Very high frequency plasma CVD of silicon oxide

• Published in: Surface & coatings technology Vol. 200; no. 1-4; pp. 364 - 367
• Main Authors: Schade, K., Stahr, F., Röhlecke, S., Steinke, O., Richter, R.H., Schopper, F., Heinzinger, K., Hartung, J.
• Format: Journal Article Conference Proceeding
• Language: English
• Published: Lausanne Elsevier B.V 01.10.2005; Elsevier
• Subjects: Applied sciences; Cross-disciplinary physics: materials science; rheology; Exact sciences and technology; Materials science; Metals. Metallurgy; Other topics in materials science; PECVD; Physics; Production techniques; Silicon dioxide; Surface treatment; VHF excitation; VHF excitation; PECVD; Equipment; Silicon dioxide; Plasma; Chemical vapor deposition; Surface treatment

Different principal types of plasma-enhanced chemical vapour deposition (PECVD) processes of silicon oxides are used: the conventional RF (13.56 MHz) PECVD, remote PECVD, inductive coupled high density plasma CVD and very high frequency (VHF) PECVD. Single-wafer chambers with parallel-plate PECVD sy...