Modified Shockley Equation for GaInN-Based Light-Emitting Diodes: Origin of the Power- Efficiency Degradation Under High Current Injection

As an attempt to elucidate the origin of the power-efficiency (PE) degradation at high current injection for GaInN-based light-emitting diodes, the injection current is quantitatively separated to radiative and nonradiative current components as a function of applied voltage. It is found that the co...

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Published inIEEE journal of quantum electronics Vol. 55; no. 4; pp. 1 - 11
Main Authors Dong-Pyo Han, Dong-Soo Shin, Jong-In Shim, Kamiyama, Satoshi, Takeuchi, Tetsuya, Iwaya, Motoaki, Akasaki, Isamu
Format Journal Article
LanguageEnglish
Published New York IEEE 01.08.2019
The Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subjects
Carrier recombination
Carrier transport
Current injection
Degradation
Efficiency
efficiency droop
Electric potential
High current
Injection current
internal quantum efficiency
Light emitting diodes
Mathematical model
Organic light emitting diodes
potential drop
Power efficiency
Quantum efficiency
Quantum well devices
Quantum wells
Radiative recombination
Semiconductor diodes
Shockley equation
Silicon
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Abstract As an attempt to elucidate the origin of the power-efficiency (PE) degradation at high current injection for GaInN-based light-emitting diodes, the injection current is quantitatively separated to radiative and nonradiative current components as a function of applied voltage. It is found that the conventional Shockley equation for the current-voltage curve of a Si pn diode is not adequate for the LED since the carrier transport and recombination processes are quite different from those of the Si pn diode. Hence, we propose a diode equation for an LED where the radiative and nonradiative currents are separately expressed as a function of applied voltage. By analyzing the proposed diode equation, it is concluded that the PE degradation at high injection currents is due to the increase of the junction voltage and the decrease of the internal quantum efficiency at the same time. The phenomena can be understood by the insufficient recombination rate in the active quantum wells.
AbstractList As an attempt to elucidate the origin of the power-efficiency (PE) degradation at high current injection for GaInN-based light-emitting diodes, the injection current is quantitatively separated to radiative and nonradiative current components as a function of applied voltage. It is found that the conventional Shockley equation for the current-voltage curve of a Si pn diode is not adequate for the LED since the carrier transport and recombination processes are quite different from those of the Si pn diode. Hence, we propose a diode equation for an LED where the radiative and nonradiative currents are separately expressed as a function of applied voltage. By analyzing the proposed diode equation, it is concluded that the PE degradation at high injection currents is due to the increase of the junction voltage and the decrease of the internal quantum efficiency at the same time. The phenomena can be understood by the insufficient recombination rate in the active quantum wells.
Author Jong-In Shim
Kamiyama, Satoshi
Dong-Soo Shin
Takeuchi, Tetsuya
Iwaya, Motoaki
Akasaki, Isamu
Dong-Pyo Han
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SubjectTerms Carrier recombination
Carrier transport
Current injection
Degradation
Efficiency
efficiency droop
Electric potential
High current
Injection current
internal quantum efficiency
Light emitting diodes
Mathematical model
Organic light emitting diodes
potential drop
Power efficiency
Quantum efficiency
Quantum well devices
Quantum wells
Radiative recombination
Semiconductor diodes
Shockley equation
Silicon
Title Modified Shockley Equation for GaInN-Based Light-Emitting Diodes: Origin of the Power- Efficiency Degradation Under High Current Injection
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