Benzocyclobutene polymer filling of high aspect-ratio annular trenches for fabrication of Through-Silicon-Vias (TSVs)
Through-Silicon-Vias (TSVs) with polymer liners have potential improved electrical and mechanical reliability for three-dimensional (3D) packaging/integration applications. To address the challenge in fabrication of polymer liners in high aspect-ratio TSVs, we have developed a vacuum-assisted spin-c...
Saved in:
| Published in | Microelectronics and reliability Vol. 52; no. 11; pp. 2670 - 2676 |
|---|---|
| Main Authors | , , |
| Format | Journal Article |
| Language | English |
| Published |
Kidlington
Elsevier Ltd
01.11.2012
Elsevier |
| Subjects | |
| Online Access | Get full text |
Cover
Loading…
| Abstract | Through-Silicon-Vias (TSVs) with polymer liners have potential improved electrical and mechanical reliability for three-dimensional (3D) packaging/integration applications. To address the challenge in fabrication of polymer liners in high aspect-ratio TSVs, we have developed a vacuum-assisted spin-coating technology for filling benzocyclobutene (BCB) polymer in high aspect-ratio annular trenches. The newly developed spin-coating technology employs spin-coating twice and vacuum treatment after each coating. The vacuum treatment removes the bubbles at the trench bottom trapped during spin-coating and curing, and facilities the formation of void-free BCB filling. The influences of the BCB viscosities and the spin-coating parameters on the filling ability are evaluated, and upon optimization annular trenches with aspect-ratio as high as 22 have been successfully filled with no void formation, thin overburden, and slight dishing. This method is also applicable to trench filling using polymers with similar properties. |
|---|---|
| AbstractList | Through-Silicon-Vias (TSVs) with polymer liners have potential improved electrical and mechanical reliability for three-dimensional (3D) packaging/integration applications. To address the challenge in fabrication of polymer liners in high aspect-ratio TSVs, we have developed a vacuum-assisted spin-coating technology for filling benzocyclobutene (BCB) polymer in high aspect-ratio annular trenches. The newly developed spin-coating technology employs spin-coating twice and vacuum treatment after each coating. The vacuum treatment removes the bubbles at the trench bottom trapped during spin-coating and curing, and facilities the formation of void-free BCB filling. The influences of the BCB viscosities and the spin-coating parameters on the filling ability are evaluated, and upon optimization annular trenches with aspect-ratio as high as 22 have been successfully filled with no void formation, thin overburden, and slight dishing. This method is also applicable to trench filling using polymers with similar properties. |
| Author | Chen, Qianwen Wang, Zheyao Huang, Cui |
| Author_xml | – sequence: 1 givenname: Qianwen surname: Chen fullname: Chen, Qianwen – sequence: 2 givenname: Cui surname: Huang fullname: Huang, Cui – sequence: 3 givenname: Zheyao surname: Wang fullname: Wang, Zheyao email: z.wang@tsinghua.edu.cn |
| BackLink | http://pascal-francis.inist.fr/vibad/index.php?action=getRecordDetail&idt=26549249$$DView record in Pascal Francis |
| BookMark | eNqFkE1rGzEQhkVxobbbv1B0KbSH3YzWu7L21sQ0H2DIwa7pTcjakVdGloy0Dji_vjJucu1pYOZ9ZphnQkY-eCTkK4OSAeM3-_JgdQwRXVkBq0rgJQD7QMZMzKuirdmfERkDVLyo5qz-RCYp7QFgDoyNyekO_WvQZ-3C9jSgR3oM7nzASI11zvodDYb2dtdTlY6ohyKqwQaqvD85FekQ0eseEzUhE2obrb7M_YVa9zGcdn2xss7q4IuNVYl-X6826cdn8tEol_DLvzolv-9_rRePxfL54Wlxuyx0DWIoGqaAz1sjhMGuM3WrZ0KIbVNxrtpOtDXXrMGZaGZC1cwYZAJyjzcN1y0HnE0Jv-7NflKKaOQx2oOKZ8lAXuTJvXyTJy_yJHCZ5WXw2xU8qqSVM1F5bdM7XfGmbqu6zbmf1xzmL14sRpm0zUqwszHbkl2w_zv1F6ctjD8 |
| CODEN | MCRLAS |
| CitedBy_id | crossref_primary_10_1149_2_0141910jss crossref_primary_10_1016_j_mee_2015_09_009 crossref_primary_10_1587_elex_12_20150400 crossref_primary_10_1016_j_microrel_2014_02_030 crossref_primary_10_1016_j_mee_2014_12_009 crossref_primary_10_1007_s11431_014_5551_z crossref_primary_10_1109_TED_2013_2244895 crossref_primary_10_1109_TED_2015_2504093 crossref_primary_10_1016_j_tsf_2017_01_012 crossref_primary_10_1109_TCPMT_2016_2620984 crossref_primary_10_1016_j_microrel_2012_12_012 crossref_primary_10_1016_j_microrel_2016_08_003 crossref_primary_10_1109_TCPMT_2013_2241179 crossref_primary_10_1109_JDT_2015_2493368 crossref_primary_10_1007_s00542_014_2324_3 crossref_primary_10_1007_s00542_016_3243_2 crossref_primary_10_1016_j_matlet_2015_08_140 crossref_primary_10_1109_TCPMT_2014_2363659 crossref_primary_10_1016_j_sna_2024_115256 crossref_primary_10_2320_matertrans_M2015335 crossref_primary_10_1017_jfm_2017_190 crossref_primary_10_1109_TCPMT_2016_2514365 crossref_primary_10_1007_s11431_016_0266_6 |
| Cites_doi | 10.1109/TCPMT.2011.2114885 10.1016/j.mee.2009.11.165 10.1007/s00542-009-0976-1 10.1016/j.microrel.2006.09.002 10.1109/JPROC.2008.2007458 10.1016/j.microrel.2009.09.015 10.1016/j.microrel.2010.07.019 10.1109/TED.2006.884079 10.1016/j.mee.2005.07.005 10.1147/JRD.2008.5388564 10.1109/EPTC.2009.5416443 10.1109/TDMR.2010.2068572 10.1109/TCPMT.2011.2160395 10.1016/j.microrel.2011.06.003 10.1147/JRD.2008.5388565 10.1109/LED.2011.2141109 10.1016/j.microrel.2006.09.003 10.1116/1.3532828 10.1109/IITC.2011.5940352 10.1007/s00542-009-0894-2 10.1109/JPROC.2006.873612 10.1109/ECTC.2009.5074158 10.1109/TED.2006.882043 10.1016/j.microrel.2009.10.012 10.1016/S0167-9317(96)00061-5 |
| ContentType | Journal Article |
| Copyright | 2012 Elsevier Ltd 2015 INIST-CNRS |
| Copyright_xml | – notice: 2012 Elsevier Ltd – notice: 2015 INIST-CNRS |
| DBID | IQODW AAYXX CITATION |
| DOI | 10.1016/j.microrel.2012.06.001 |
| DatabaseName | Pascal-Francis CrossRef |
| DatabaseTitle | CrossRef |
| DatabaseTitleList | |
| DeliveryMethod | fulltext_linktorsrc |
| Discipline | Engineering Applied Sciences |
| EISSN | 1872-941X |
| EndPage | 2676 |
| ExternalDocumentID | 10_1016_j_microrel_2012_06_001 26549249 S0026271412001850 |
| GroupedDBID | --K --M .DC .~1 0R~ 123 1B1 1~. 1~5 29M 4.4 457 4G. 5VS 7-5 71M 8P~ 9JN AABNK AABXZ AACTN AAEDT AAEDW AAEPC AAIAV AAIKJ AAKOC AALRI AAOAW AAQFI AAQXK AAXUO AAYFN ABBOA ABFNM ABFRF ABJNI ABMAC ABXDB ABXRA ABYKQ ACDAQ ACGFS ACNNM ACRLP ACZNC ADBBV ADEZE ADJOM ADMUD ADTZH AEBSH AECPX AEFWE AEKER AENEX AEZYN AFKWA AFRZQ AFTJW AGHFR AGUBO AGYEJ AHHHB AHJVU AHZHX AIALX AIEXJ AIKHN AITUG AJBFU AJOXV ALMA_UNASSIGNED_HOLDINGS AMFUW AMRAJ AOUOD AXJTR AZFZN BJAXD BKOJK BLXMC CS3 DU5 EBS EFJIC EFLBG EJD EO8 EO9 EP2 EP3 F5P FDB FEDTE FGOYB FIRID FNPLU FYGXN G-2 G-Q GBLVA GBOLZ HVGLF HZ~ IHE J1W JJJVA KOM LY7 M41 MAGPM MO0 N9A O-L O9- OAUVE OZT P-8 P-9 P2P PC. Q38 R2- RIG RNS ROL RPZ RXW SDF SDG SES SET SEW SPC SPCBC SPD SSM SST SSV SSZ T5K T9H TAE UHS UNMZH WUQ XOL ZMT ~G- 08R AAPBV ABPIF ABPTK IQODW AAXKI AAYXX AFJKZ AKRWK CITATION |
| ID | FETCH-LOGICAL-c408t-51a0679f88feddf49c3888b5266a9d8946c15e38538a41ffe18046c6556c960e3 |
| IEDL.DBID | .~1 |
| ISSN | 0026-2714 |
| IngestDate | Thu Sep 26 16:26:10 EDT 2024 Sun Oct 22 16:05:12 EDT 2023 Fri Feb 23 02:36:58 EST 2024 |
| IsPeerReviewed | true |
| IsScholarly | true |
| Issue | 11 |
| Keywords | Viscosity Trench technology Polymer Aspect ratio Optimization Hardening Three dimensional model Three dimensional structure Cyclobutene derivative Interconnection Electronic packaging Spin-on coatings Integrated circuit Silicon Void Reliability Via hole |
| Language | English |
| License | CC BY 4.0 |
| LinkModel | DirectLink |
| MergedId | FETCHMERGED-LOGICAL-c408t-51a0679f88feddf49c3888b5266a9d8946c15e38538a41ffe18046c6556c960e3 |
| PageCount | 7 |
| ParticipantIDs | crossref_primary_10_1016_j_microrel_2012_06_001 pascalfrancis_primary_26549249 elsevier_sciencedirect_doi_10_1016_j_microrel_2012_06_001 |
| PublicationCentury | 2000 |
| PublicationDate | 2012-11-01 |
| PublicationDateYYYYMMDD | 2012-11-01 |
| PublicationDate_xml | – month: 11 year: 2012 text: 2012-11-01 day: 01 |
| PublicationDecade | 2010 |
| PublicationPlace | Kidlington |
| PublicationPlace_xml | – name: Kidlington |
| PublicationTitle | Microelectronics and reliability |
| PublicationYear | 2012 |
| Publisher | Elsevier Ltd Elsevier |
| Publisher_xml | – name: Elsevier Ltd – name: Elsevier |
| References | Knickerbocker, Andry, Dang, Horton, Interrante, Patel (b0035) 2008; 52 van Gils, van der Sluis, Zhang, Janssen, Voncken (b0085) 2007; 47 Ramm, Klumpp, Weber, Taklo (b0010) 2010; 16 Hsin, Chen, Lau, Tzeng, Shen, Hsu (b0045) 2011; 61 Ranganathan, Lee, Youhe, Lo, Prasad, Pey (b0050) 2011; 1 Bea, Lee, Fukushima, Tanaka, Koyanagi (b0055) 2011; 32 Modafe, Ghalichechian, Powers, Khbeis, Ghodssi (b0140) 2005; 82 Chen, Wang, Tan, Liu (b0125) 2010; 87 Koyanagi, Nakamura, Yamada, Kikuchi (b0020) 2006; 53 Civale Y, Croes K, Miyamori Y, Thangaraju S, Redolfi A, Van Ammel A, et al. Thermal stability of copper through-silicon via barriers during IC processing. IEEE Intl Interconnect Tech Conf and Mat Adv Metallization (IITC/MAM) 2011;1–3. Tezcan D S, Duval F, Philipsen H, Luhn O, Soussan P, Swinnen B. Scalable through silicon via with polymer deep trench isolation for 3D wafer level packaging. IEEE Electron Comp Tech Conf 2009:1159–1164. Chen, Zhang, Tan, Wang, Liu, Lu (b0130) 2011; 29 Patti (b0015) 2006; 94 Tan, Tan, Zhang, Chai, Yu (b0070) 2010; 50 Kotb, Isoird, Morancho, Théolier, Conto (b0115) 2009; 15 Duval, Okoro, Civale, Soussan, Beyne (b0110) 2011; 6 Lu (b0005) 2009; 97 Schoenfelder, Ebert, Landesberger, Bock, Bagdahn (b0080) 2007; 47 De Wolf, Croes, Pedreira, Labie, Redolfi, Van De Peer (b0095) 2011; 51 Yang, Labie, Ling, Zhao, Radisic, Van Olmen (b0060) 2010; 50 Shen, Chien, Cheng, Lin (b0075) 2010; 50 Mills, Townsend, Castillo, Martin, Achen (b0135) 1997; 33 Koester, Young, Yu, Purushothaman, Chen, La Tulipe (b0025) 2008; 52 Ko, Chen (b0040) 2010; 50 Selvanayagam, Zhang, Rajoo, Pinjala (b0100) 2011; 1 Burns, Aull, Chen, Chen (b0030) 2006; 53 Ryu, Lu, Zhang, Im, Ho, Huang (b0090) 2011; 11 Chausse P, Bouchoucha M, Henry D, Sillon N, Chapelon LL. Polymer filling of medium density through silicon via for 3-Dpackaging. In 11th IEEE electron pack tech conf Singapore 2009:790–794. Mills (10.1016/j.microrel.2012.06.001_b0135) 1997; 33 Selvanayagam (10.1016/j.microrel.2012.06.001_b0100) 2011; 1 Koester (10.1016/j.microrel.2012.06.001_b0025) 2008; 52 Burns (10.1016/j.microrel.2012.06.001_b0030) 2006; 53 Yang (10.1016/j.microrel.2012.06.001_b0060) 2010; 50 Ranganathan (10.1016/j.microrel.2012.06.001_b0050) 2011; 1 10.1016/j.microrel.2012.06.001_b0105 Bea (10.1016/j.microrel.2012.06.001_b0055) 2011; 32 Chen (10.1016/j.microrel.2012.06.001_b0125) 2010; 87 Modafe (10.1016/j.microrel.2012.06.001_b0140) 2005; 82 Ramm (10.1016/j.microrel.2012.06.001_b0010) 2010; 16 Tan (10.1016/j.microrel.2012.06.001_b0070) 2010; 50 Duval (10.1016/j.microrel.2012.06.001_b0110) 2011; 6 10.1016/j.microrel.2012.06.001_b0065 10.1016/j.microrel.2012.06.001_b0120 Ryu (10.1016/j.microrel.2012.06.001_b0090) 2011; 11 Koyanagi (10.1016/j.microrel.2012.06.001_b0020) 2006; 53 Hsin (10.1016/j.microrel.2012.06.001_b0045) 2011; 61 Kotb (10.1016/j.microrel.2012.06.001_b0115) 2009; 15 Schoenfelder (10.1016/j.microrel.2012.06.001_b0080) 2007; 47 Patti (10.1016/j.microrel.2012.06.001_b0015) 2006; 94 van Gils (10.1016/j.microrel.2012.06.001_b0085) 2007; 47 Lu (10.1016/j.microrel.2012.06.001_b0005) 2009; 97 Knickerbocker (10.1016/j.microrel.2012.06.001_b0035) 2008; 52 Ko (10.1016/j.microrel.2012.06.001_b0040) 2010; 50 Chen (10.1016/j.microrel.2012.06.001_b0130) 2011; 29 De Wolf (10.1016/j.microrel.2012.06.001_b0095) 2011; 51 Shen (10.1016/j.microrel.2012.06.001_b0075) 2010; 50 |
| References_xml | – volume: 50 start-page: 489 year: 2010 end-page: 497 ident: b0075 article-title: Development of three-dimensional chip stacking technology using a clamped Through-Silicon Via interconnection publication-title: Microelectron Reliab contributor: fullname: Lin – volume: 47 start-page: 179 year: 2007 end-page: 186 ident: b0085 article-title: Analysis of Cu/low-k bond pad delamination by using a novel failure index publication-title: Microelectron Reliab contributor: fullname: Voncken – volume: 52 start-page: 553 year: 2008 end-page: 569 ident: b0035 article-title: Three-dimensional silicon integration publication-title: IBM J Res & Dev contributor: fullname: Patel – volume: 94 start-page: 1214 year: 2006 end-page: 1224 ident: b0015 article-title: Three-dimensional integrated circuits and the future of system-on-chip designs publication-title: Proc IEEE contributor: fullname: Patti – volume: 6 start-page: 825 year: 2011 end-page: 836 ident: b0110 article-title: Polymer filling of silicon trenches for 3-D through silicon vias applications publication-title: IEEE Trans Comp Pack Manuf Tech contributor: fullname: Beyne – volume: 29 start-page: 011019 year: 2011 ident: b0130 article-title: Thick benzocyclobutene etching using high density SF6/O2 plasma publication-title: J Vac Sci Technol B contributor: fullname: Lu – volume: 32 start-page: 940 year: 2011 end-page: 942 ident: b0055 article-title: Evaluation of Cu diffusion from Cu Through-Silicon Via (TSV) in three-dimensional LSI by transient capacitance measurement publication-title: IEEE Electron Dev Lett contributor: fullname: Koyanagi – volume: 50 start-page: 1328 year: 2010 end-page: 1335 ident: b0070 article-title: Electromigration performance of through silicon via (TSV) - a modeling approach publication-title: Microelectron Reliab contributor: fullname: Yu – volume: 16 start-page: 1051 year: 2010 end-page: 1055 ident: b0010 article-title: 3D System-on-chip technologies for more than Moore systems publication-title: Microsyst Technol contributor: fullname: Taklo – volume: 87 start-page: 19451950 year: 2010 ident: b0125 article-title: Characterization of reactive ion etching of benzocyclobutene in SF6/O2 plasmas publication-title: Microelectron Eng. contributor: fullname: Liu – volume: 15 start-page: 1395 year: 2009 end-page: 1400 ident: b0115 article-title: Filling of very deep, wide trenches by benzocyclobutene polymer publication-title: Microsyst Technol contributor: fullname: Conto – volume: 82 start-page: 154 year: 2005 end-page: 167 ident: b0140 article-title: Embedded benzocyclobutene in silicon: an integrated fabrication process for electrical and thermal isolation in MEMS publication-title: Microelectron Eng contributor: fullname: Ghodssi – volume: 50 start-page: 481 year: 2010 end-page: 488 ident: b0040 article-title: Wafer-level bonding/stacking technology for 3D integration publication-title: Microelectron Reliab contributor: fullname: Chen – volume: 61 start-page: 1130 year: 2011 end-page: 1135 ident: b0045 article-title: Effects of etch rate on scallop of Through-Silicon Vias (TSVs) in 200 publication-title: IEEE Electronic Comp Tech Conf contributor: fullname: Hsu – volume: 1 start-page: 1497 year: 2011 end-page: 1507 ident: b0100 article-title: Modeling stress in silicon with TSVs and its effect on mobility publication-title: IEEE Trans Comp Pack Manuf Technol contributor: fullname: Pinjala – volume: 47 start-page: 168 year: 2007 end-page: 178 ident: b0080 article-title: Investigations of the influence of dicing techniques on the strength properties of thin silicon publication-title: Microelectron Reliab contributor: fullname: Bagdahn – volume: 50 start-page: 1636 year: 2010 end-page: 1640 ident: b0060 article-title: Processing assessment and adhesion evaluation of copper Through-Silicon Vias (TSVs) for three-dimensional stacked-integrated circuit (3D-SIC) architectures publication-title: Microelectronics Reliab contributor: fullname: Van Olmen – volume: 33 start-page: 327 year: 1997 end-page: 334 ident: b0135 article-title: Benzocyclobutene (DVS-BCB) polymer as an interlayer dielectric (ILD) material publication-title: Microelectron Eng contributor: fullname: Achen – volume: 97 start-page: 18 year: 2009 end-page: 30 ident: b0005 article-title: 3-D hyperintegration and packaging technologies for micro publication-title: Proc IEEE contributor: fullname: Lu – volume: 11 start-page: 35 year: 2011 end-page: 43 ident: b0090 article-title: Impact of near-surface thermal stresses on interfacial reliability of Through-Silicon Vias for 3-D interconnects publication-title: IEEE Trans Dev Mat Reliab contributor: fullname: Huang – volume: 53 start-page: 2799 year: 2006 end-page: 2808 ident: b0020 article-title: Three-dimensional integration technology based on wafer bonding with vertical buried interconnections publication-title: IEEE Trans Electron Dev contributor: fullname: Kikuchi – volume: 1 start-page: 1497 year: 2011 end-page: 1507 ident: b0050 article-title: Influence of Bosch etch process on electrical isolation of TSV structures publication-title: IEEE Trans Comp Pack Manuf Technol contributor: fullname: Pey – volume: 52 start-page: 583 year: 2008 end-page: 597 ident: b0025 article-title: Wafer-level 3D integration technology publication-title: IBM J Res & Dev contributor: fullname: La Tulipe – volume: 53 start-page: 2507 year: 2006 end-page: 2516 ident: b0030 article-title: A wafer-scale 3-D circuit integration technology publication-title: IEEE Trans Electron Dev contributor: fullname: Chen – volume: 51 start-page: 1856 year: 2011 end-page: 1859 ident: b0095 article-title: Cu pumping in TSVs: effect of pre-CMP thermal budget publication-title: Microelectron Reliab contributor: fullname: Van De Peer – volume: 6 start-page: 825 year: 2011 ident: 10.1016/j.microrel.2012.06.001_b0110 article-title: Polymer filling of silicon trenches for 3-D through silicon vias applications publication-title: IEEE Trans Comp Pack Manuf Tech doi: 10.1109/TCPMT.2011.2114885 contributor: fullname: Duval – volume: 87 start-page: 19451950 year: 2010 ident: 10.1016/j.microrel.2012.06.001_b0125 article-title: Characterization of reactive ion etching of benzocyclobutene in SF6/O2 plasmas publication-title: Microelectron Eng. doi: 10.1016/j.mee.2009.11.165 contributor: fullname: Chen – volume: 16 start-page: 1051 year: 2010 ident: 10.1016/j.microrel.2012.06.001_b0010 article-title: 3D System-on-chip technologies for more than Moore systems publication-title: Microsyst Technol doi: 10.1007/s00542-009-0976-1 contributor: fullname: Ramm – volume: 47 start-page: 168 issue: 2–3 year: 2007 ident: 10.1016/j.microrel.2012.06.001_b0080 article-title: Investigations of the influence of dicing techniques on the strength properties of thin silicon publication-title: Microelectron Reliab doi: 10.1016/j.microrel.2006.09.002 contributor: fullname: Schoenfelder – volume: 97 start-page: 18 year: 2009 ident: 10.1016/j.microrel.2012.06.001_b0005 article-title: 3-D hyperintegration and packaging technologies for micro–nano systems publication-title: Proc IEEE doi: 10.1109/JPROC.2008.2007458 contributor: fullname: Lu – volume: 1 start-page: 1497 issue: 9 year: 2011 ident: 10.1016/j.microrel.2012.06.001_b0100 article-title: Modeling stress in silicon with TSVs and its effect on mobility publication-title: IEEE Trans Comp Pack Manuf Technol contributor: fullname: Selvanayagam – volume: 50 start-page: 481 issue: 4 year: 2010 ident: 10.1016/j.microrel.2012.06.001_b0040 article-title: Wafer-level bonding/stacking technology for 3D integration publication-title: Microelectron Reliab doi: 10.1016/j.microrel.2009.09.015 contributor: fullname: Ko – volume: 50 start-page: 1636 issue: 9–11 year: 2010 ident: 10.1016/j.microrel.2012.06.001_b0060 article-title: Processing assessment and adhesion evaluation of copper Through-Silicon Vias (TSVs) for three-dimensional stacked-integrated circuit (3D-SIC) architectures publication-title: Microelectronics Reliab doi: 10.1016/j.microrel.2010.07.019 contributor: fullname: Yang – volume: 50 start-page: 1328 issue: 9–11 year: 2010 ident: 10.1016/j.microrel.2012.06.001_b0070 article-title: Electromigration performance of through silicon via (TSV) - a modeling approach publication-title: Microelectron Reliab contributor: fullname: Tan – volume: 53 start-page: 2799 year: 2006 ident: 10.1016/j.microrel.2012.06.001_b0020 article-title: Three-dimensional integration technology based on wafer bonding with vertical buried interconnections publication-title: IEEE Trans Electron Dev doi: 10.1109/TED.2006.884079 contributor: fullname: Koyanagi – volume: 82 start-page: 154 issue: 2 year: 2005 ident: 10.1016/j.microrel.2012.06.001_b0140 article-title: Embedded benzocyclobutene in silicon: an integrated fabrication process for electrical and thermal isolation in MEMS publication-title: Microelectron Eng doi: 10.1016/j.mee.2005.07.005 contributor: fullname: Modafe – volume: 52 start-page: 553 year: 2008 ident: 10.1016/j.microrel.2012.06.001_b0035 article-title: Three-dimensional silicon integration publication-title: IBM J Res & Dev doi: 10.1147/JRD.2008.5388564 contributor: fullname: Knickerbocker – ident: 10.1016/j.microrel.2012.06.001_b0120 doi: 10.1109/EPTC.2009.5416443 – volume: 11 start-page: 35 issue: 1 year: 2011 ident: 10.1016/j.microrel.2012.06.001_b0090 article-title: Impact of near-surface thermal stresses on interfacial reliability of Through-Silicon Vias for 3-D interconnects publication-title: IEEE Trans Dev Mat Reliab doi: 10.1109/TDMR.2010.2068572 contributor: fullname: Ryu – volume: 1 start-page: 1497 issue: 10 year: 2011 ident: 10.1016/j.microrel.2012.06.001_b0050 article-title: Influence of Bosch etch process on electrical isolation of TSV structures publication-title: IEEE Trans Comp Pack Manuf Technol doi: 10.1109/TCPMT.2011.2160395 contributor: fullname: Ranganathan – volume: 51 start-page: 1856 issue: 9–11 year: 2011 ident: 10.1016/j.microrel.2012.06.001_b0095 article-title: Cu pumping in TSVs: effect of pre-CMP thermal budget publication-title: Microelectron Reliab doi: 10.1016/j.microrel.2011.06.003 contributor: fullname: De Wolf – volume: 52 start-page: 583 year: 2008 ident: 10.1016/j.microrel.2012.06.001_b0025 article-title: Wafer-level 3D integration technology publication-title: IBM J Res & Dev doi: 10.1147/JRD.2008.5388565 contributor: fullname: Koester – volume: 32 start-page: 940 year: 2011 ident: 10.1016/j.microrel.2012.06.001_b0055 article-title: Evaluation of Cu diffusion from Cu Through-Silicon Via (TSV) in three-dimensional LSI by transient capacitance measurement publication-title: IEEE Electron Dev Lett doi: 10.1109/LED.2011.2141109 contributor: fullname: Bea – volume: 47 start-page: 179 issue: 2–3 year: 2007 ident: 10.1016/j.microrel.2012.06.001_b0085 article-title: Analysis of Cu/low-k bond pad delamination by using a novel failure index publication-title: Microelectron Reliab doi: 10.1016/j.microrel.2006.09.003 contributor: fullname: van Gils – volume: 29 start-page: 011019 issue: 1 year: 2011 ident: 10.1016/j.microrel.2012.06.001_b0130 article-title: Thick benzocyclobutene etching using high density SF6/O2 plasma publication-title: J Vac Sci Technol B doi: 10.1116/1.3532828 contributor: fullname: Chen – volume: 61 start-page: 1130 year: 2011 ident: 10.1016/j.microrel.2012.06.001_b0045 article-title: Effects of etch rate on scallop of Through-Silicon Vias (TSVs) in 200mm and 300mm wafers publication-title: IEEE Electronic Comp Tech Conf contributor: fullname: Hsin – ident: 10.1016/j.microrel.2012.06.001_b0065 doi: 10.1109/IITC.2011.5940352 – volume: 15 start-page: 1395 issue: 9 year: 2009 ident: 10.1016/j.microrel.2012.06.001_b0115 article-title: Filling of very deep, wide trenches by benzocyclobutene polymer publication-title: Microsyst Technol doi: 10.1007/s00542-009-0894-2 contributor: fullname: Kotb – volume: 94 start-page: 1214 year: 2006 ident: 10.1016/j.microrel.2012.06.001_b0015 article-title: Three-dimensional integrated circuits and the future of system-on-chip designs publication-title: Proc IEEE doi: 10.1109/JPROC.2006.873612 contributor: fullname: Patti – ident: 10.1016/j.microrel.2012.06.001_b0105 doi: 10.1109/ECTC.2009.5074158 – volume: 53 start-page: 2507 year: 2006 ident: 10.1016/j.microrel.2012.06.001_b0030 article-title: A wafer-scale 3-D circuit integration technology publication-title: IEEE Trans Electron Dev doi: 10.1109/TED.2006.882043 contributor: fullname: Burns – volume: 50 start-page: 489 issue: 4 year: 2010 ident: 10.1016/j.microrel.2012.06.001_b0075 article-title: Development of three-dimensional chip stacking technology using a clamped Through-Silicon Via interconnection publication-title: Microelectron Reliab doi: 10.1016/j.microrel.2009.10.012 contributor: fullname: Shen – volume: 33 start-page: 327 issue: 1–4 year: 1997 ident: 10.1016/j.microrel.2012.06.001_b0135 article-title: Benzocyclobutene (DVS-BCB) polymer as an interlayer dielectric (ILD) material publication-title: Microelectron Eng doi: 10.1016/S0167-9317(96)00061-5 contributor: fullname: Mills |
| SSID | ssj0007011 |
| Score | 2.2211225 |
| Snippet | Through-Silicon-Vias (TSVs) with polymer liners have potential improved electrical and mechanical reliability for three-dimensional (3D) packaging/integration... |
| SourceID | crossref pascalfrancis elsevier |
| SourceType | Aggregation Database Index Database Publisher |
| StartPage | 2670 |
| SubjectTerms | Applied sciences Design. Technologies. Operation analysis. Testing Electronics Exact sciences and technology Integrated circuits Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices |
| Title | Benzocyclobutene polymer filling of high aspect-ratio annular trenches for fabrication of Through-Silicon-Vias (TSVs) |
| URI | https://dx.doi.org/10.1016/j.microrel.2012.06.001 |
| Volume | 52 |
| hasFullText | 1 |
| inHoldings | 1 |
| isFullTextHit | |
| isPrint | |
| link | http://utb.summon.serialssolutions.com/2.0.0/link/0/eLvHCXMwpV07T8MwELaqsoAQ4inKo_LAAIPbJrFdZywVVQHRpQ91i2zHFqnapOpjKAO_HTsPaAfEwJgol0R3p3v5vjsA7kgoQ0Ydijj1fYSbmiGBmxhR5lEfMy14OlLorUe7Q_wyJuMSaBdYGNtWmdv-zKan1jq_U8-5WZ9HkcX4utRtOtixbUEszduxcUZGp2ufP20ezYaTbc1zKbJPb6GEJ7WZbXpbKHsEYWuC6bnEbw7qcM6Xhm0623ex5YQ6x-Aojx5hK_vBE1BS8Sk42JopeAbWjyr-SORGThOxNgGxgvNkupmpBdRROn8bJhraIcWQpyhLlKoAtIhhk-TClUX_vaslNMEs1Fws8pqepRpkO31QP5oa_YnRKOJLeD_oj5YP52DYeRq0uyjfrYAkbrAVIg63JSTNmFZhqLEvPZMLC2L8NfdD5mMqHaI848wZx47WymEmk5aUECpN0qO8C1COk1hdAiik9pSJk0RILZngEocu1R5TJDTRCKmAesHQYJ6N0AiK3rJJUIggsCIIsia7CvALvgc7yhAYO_8nbXVHUN-fdKkdRof9q3-8_Brs26sMi3gDyqvFWt2aoGQlqqnWVcFe6_m12_sCfRLjRQ |
| link.rule.ids | 315,786,790,4521,24144,27957,27958,45620,45714 |
| linkProvider | Elsevier |
| linkToHtml | http://utb.summon.serialssolutions.com/2.0.0/link/0/eLvHCXMwpV07T8MwELYqGAAhxFOUR_HAAIMpSWzXGaECledCQWyR7dgiVZtUfQxl4LfjywPKgBhYk1wSnU9339n33SF0zGIdC-5xInkYEtqygijaooSLgIdUWCXzlkIPj7zzTG9f2WsNtSsuDJRVlr6_8Om5ty6vNEttNodJAhxfn_stj3pQFiQgb18EOA_zG84-vus8WudeMTbP5wQen6MJ984GUPU2MnAGAZuC-cHEbxFqdSjHTm-2GHgxF4Wu19FaCR_xRfGHG6hm0k20MtdUcAtNL036numZ7mdq6hCxwcOsPxuYEbZJ3oAbZxZDl2Isc5olyW0AA2XYZbl4AvS_NzPGDs1iK9Wo3NQDqW4x1Ic8JX1nQCl5SeQYn3SfXsan2-j5-qrb7pByuALR9FxMCPMk7CFZIayJY0tDHbhkWDEXsGUYi5By7TETuGguJPWsNZ5wqbTmjHHtsh4T7KCFNEvNLsJK28A4oKRiDmJKahr73AbCsNjBEVZHzUqh0bDooRFVxWW9qFqCCJYgKqrs6iis9B79sIbIOfo_ZRs_Furrkz6HbnQ03PvHy4_QUqf7cB_d3zze7aNluFMQEw_QwmQ0NYcOoUxUI7fAT8yO5Nc |
| openUrl | ctx_ver=Z39.88-2004&ctx_enc=info%3Aofi%2Fenc%3AUTF-8&rfr_id=info%3Asid%2Fsummon.serialssolutions.com&rft_val_fmt=info%3Aofi%2Ffmt%3Akev%3Amtx%3Ajournal&rft.genre=article&rft.atitle=Benzocyclobutene+polymer+filling+of+high+aspect-ratio+annular+trenches+for+fabrication+of+Through-Silicon-Vias+%28TSVs%29&rft.jtitle=Microelectronics+and+reliability&rft.au=QIANWEN+CHEN&rft.au=CUI+HUANG&rft.au=ZHEYAO+WANG&rft.date=2012-11-01&rft.pub=Elsevier&rft.issn=0026-2714&rft.eissn=1872-941X&rft.volume=52&rft.issue=11&rft.spage=2670&rft.epage=2676&rft_id=info:doi/10.1016%2Fj.microrel.2012.06.001&rft.externalDBID=n%2Fa&rft.externalDocID=26549249 |
| thumbnail_l | http://covers-cdn.summon.serialssolutions.com/index.aspx?isbn=/lc.gif&issn=0026-2714&client=summon |
| thumbnail_m | http://covers-cdn.summon.serialssolutions.com/index.aspx?isbn=/mc.gif&issn=0026-2714&client=summon |
| thumbnail_s | http://covers-cdn.summon.serialssolutions.com/index.aspx?isbn=/sc.gif&issn=0026-2714&client=summon |