Grain growth, agglomeration and interfacial reaction of copper interconnects

• Published in: Thin solid films Vol. 420; pp. 398 - 402
• Main Authors: Yang, Ching-Yu, Jeng, J.S, Chen, J.S
• Format: Journal Article
• Language: English
• Published: Elsevier B.V 02.12.2002
• Subjects: Agglomeration; Copper interconnect; Diffusion; TaN; TaN; Agglomeration; Diffusion; Copper interconnect

In this work, Cu(50 nm)/Ta(10 nm, or no Ta)/TaN(50 nm)/Ta(10 nm) metallization layers were deposited onto Si or SiO 2/Si substrates by magnetron sputtering. Samples were subsequently annealed at various temperatures ranging from 400 to 800 °C in vacuum. The sheet resistance, crystalline microstructu...