A monolithic integrated schottky diode for microwave mixers
A new type of planar microwave mixer diode was produced on GaAs by a self-aligned process, resulting in high precision and yield. Up to now only planar diodes made by the highly sophisticated process of double selective epitaxy met the requirements of mixer operation at X-band. The new design requir...
Saved in:
Published in | Solid-state electronics Vol. 18; no. 12; pp. 1095,IN3,1097 - 1096,IN4,1098 |
---|---|
Main Authors | , |
Format | Journal Article |
Language | English |
Published |
Elsevier Ltd
01.01.1975
|
Online Access | Get full text |
Cover
Loading…
Summary: | A new type of planar microwave mixer diode was produced on GaAs by a self-aligned process, resulting in high precision and yield. Up to now only planar diodes made by the highly sophisticated process of double selective epitaxy met the requirements of mixer operation at X-band. The new design requires only one epitaxial layer. It takes advantage of the inherent doping profile of the epitaxial layer instead of using two different layers. Microwave measurements showed that parasitic elements in the equivalent circuit can be neglected. This is due to the monolithic integration of the diode into a microstrip line which makes packaging superfluous. A cutoff frequency of 220 GHz was achieved.
Es wurde eine monolithisch integrierte Schottky-Diode entwickelt, die in einem selbstjustierenden Verfahren auf GaAs hergestellt wird. Bisher erreichten nur Dioden, die durch doppelte selektive Epitaxie hergestellt wurden, die für X-Band Mischer erforderliche Grenzfrequenz. Die neue Struktur benötigt nur eine einfache Epitaxieschicht und nutzt das natürliche Dotierungsprofil dieser Schicht aus, um hohe Grenzfrequenzen zu erreichen. Mikrowellenmessungen ergaben, daβ parasitäre Elemente durch die monolithische Integration der Diode in eine Streifenleitung vernachlässigbar sind. Bisher wurde eine Grenzfrequenz von 220 GHz erreicht. |
---|---|
Bibliography: | ObjectType-Article-2 SourceType-Scholarly Journals-1 ObjectType-Feature-1 content type line 23 |
ISSN: | 0038-1101 1879-2405 |
DOI: | 10.1016/0038-1101(75)90173-2 |