Response of sputtered titanium films on silicon to thermal oxidation

Rutile-TiO 2 films have been fabricated by thermal oxidation of titanium films, which were deposited on silicon (100) wafers using dc magnetron sputtering technique. The thermal oxidation response of titanium films with varying thickness from 450 nm to 1140 nm was investigated in the oxidation tempe...

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Published inSurface & coatings technology Vol. 195; no. 2; pp. 189 - 197
Main Authors Brama, Y.L., Sun, Y., Dangeti, S.R.K., Mujahid, M.
Format Journal Article
LanguageEnglish
Published Lausanne Elsevier B.V 31.05.2005
Elsevier
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Abstract Rutile-TiO 2 films have been fabricated by thermal oxidation of titanium films, which were deposited on silicon (100) wafers using dc magnetron sputtering technique. The thermal oxidation response of titanium films with varying thickness from 450 nm to 1140 nm was investigated in the oxidation temperature range of 600 °C to 900 °C, in terms of phase evolution, interface structure and film–substrate adhesion. It was found that the thickness of the titanium film significantly influenced its response to thermal oxidation treatment. Thinner films had better response to thermal oxidation at all investigated temperatures and times, such that an adherent rutile film could be produced on silicon. The critical thickness for achieving adherent oxidised films was approximately 570 nm. Film spallation was observed after oxidation of thicker films (i.e. 770 and 1140 nm). X-ray diffraction and electron probe microanalysis revealed that titanium silicides formed in the film–substrate interfacial region during the oxidation process. Microscratch tests showed that the adhesion of the film to the silicon substrate was deteriorated after thermal oxidation. The evolution of the rutile phase and the formation of brittle silicides at the interface were responsible for the observed reduction in adhesion strength.
AbstractList Rutile-TiO2 films have been fabricated by thermal oxidation of titanium films, which were deposited on silicon (100) wafers using dc magnetron sputtering technique. The thermal oxidation response of titanium films with varying thickness from 450 tim to 1140 nm was investigated in the oxidation temperature range of 600 DGC to 900 DGC, in terms of phase evolution, interface structure and film-substrate adhesion. It was found that the thickness of the titanium film significantly influenced its response to thermal oxidation treatment. Thinner films had better response to thermal oxidation at all investigated temperatures and times, such that an adherent rutile film could be produced on silicon. The critical thickness for achieving adherent oxidised films was approximately 570 nm. Film spallation was observed after oxidation of thicker films (i.e. 770 and 1140 nm). X-ray diffraction and electron probe microanalysis revealed that titanium silicides formed in the film-substrate interfacial region during the oxidation process. Microscratch tests showed that the adhesion of the film to the silicon substrate was deteriorated after thermal oxidation. The evolution of the rutile phase and the formation of brittle silicides at the interface were responsible for the observed reduction in adhesion strength.
Rutile-TiO 2 films have been fabricated by thermal oxidation of titanium films, which were deposited on silicon (100) wafers using dc magnetron sputtering technique. The thermal oxidation response of titanium films with varying thickness from 450 nm to 1140 nm was investigated in the oxidation temperature range of 600 °C to 900 °C, in terms of phase evolution, interface structure and film–substrate adhesion. It was found that the thickness of the titanium film significantly influenced its response to thermal oxidation treatment. Thinner films had better response to thermal oxidation at all investigated temperatures and times, such that an adherent rutile film could be produced on silicon. The critical thickness for achieving adherent oxidised films was approximately 570 nm. Film spallation was observed after oxidation of thicker films (i.e. 770 and 1140 nm). X-ray diffraction and electron probe microanalysis revealed that titanium silicides formed in the film–substrate interfacial region during the oxidation process. Microscratch tests showed that the adhesion of the film to the silicon substrate was deteriorated after thermal oxidation. The evolution of the rutile phase and the formation of brittle silicides at the interface were responsible for the observed reduction in adhesion strength.
Author Sun, Y.
Dangeti, S.R.K.
Mujahid, M.
Brama, Y.L.
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Issue 2
Keywords Titanium
Oxidation
Silicides
Titanium oxide
Rutile
Adhesion
Thin films
Titanium oxides
Sputtering
Language English
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Snippet Rutile-TiO 2 films have been fabricated by thermal oxidation of titanium films, which were deposited on silicon (100) wafers using dc magnetron sputtering...
Rutile-TiO2 films have been fabricated by thermal oxidation of titanium films, which were deposited on silicon (100) wafers using dc magnetron sputtering...
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SubjectTerms Adhesion
Applied sciences
Corrosion
Corrosion environments
Cross-disciplinary physics: materials science; rheology
Exact sciences and technology
Materials science
Metals. Metallurgy
Other topics in materials science
Oxidation
Physics
Rutile
Silicides
Titanium
Titanium oxide
Title Response of sputtered titanium films on silicon to thermal oxidation
URI https://dx.doi.org/10.1016/j.surfcoat.2004.11.016
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