Semiconductor-dielectric-metal solar absorbers with high spectral selectivity

An ideal solar thermal absorber has a sharp transition between high and low absorptance at the wavelength where the blackbody emissive power begins to exceed the solar irradiance. However, most real selective absorbers have a fairly broad transition, leading to both solar absorption and thermal emis...

Full description

Saved in:
Bibliographic Details
Published inSolar energy materials and solar cells Vol. 240; no. C; p. 111735
Main Authors Tervo, Eric J., Steiner, Myles A.
Format Journal Article
LanguageEnglish
Published Amsterdam Elsevier B.V 15.06.2022
Elsevier BV
Elsevier
Subjects
Online AccessGet full text

Cover

Loading…
More Information
Summary:An ideal solar thermal absorber has a sharp transition between high and low absorptance at the wavelength where the blackbody emissive power begins to exceed the solar irradiance. However, most real selective absorbers have a fairly broad transition, leading to both solar absorption and thermal emission losses. Here, we model, fabricate, and characterize a highly selective semiconductor-dielectric-metal (Ga0.46In0.54As – MgF2 – Ag) solar absorber with an extremely sharp transition from high to low absorptance. The thin semiconductor serves as a selective filter, absorbing photons with wavelengths shorter than the bandgap and transmitting those with longer wavelengths. The highly reflective dielectric-metal rear mirror allows the structure to have very low emittance for longer wavelengths. These characteristics provide the absorber with a measured solar absorptance >91% below the bandgap wavelength and infrared emittance <5% at 100 °C above the bandgap wavelength. This transition wavelength can be tuned by modifying the semiconductor composition, and modeling indicates that the absorber's optical properties should be stable at high temperatures, making the structure a good candidate for unconcentrated to highly concentrated solar thermal energy conversion. •Fabricated absorbers feature high solar absorptance and low thermal emittance.•A tunable, sharp transition wavelength is achieved with a GaInAs absorber layer.•Modeling indicates that optical properties should be stable at high temperatures.•Appropriate for a variety of applications from high to low optical concentration.
Bibliography:USDOE
USDOE National Renewable Energy Laboratory (NREL), Laboratory Directed Research and Development (LDRD) Program
AC36-08GO28308
NREL/JA-5900-81677
ISSN:0927-0248
1879-3398
DOI:10.1016/j.solmat.2022.111735