Modified Shockley Equation for GaInN-Based Light-Emitting Diodes: Origin of the Power- Efficiency Degradation Under High Current Injection
As an attempt to elucidate the origin of the power-efficiency (PE) degradation at high current injection for GaInN-based light-emitting diodes, the injection current is quantitatively separated to radiative and nonradiative current components as a function of applied voltage. It is found that the co...
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Published in | IEEE journal of quantum electronics Vol. 55; no. 4; pp. 1 - 11 |
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Main Authors | , , , , , , |
Format | Journal Article |
Language | English |
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New York
IEEE
01.08.2019
The Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
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Abstract | As an attempt to elucidate the origin of the power-efficiency (PE) degradation at high current injection for GaInN-based light-emitting diodes, the injection current is quantitatively separated to radiative and nonradiative current components as a function of applied voltage. It is found that the conventional Shockley equation for the current-voltage curve of a Si pn diode is not adequate for the LED since the carrier transport and recombination processes are quite different from those of the Si pn diode. Hence, we propose a diode equation for an LED where the radiative and nonradiative currents are separately expressed as a function of applied voltage. By analyzing the proposed diode equation, it is concluded that the PE degradation at high injection currents is due to the increase of the junction voltage and the decrease of the internal quantum efficiency at the same time. The phenomena can be understood by the insufficient recombination rate in the active quantum wells. |
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AbstractList | As an attempt to elucidate the origin of the power-efficiency (PE) degradation at high current injection for GaInN-based light-emitting diodes, the injection current is quantitatively separated to radiative and nonradiative current components as a function of applied voltage. It is found that the conventional Shockley equation for the current-voltage curve of a Si pn diode is not adequate for the LED since the carrier transport and recombination processes are quite different from those of the Si pn diode. Hence, we propose a diode equation for an LED where the radiative and nonradiative currents are separately expressed as a function of applied voltage. By analyzing the proposed diode equation, it is concluded that the PE degradation at high injection currents is due to the increase of the junction voltage and the decrease of the internal quantum efficiency at the same time. The phenomena can be understood by the insufficient recombination rate in the active quantum wells. |
Author | Jong-In Shim Kamiyama, Satoshi Dong-Soo Shin Takeuchi, Tetsuya Iwaya, Motoaki Akasaki, Isamu Dong-Pyo Han |
Author_xml | – sequence: 1 surname: Dong-Pyo Han fullname: Dong-Pyo Han email: han@meijo-u.ac.jp organization: Fac. of Sci. & Technol., Meijo Univ., Nagoya, Japan – sequence: 2 surname: Dong-Soo Shin fullname: Dong-Soo Shin organization: Dept. of Photonics & Nanoelectron., Hanyang Univ., Ansan, South Korea – sequence: 3 surname: Jong-In Shim fullname: Jong-In Shim organization: Dept. of Photonics & Nanoelectron., Hanyang Univ., Ansan, South Korea – sequence: 4 givenname: Satoshi surname: Kamiyama fullname: Kamiyama, Satoshi organization: Fac. of Sci. & Technol., Meijo Univ., Nagoya, Japan – sequence: 5 givenname: Tetsuya surname: Takeuchi fullname: Takeuchi, Tetsuya organization: Fac. of Sci. & Technol., Meijo Univ., Nagoya, Japan – sequence: 6 givenname: Motoaki surname: Iwaya fullname: Iwaya, Motoaki organization: Fac. of Sci. & Technol., Meijo Univ., Nagoya, Japan – sequence: 7 givenname: Isamu surname: Akasaki fullname: Akasaki, Isamu organization: Fac. of Sci. & Technol., Meijo Univ., Nagoya, Japan |
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Snippet | As an attempt to elucidate the origin of the power-efficiency (PE) degradation at high current injection for GaInN-based light-emitting diodes, the injection... |
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SubjectTerms | Carrier recombination Carrier transport Current injection Degradation Efficiency efficiency droop Electric potential High current Injection current internal quantum efficiency Light emitting diodes Mathematical model Organic light emitting diodes potential drop Power efficiency Quantum efficiency Quantum well devices Quantum wells Radiative recombination Semiconductor diodes Shockley equation Silicon |
Title | Modified Shockley Equation for GaInN-Based Light-Emitting Diodes: Origin of the Power- Efficiency Degradation Under High Current Injection |
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