ref25
  doi: 10.1109/TSM.2007.913186
– ident: ref14
  doi: 10.1109/DATE.2009.5090700
– ident: ref86
  doi: 10.1109/ICICDT.2015.7165886
– ident: ref32
  doi: 10.1109/TCAD.2012.2223467
– ident: ref49
  doi: 10.1109/TVLSI.2011.2168433
– ident: ref91
  doi: 10.1049/cp:20060147
– ident: ref64
  doi: 10.1109/16.278507
– volume: 3
  start-page: 22
  year: 1997
  ident: ref90
  article-title: Electrical temperature measurement using semiconductors
  publication-title: Electron Cooling
– ident: ref11
  doi: 10.1109/ASPDAC.2013.6509584
– ident: ref29
  doi: 10.1109/JSSC.2002.803949
– year: 2005
  ident: ref55
  article-title: Design and analysis of power supply networks
  publication-title: Electronic Design Automation for Integrated Circuits Handbook
– ident: ref93
  doi: 10.1109/63.654955
– ident: ref52
  doi: 10.1109/ICCAD.2002.1167535
– start-page: 99
  year: 2004
  ident: ref80
  article-title: Important linear block codes
  publication-title: Error Control Coding
– start-page: 16
  year: 2002
  ident: ref48
  article-title: Path-based statistical timing analysis considering inter-and intra-die correlations
  publication-title: Proc ACM/IEEE TAU
– ident: ref77
  doi: 10.1145/1283780.1283818
– ident: ref30
  doi: 10.1109/MICRO.2004.24
– ident: ref94
  doi: 10.1109/TVLSI.2010.2043694
– ident: ref22
  doi: 10.1016/j.mejo.2014.12.003
– ident: ref2
  doi: 10.1109/ACCESS.2014.2323233
– start-page: 232
  year: 2014
  ident: ref21
  article-title: 13.2 A 14 nm FinFET 128 Mb 6T SRAM with VMIN-enhancement techniques for low-power applications
  publication-title: IEEE Int Solid-State Circuits Conf Dig Tech Papers (ISSCC)
– start-page: 458
  year: 2011
  ident: ref7
  article-title: Design of a low power high speed ALU in 45 nm using GDI technique and its performance comparison
  publication-title: Proc 2nd Int Conf Commun Comput Inf Sci
  doi: 10.1007/978-3-642-19542-6_87
– ident: ref5
  doi: 10.1109/16.333844
– start-page: 286
  year: 2013
  ident: ref50
  article-title: SRAM bit-line electromigration mechanism and its prevention scheme
  publication-title: Proc 14th ISQED
– ident: ref62
  doi: 10.1088/0034-4885/52/3/002
– start-page: 124
  year: 2003
  ident: ref39
  article-title: Gate dielectric scaling for high-performance CMOS: From SiO2 to high- $\kappa $
  publication-title: Proc IWGI
– ident: ref72
  doi: 10.1007/978-3-662-04478-0_7
– ident: ref63
  doi: 10.1109/DAC.1989.203510
– ident: ref57
  doi: 10.1109/ICEAA.2011.6046480
– ident: ref12
  doi: 10.1109/TC.2014.2329675
– start-page: 559
  year: 2008
  ident: ref46
  article-title: Designing arithmetic building blocks
  publication-title: Digital Integrated Circuits
– ident: ref17
  doi: 10.1109/ECTC.2012.6248906
– start-page: 179
  year: 2008
  ident: ref37
  article-title: The CMOS inverter
  publication-title: Digital Integrated Circuits
– volume: 74
  start-page: 96
  year: 2012
  ident: ref44
  article-title: A novel leakage power reduction technique for CMOS VLSI circuits
  publication-title: Eur J Sci Res
– ident: ref43
  doi: 10.1016/j.mejo.2011.10.008
– ident: ref69
  doi: 10.1145/1176760.1176810
– ident: ref60
  doi: 10.1016/j.microrel.2004.03.019
– year: 2002
  ident: ref83
  publication-title: Probability random variables and stochastic processes
– start-page: 95
  year: 2011
  ident: ref73
  article-title: FFT-cache: A flexible fault-tolerant cache architecture for ultra low voltage operation
  publication-title: Proc Int Conf Compilers Architecture and Synthesis Embedded Systems (CASES)
– ident: ref31
  doi: 10.1109/S3S.2014.7028190
– ident: ref67
  doi: 10.1063/1.1418034
– ident: ref33
  doi: 10.1109/ISQED.2014.6783395
– ident: ref82
  doi: 10.1147/rd.144.0395
– ident: ref56
  doi: 10.1109/TADVP.2010.2090348
– ident: ref53
  doi: 10.1098/rspa.2011.0708
– ident: ref9
  doi: 10.1109/DAC.2003.1219020
– year: 2012
  ident: ref40
  article-title: Design and analysis of robust variability-aware SRAM to predict optimal access-time to achieve yield enhancement in future nano-scaled CMOS
– start-page: 316
  year: 2013
  ident: ref20
  article-title: A 20 nm 112 Mb SRAM in high- $\kappa $ metal-gate with assist circuitry for low-leakage and low-VMIN applications
  publication-title: IEEE Int Solid-State Circuits Conf (ISSCC) Dig Tech Papers
SSID ssj0000816957
Score 2.1077135
Snippet Power and energy minimization is a critical concern for the battery life, reliability, and yield of many minimum-sized SRAMs. In this paper, we extend our...
SourceID doaj
proquest
crossref
ieee
SourceType Open Website
Aggregation Database
Enrichment Source
Index Database
Publisher
StartPage 594
SubjectTerms 16-nm
6T-SRAM
aging
Delay
Electromigration
Empirical analysis
Energy
Energy consumption
Energy efficiency
Energy management
energy-delay-product
IR drop
leakage current
Leakage currents
memory errors
Memory management
NBTI
Optimization
optimum architecture
power
Power system reliability
reliability
SRAM
Temperature
Temperature measurement
type of variations
variability
yield
SummonAdditionalLinks – databaseName: IEEE Electronic Library (IEL) - NZ
  dbid: RIE
  link: http://utb.summon.serialssolutions.com/2.0.0/link/0/eLvHCXMwjV1baxQxFD60fdIHb1VcrZIHH5u95DLJPK5LSxFWim6lPoWTGxTbqbS7iP56k0x2LCri2zAkIcOX5JyTOef7AN5Iy7xwHKlmPpNqB0HR6UhDsm58Zq31Ktc7L983J2fi3bk834HDoRYmhFCSz8I4P5Z_-f7abfJV2USVAF3swm4K3PpareE-JQtItFJVYqHZtJ3MF4v0DTl7qxmzZKV41ku-Y3wKR38VVfnjJC7m5fghLLcT67NKvow3azt2P37jbPzfmT-CB9XPJPN-YTyGndA9gft32Af34fNpVkibHJXqP7K86C6ualEmWW2ZXW9JcmrJpxRQ93ze3-n8G94EktND6OmvogMya2h3RZoV_fhhvnwKZ8dHq8UJrUoL1ImpXlNpFeOIGqNgUceok9uUtrb0rkGpWJihta2NFiXaFF84lDJEFrmNbRtUOhiewV533YXnQJhSkfuIRdZYtl5bLaLD1qlGOS_jCNgWAuMqDXlWw7g0JRyZtqbHzWTcTMVtBIdDp689C8e_m7_N2A5NM4V2eZEwMXVHmiJ2ozhPHVH4dO5PPVrXOAyY5szTIPsZx2GQCuEIDrYrxdTtfmuYkJn2hmv94u-9XsK9PMH-7uYA9tY3m_AqeTNr-7os459wMfFO
  priority: 102
  providerName: IEEE
Title Power/Energy Minimization Techniques for Variability-Aware High-Performance 16-nm 6T-SRAM
URI https://ieeexplore.ieee.org/document/7390154
https://www.proquest.com/docview/2455948388
https://doaj.org/article/00961733201a4d5380dabc6caea8b835
Volume 4
hasFullText 1
inHoldings 1
isFullTextHit
isPrint
link http://utb.summon.serialssolutions.com/2.0.0/link/0/eLvHCXMwrV1LSyQxEA7iSQ_i-sDxRQ4ejTOdRyd9nB0UEUZER9FTqLxAWFvREdl_v0k6Mw4I7sVrk053KlWpqlD1fQgdCUMdtwyIoi6BantOwKpAfPRurDLGOJn6nceX9fktv7gX9wtUX6kmrIMH7gTXz5wkkrHoqIC7aJ4DB8bWFjwoE8OHdPpGn7eQTOUzWFV1I2SBGaoGTX84GsUVpVqu-oRGn8USe_KCK8qI_YVi5cu5nJ3N2TpaK1EiHnZ_9wst-XYDrS5gB26ih6vEb9Y_zb17ePzYPj6Vlko8meGyvuEYkuK7mA53aNx_yfADXj1OxR3k6rNlAFc1aZ9wPSE318PxFro9O52MzknhSSCWD9SUCCMpA1AQOA0qBBWDnmiYwtkahKS-AmMaEwwIMDE7sCCEDzQwE5rGy2jW22i5fW79DsJUysBcgExKLBoXRcyDhcbKWlonQg_Rmci0LSDiicvij87JxKDRnZx1krMucu6h4_lLLx2GxvfDf6e9mA9NANj5QVQLXdRC_08temgz7eR8EpnvdngP7c92VhdjfdOUiwRaw5Ta_YlP76GVtJzunmYfLU9f3_1BjFym5jAr6WFuMvwHjTvoZw
linkProvider Directory of Open Access Journals
linkToHtml http://utb.summon.serialssolutions.com/2.0.0/link/0/eLvHCXMwjV1Lb9QwEB6VcgAOFCioCwVy4Fjvw4_YPi6rVgs0VQVbVE6Wn1JFm6J2Vwh-PbbjTStAiFsU2dZEM_bMODPfB_CGGeyoJRoJ7BKotqdIWxGQj96NTIwxjqd-5-aonp_Q96fsdAP2-l4Y730uPvPD9Jj_5btLu0pXZSOeE3R6B-5Gv89w163V36gkCgnJeIEWmozlaDqbxa9I9Vv1EEc_RRJj8i33k1H6C63KH2dxdjAHW9CsRevqSr4OV0sztD9_Q238X9kfwcMSaVbTzjQew4Zvn8CDW_iD2_DlOHGkjfZz_1_VnLVnF6Uts1qssV2vqxjWVp9jSt0hev9A0-_6ylepQAQd37QdVJMatRdVvUCfPk6bp3BysL-YzVHhWkCWjsUSMcMx0VroQHEQIYgYOMXNzZytNePYT7Qx0gSjmTYxw7CaMR9wICZI6Xk8Gp7BZnvZ-h2oMOeBuKAzsTGTThhBg9XS8ppbx8IA8FoFyhYg8sSHca5yQjKWqtObSnpTRW8D2OsnfetwOP49_G3SbT80gWjnF1EnquxJleluOCFxoqYunvxjp42trfY6ykziIttJj_0iRYUD2F1biiob_lrhaJCSCiLE87_Peg335ovmUB2-O_rwAu4nYbubnF3YXF6t_MsY2yzNq2zSvwAt4fSY
openUrl ctx_ver=Z39.88-2004&ctx_enc=info%3Aofi%2Fenc%3AUTF-8&rfr_id=info%3Asid%2Fsummon.serialssolutions.com&rft_val_fmt=info%3Aofi%2Ffmt%3Akev%3Amtx%3Ajournal&rft.genre=article&rft.atitle=Power%2FEnergy+Minimization+Techniques+for+Variability-Aware+High-Performance+16-nm+6T-SRAM&rft.jtitle=IEEE+access&rft.au=Samandari-Rad%2C+Jeren&rft.au=Hughey%2C+Richard&rft.date=2016&rft.issn=2169-3536&rft.eissn=2169-3536&rft.volume=4&rft.spage=594&rft.epage=613&rft_id=info:doi/10.1109%2FACCESS.2016.2521385&rft.externalDBID=n%2Fa&rft.externalDocID=10_1109_ACCESS_2016_2521385
thumbnail_l http://covers-cdn.summon.serialssolutions.com/index.aspx?isbn=/lc.gif&issn=2169-3536&client=summon
thumbnail_m http://covers-cdn.summon.serialssolutions.com/index.aspx?isbn=/mc.gif&issn=2169-3536&client=summon
thumbnail_s http://covers-cdn.summon.serialssolutions.com/index.aspx?isbn=/sc.gif&issn=2169-3536&client=summon