Low-temperature crosslinked soluble polyimide as a dielectric for organic thin-film transistors: enhanced electrical stability and performance
Abstract We have prepared a low-temperature cross-linked soluble polyimide (SPI) as a dielectric material for organic thin-film transistors (OTFTs) to improve their electrical stability. Two types of SPIs (DOCDA/6FHAB and 6FDA/6FHAB) were synthesized by a one-step polymerization process using 5-(2,5...
Saved in:
| Published in | JPhys materials Vol. 7; no. 1; pp. 15017 - 15026 |
|---|---|
| Main Authors | , , , , , , |
| Format | Journal Article |
| Language | English |
| Published |
Bristol
IOP Publishing
01.01.2024
|
| Subjects | |
| Online Access | Get full text |
Cover
Loading…
| Abstract | Abstract
We have prepared a low-temperature cross-linked soluble polyimide (SPI) as a dielectric material for organic thin-film transistors (OTFTs) to improve their electrical stability. Two types of SPIs (DOCDA/6FHAB and 6FDA/6FHAB) were synthesized by a one-step polymerization process using 5-(2,5-dioxytetrahydrofuryl)-3-methyl-3-cyclohexene-1,2-dicarboxylic anhydride (DOCDA) and hexafluoroisopropylidene diphthalic anhydride (6FDA) as the dianhydrides and 2,2-bis(3-amino-4-hydroxyphenyl)hexafluoropropane (6FHAB) as a diamine. To further enhance the electrical performance, the SPI thin films were crosslinked with methylated/ethylated (hydroxymethyl)benzoguanamine (HMBG) through a low temperature process at 160 °C. Crosslinking considerably improved the insulating properties, resulting in a substantial reduction in leakage current from 10
−7
A cm
−2
to 10
−9
A cm
−2
at 2.0 MV cm
−1
. When crosslinked SPIs were used as gate dielectrics in OTFTs, device stability and reliability, as measured by the off-current, threshold voltage, and hysteresis, improved significantly. Our results demonstrate the potential of crosslinked SPIs as effective gate dielectric materials for advanced organic thin-film transistors. |
|---|---|
| AbstractList | We have prepared a low-temperature cross-linked soluble polyimide (SPI) as a dielectric material for organic thin-film transistors (OTFTs) to improve their electrical stability. Two types of SPIs (DOCDA/6FHAB and 6FDA/6FHAB) were synthesized by a one-step polymerization process using 5-(2,5-dioxytetrahydrofuryl)-3-methyl-3-cyclohexene-1,2-dicarboxylic anhydride (DOCDA) and hexafluoroisopropylidene diphthalic anhydride (6FDA) as the dianhydrides and 2,2-bis(3-amino-4-hydroxyphenyl)hexafluoropropane (6FHAB) as a diamine. To further enhance the electrical performance, the SPI thin films were crosslinked with methylated/ethylated (hydroxymethyl)benzoguanamine (HMBG) through a low temperature process at 160 °C. Crosslinking considerably improved the insulating properties, resulting in a substantial reduction in leakage current from 10−7 A cm−2 to 10−9 A cm−2 at 2.0 MV cm−1. When crosslinked SPIs were used as gate dielectrics in OTFTs, device stability and reliability, as measured by the off-current, threshold voltage, and hysteresis, improved significantly. Our results demonstrate the potential of crosslinked SPIs as effective gate dielectric materials for advanced organic thin-film transistors. We have prepared a low-temperature cross-linked soluble polyimide (SPI) as a dielectric material for organic thin-film transistors (OTFTs) to improve their electrical stability. Two types of SPIs (DOCDA/6FHAB and 6FDA/6FHAB) were synthesized by a one-step polymerization process using 5-(2,5-dioxytetrahydrofuryl)-3-methyl-3-cyclohexene-1,2-dicarboxylic anhydride (DOCDA) and hexafluoroisopropylidene diphthalic anhydride (6FDA) as the dianhydrides and 2,2-bis(3-amino-4-hydroxyphenyl)hexafluoropropane (6FHAB) as a diamine. To further enhance the electrical performance, the SPI thin films were crosslinked with methylated/ethylated (hydroxymethyl)benzoguanamine (HMBG) through a low temperature process at 160 °C. Crosslinking considerably improved the insulating properties, resulting in a substantial reduction in leakage current from 10 ^−7 A cm ^−2 to 10 ^−9 A cm ^−2 at 2.0 MV cm ^−1 . When crosslinked SPIs were used as gate dielectrics in OTFTs, device stability and reliability, as measured by the off-current, threshold voltage, and hysteresis, improved significantly. Our results demonstrate the potential of crosslinked SPIs as effective gate dielectric materials for advanced organic thin-film transistors. Abstract We have prepared a low-temperature cross-linked soluble polyimide (SPI) as a dielectric material for organic thin-film transistors (OTFTs) to improve their electrical stability. Two types of SPIs (DOCDA/6FHAB and 6FDA/6FHAB) were synthesized by a one-step polymerization process using 5-(2,5-dioxytetrahydrofuryl)-3-methyl-3-cyclohexene-1,2-dicarboxylic anhydride (DOCDA) and hexafluoroisopropylidene diphthalic anhydride (6FDA) as the dianhydrides and 2,2-bis(3-amino-4-hydroxyphenyl)hexafluoropropane (6FHAB) as a diamine. To further enhance the electrical performance, the SPI thin films were crosslinked with methylated/ethylated (hydroxymethyl)benzoguanamine (HMBG) through a low temperature process at 160 °C. Crosslinking considerably improved the insulating properties, resulting in a substantial reduction in leakage current from 10 −7 A cm −2 to 10 −9 A cm −2 at 2.0 MV cm −1 . When crosslinked SPIs were used as gate dielectrics in OTFTs, device stability and reliability, as measured by the off-current, threshold voltage, and hysteresis, improved significantly. Our results demonstrate the potential of crosslinked SPIs as effective gate dielectric materials for advanced organic thin-film transistors. |
| Author | Kim, Cho Long Yoo, Sungmi Won, Jong Chan Kim, Yun Ho Ahn, Taek Kim, Kyeongmin Choi, Seong Hun |
| Author_xml | – sequence: 1 givenname: Sungmi surname: Yoo fullname: Yoo, Sungmi organization: Korea Research Institute of Chemical Technology Division of Advanced Materials, 141 Gajeong-ro, Yuseong-gu, Daejeon 34114, Republic of Korea – sequence: 2 givenname: Kyeongmin surname: Kim fullname: Kim, Kyeongmin organization: Kyungsung University Department of Applied Chemistry, 309 Suyeong-ro, Nam-gu, Busan 48434, Republic of Korea – sequence: 3 givenname: Cho Long orcidid: 0009-0002-9498-9077 surname: Kim fullname: Kim, Cho Long organization: Korea Research Institute of Chemical Technology Division of Advanced Materials, 141 Gajeong-ro, Yuseong-gu, Daejeon 34114, Republic of Korea – sequence: 4 givenname: Seong Hun surname: Choi fullname: Choi, Seong Hun organization: Advanced Materials and Chemical Engineering, KRICT school, University of Science and Technology , 217 Gajeong-ro, Yuseong-gu, Daejeon 34113, Republic of Korea – sequence: 5 givenname: Jong Chan orcidid: 0000-0003-3706-7359 surname: Won fullname: Won, Jong Chan organization: Advanced Materials and Chemical Engineering, KRICT school, University of Science and Technology , 217 Gajeong-ro, Yuseong-gu, Daejeon 34113, Republic of Korea – sequence: 6 givenname: Taek surname: Ahn fullname: Ahn, Taek organization: Kyungsung University Department of Applied Chemistry, 309 Suyeong-ro, Nam-gu, Busan 48434, Republic of Korea – sequence: 7 givenname: Yun Ho orcidid: 0000-0002-1722-5623 surname: Kim fullname: Kim, Yun Ho organization: Advanced Materials and Chemical Engineering, KRICT school, University of Science and Technology , 217 Gajeong-ro, Yuseong-gu, Daejeon 34113, Republic of Korea |
| BookMark | eNp9UU1v1DAUjFCRKEvvHC1xQ4T6I44TbqgqtNJKXOBsvTjP1ItjB9srtH-ivxlvFwoHxMlPo5l5zzPPm7MQAzbNS0bfMjoMl1wy2apejJcwMwT6pDl_hM7-mp81FznvKKVcjR3t1Hlzv40_2oLLignKPiExKebsXfiGM8nR7yePZI3-4BY3I4FMgMwOPZqSnCE2JhLTVwh1LncutNb5hZQEIbtcYsrvCIY7CKa6_RaBJ7nA5LwrBwJhJnV39VmOrBfNUws-48Wvd9N8-XD9-eqm3X76eHv1ftuaenZpVYdy4ExwwxRTHQy9oIL3OA19b1DgOFZQDhYZBdkrKVWvJjpbYbkYDB_Eprk9-c4RdnpNboF00BGcfgDqlzSk4oxHbSQDSQ0wYLxj2IOZLEVpLZ360XRd9Xp18lpT_L7HXPQu7lOo52s-csqFEjX7TUNPrIeAE9rHrYzqY4n62JI-tqRPJVbJm5PExfWP53_or_9B360LFExaaaYpk5QpvdYgfgK9-bB2 |
| Cites_doi | 10.1016/j.tsf.2010.08.009 10.1021/acsami.8b06653 10.1039/C2PY20632C 10.1016/j.solener.2019.11.048 10.1039/C8TC06249H 10.1002/pssa.200983714 10.1039/C5TC01474C 10.1021/acsami.6b14500 10.1021/acsaelm.2c00885 10.1002/adfm.200400486 10.1021/acsami.9b23318 10.1016/j.orgel.2016.03.027 10.1063/1.1946190 10.1038/s41467-018-04665-z 10.1016/j.reactfunctpolym.2016.04.021 10.1016/j.orgel.2019.01.043 10.1038/s41467-020-15181-4 10.1002/admi.201901364 10.1021/acsami.8b21130 10.1016/j.eurpolymj.2013.10.030 10.1007/BF03218923 10.1002/adfm.202111040 10.1007/s10853-016-0742-6 10.1016/j.eurpolymj.2022.111244 10.1039/C4TC00709C 10.1080/15421406.2019.1597530 10.1039/c3nr06517k 10.1080/15421406.2021.1946974 10.1002/adma.201801079 10.1039/C2CP43529B 10.1002/adfm.201404228 10.1016/j.orgel.2012.05.024 10.1039/C5CP06320E 10.1016/j.synthmet.2019.03.003 10.1088/1361-6641/ab23a8 10.1063/1.2093940 |
| ContentType | Journal Article |
| Copyright | 2024 The Author(s). Published by IOP Publishing Ltd 2024 The Author(s). Published by IOP Publishing Ltd. This work is published under http://creativecommons.org/licenses/by/4.0 (the “License”). Notwithstanding the ProQuest Terms and Conditions, you may use this content in accordance with the terms of the License. |
| Copyright_xml | – notice: 2024 The Author(s). Published by IOP Publishing Ltd – notice: 2024 The Author(s). Published by IOP Publishing Ltd. This work is published under http://creativecommons.org/licenses/by/4.0 (the “License”). Notwithstanding the ProQuest Terms and Conditions, you may use this content in accordance with the terms of the License. |
| DBID | O3W TSCCA AAYXX CITATION 8FE 8FG ABJCF ABUWG AFKRA AZQEC BENPR BGLVJ CCPQU D1I DWQXO HCIFZ KB. PDBOC PIMPY PQEST PQQKQ PQUKI PRINS DOA |
| DOI | 10.1088/2515-7639/ad1ea0 |
| DatabaseName | Open Access: IOP Publishing Free Content IOPscience (Open Access) CrossRef ProQuest SciTech Collection ProQuest Technology Collection Materials Science & Engineering Collection ProQuest Central (Alumni) ProQuest Central ProQuest Central Essentials AUTh Library subscriptions: ProQuest Central Technology Collection ProQuest One Community College ProQuest Materials Science Collection ProQuest Central SciTech Premium Collection Materials Science Database Materials Science Collection Publicly Available Content Database ProQuest One Academic Eastern Edition (DO NOT USE) ProQuest One Academic ProQuest One Academic UKI Edition ProQuest Central China DOAJ Directory of Open Access Journals |
| DatabaseTitle | CrossRef Publicly Available Content Database ProQuest Materials Science Collection Technology Collection ProQuest Central Essentials ProQuest One Academic Eastern Edition Materials Science Collection ProQuest Central (Alumni Edition) SciTech Premium Collection ProQuest One Community College ProQuest Technology Collection ProQuest SciTech Collection ProQuest Central China ProQuest Central ProQuest One Academic UKI Edition ProQuest Central Korea Materials Science & Engineering Collection Materials Science Database ProQuest One Academic |
| DatabaseTitleList | Publicly Available Content Database CrossRef |
| Database_xml | – sequence: 1 dbid: DOA name: Open Access: DOAJ - Directory of Open Access Journals url: https://www.doaj.org/ sourceTypes: Open Website – sequence: 2 dbid: O3W name: Open Access: IOP Publishing Free Content url: http://iopscience.iop.org/ sourceTypes: Enrichment Source Publisher – sequence: 3 dbid: 8FG name: ProQuest Technology Collection url: https://search.proquest.com/technologycollection1 sourceTypes: Aggregation Database |
| DeliveryMethod | fulltext_linktorsrc |
| EISSN | 2515-7639 |
| ExternalDocumentID | oai_doaj_org_article_c51a50ca1a1241e6acbf0e5ff0b69c44 10_1088_2515_7639_ad1ea0 jpmaterad1ea0 |
| GrantInformation_xml | – fundername: National Research Foundation of Korea grantid: NRF-2019R1F1A1060813 – fundername: Ministry of Trade, Industry and Energy, Korea grantid: KEIT-20009826; KEIT-20014103 – fundername: KRICT grantid: KS2321-20 |
| GroupedDBID | ABJCF AFKRA ALMA_UNASSIGNED_HOLDINGS BENPR BGLVJ CCPQU EBS EJD GROUPED_DOAJ HCIFZ IOP KB. M~E O3W OK1 PDBOC PIMPY TSCCA AAYXX CITATION 8FE 8FG ABUWG AZQEC D1I DWQXO PQEST PQQKQ PQUKI PRINS |
| ID | FETCH-LOGICAL-c404t-74e582132c17174a8630326eb866ce3e9974a58fe10a56755767b0df3f238c283 |
| IEDL.DBID | BENPR |
| ISSN | 2515-7639 |
| IngestDate | Tue Oct 22 15:14:39 EDT 2024 Thu Oct 10 19:37:08 EDT 2024 Fri Aug 23 01:57:24 EDT 2024 Tue Aug 20 22:14:51 EDT 2024 Sun Aug 18 15:40:27 EDT 2024 |
| IsDoiOpenAccess | true |
| IsOpenAccess | true |
| IsPeerReviewed | true |
| IsScholarly | true |
| Issue | 1 |
| Language | English |
| License | Original content from this work may be used under the terms of the Creative Commons Attribution 4.0 license. Any further distribution of this work must maintain attribution to the author(s) and the title of the work, journal citation and DOI. |
| LinkModel | DirectLink |
| MergedId | FETCHMERGED-LOGICAL-c404t-74e582132c17174a8630326eb866ce3e9974a58fe10a56755767b0df3f238c283 |
| Notes | JPMATER-100910.R2 |
| ORCID | 0000-0003-3706-7359 0009-0002-9498-9077 0000-0002-1722-5623 |
| OpenAccessLink | https://www.proquest.com/docview/2920237376?pq-origsite=%requestingapplication% |
| PQID | 2920237376 |
| PQPubID | 4916449 |
| PageCount | 10 |
| ParticipantIDs | crossref_primary_10_1088_2515_7639_ad1ea0 proquest_journals_2920237376 doaj_primary_oai_doaj_org_article_c51a50ca1a1241e6acbf0e5ff0b69c44 iop_journals_10_1088_2515_7639_ad1ea0 |
| PublicationCentury | 2000 |
| PublicationDate | 20240101 2024-01-01 |
| PublicationDateYYYYMMDD | 2024-01-01 |
| PublicationDate_xml | – month: 1 year: 2024 text: 20240101 day: 01 |
| PublicationDecade | 2020 |
| PublicationPlace | Bristol |
| PublicationPlace_xml | – name: Bristol |
| PublicationTitle | JPhys materials |
| PublicationTitleAbbrev | JPhysMaterials |
| PublicationTitleAlternate | J. Phys. Mater |
| PublicationYear | 2024 |
| Publisher | IOP Publishing |
| Publisher_xml | – name: IOP Publishing |
| References | Zhu (jpmaterad1ea0bib19) 2017; 52 Jang (jpmaterad1ea0bib21) 2012; 13 Park (jpmaterad1ea0bib10) 2022; 4 Vicca (jpmaterad1ea0bib23) 2010; 519 Paterson (jpmaterad1ea0bib1) 2018; 30 Zhang (jpmaterad1ea0bib6) 2019; 7 Min (jpmaterad1ea0bib17) 2020; 12 Kim (jpmaterad1ea0bib24) 2018; 676 Park (jpmaterad1ea0bib25) 2018; 10 Park (jpmaterad1ea0bib9) 2019; 68 Damaceanu (jpmaterad1ea0bib16) 2014; 50 Wee (jpmaterad1ea0bib13) 2014; 2 Lee (jpmaterad1ea0bib22) 2021; 728 Lee (jpmaterad1ea0bib20) 2014; 6 Kurosawa (jpmaterad1ea0bib11) 2013; 4 Kim (jpmaterad1ea0bib36) 2009; 17 Sun (jpmaterad1ea0bib5) 2019; 250 Nayak (jpmaterad1ea0bib27) 2010; 207 Yoo (jpmaterad1ea0bib30) 2016; 33 Yi (jpmaterad1ea0bib12) 2020; 195 Kim (jpmaterad1ea0bib3) 2019; 11 Coskun (jpmaterad1ea0bib28) 2020; 7 Tsai (jpmaterad1ea0bib15) 2016; 108 Kim (jpmaterad1ea0bib2) 2020; 11 Kwon (jpmaterad1ea0bib32) 2017; 9 Choe (jpmaterad1ea0bib33) 2016; 18 Stadlober (jpmaterad1ea0bib35) 2005; 86 Park (jpmaterad1ea0bib4) 2019; 34 Huang (jpmaterad1ea0bib7) 2015; 25 Yang (jpmaterad1ea0bib34) 2005; 15 Wang (jpmaterad1ea0bib18) 2022; 172 Jang (jpmaterad1ea0bib29) 2013; 15 Ahn (jpmaterad1ea0bib14) 2022; 32 Sun (jpmaterad1ea0bib31) 2015; 3 Ji (jpmaterad1ea0bib8) 2018; 9 Jang (jpmaterad1ea0bib26) 2005; 87 |
| References_xml | – volume: 519 start-page: 391 year: 2010 ident: jpmaterad1ea0bib23 article-title: A low-temperature-cross-linked poly(4-vinylphenol) gate-dielectric for organic thin film transistors publication-title: Thin Solid Films doi: 10.1016/j.tsf.2010.08.009 contributor: fullname: Vicca – volume: 10 start-page: 24055 year: 2018 ident: jpmaterad1ea0bib25 article-title: Control of concentration of nonhydrogen-bonded hydroxyl groups in polymer dielectrics for organic field-effect transistors with operational stability publication-title: ACS Appl. Mater. Interfaces doi: 10.1021/acsami.8b06653 contributor: fullname: Park – volume: 4 start-page: 16 year: 2013 ident: jpmaterad1ea0bib11 article-title: Polyimide memory: a pithy guideline for future applications publication-title: Polym. Chem. doi: 10.1039/C2PY20632C contributor: fullname: Kurosawa – volume: 195 start-page: 340 year: 2020 ident: jpmaterad1ea0bib12 article-title: High-temperature-resistant and colorless polyimide: preparations, properties, and applications publication-title: Sol. Energy doi: 10.1016/j.solener.2019.11.048 contributor: fullname: Yi – volume: 7 start-page: 4004 year: 2019 ident: jpmaterad1ea0bib6 article-title: Two-dimensional organic-inorganic hybrid perovskite field-effect transistors with polymers as bottom-gate dielectrics publication-title: J. Mater. Chem. C doi: 10.1039/C8TC06249H contributor: fullname: Zhang – volume: 207 start-page: 1664 year: 2010 ident: jpmaterad1ea0bib27 article-title: Performance of top-gate thin film transistors with solution processed ZnO channel layer and PVP gate dielectric publication-title: Phys. Status Solidi a doi: 10.1002/pssa.200983714 contributor: fullname: Nayak – volume: 3 start-page: 7062 year: 2015 ident: jpmaterad1ea0bib31 article-title: High mobility flexible polymer thin-film transistors with an octadecyl-phosphonic acid treated electrochemically oxidized alumina gate insulator publication-title: J. Mater. Chem. C doi: 10.1039/C5TC01474C contributor: fullname: Sun – volume: 9 start-page: 5366 year: 2017 ident: jpmaterad1ea0bib32 article-title: Solvent-free processable and photo-patternable hybrid gate dielectric for flexible top-gate organic field-effect transistors publication-title: ACS Appl. Mater. Interfaces doi: 10.1021/acsami.6b14500 contributor: fullname: Kwon – volume: 4 start-page: 4677 year: 2022 ident: jpmaterad1ea0bib10 article-title: Reduction of the error in the electrical characterization of organic field-effect transistors based on donor–acceptor polymer semiconductors publication-title: ACS Appl. Electron. Mater. doi: 10.1021/acsaelm.2c00885 contributor: fullname: Park – volume: 15 start-page: 1806 year: 2005 ident: jpmaterad1ea0bib34 article-title: The effect of gate-dielectric surface energy on pentacene morphology and organic field-effect transistor characteristics publication-title: Adv. Funct. Mater. doi: 10.1002/adfm.200400486 contributor: fullname: Yang – volume: 12 start-page: 18739 year: 2020 ident: jpmaterad1ea0bib17 article-title: Transparent and colorless polyimides containing multiple trifluoromethyl groups as gate insulators for flexible organic transistors with superior electrical stability publication-title: ACS Appl. Mater. Interfaces doi: 10.1021/acsami.9b23318 contributor: fullname: Min – volume: 33 start-page: 263 year: 2016 ident: jpmaterad1ea0bib30 article-title: One-pot surface modification of poly(ethylene-alt-maleic anhydride) gate insulators for low-voltage DNTT thin-film transistors publication-title: Org. Electron. doi: 10.1016/j.orgel.2016.03.027 contributor: fullname: Yoo – volume: 86 year: 2005 ident: jpmaterad1ea0bib35 article-title: High-mobility pentacene organic field-effect transistors with a high-dielectric-constant fluorinated polymer film gate dielectric publication-title: Appl. Phys. Lett. doi: 10.1063/1.1946190 contributor: fullname: Stadlober – volume: 9 start-page: 2339 year: 2018 ident: jpmaterad1ea0bib8 article-title: Copolymer dielectrics with balanced chain-packing density and surface polarity for high-performance flexible organic electronics publication-title: Nat. Commun. doi: 10.1038/s41467-018-04665-z contributor: fullname: Ji – volume: 108 start-page: 2 year: 2016 ident: jpmaterad1ea0bib15 article-title: Highly transparent polyimide hybrids for optoelectronic applications publication-title: React. Funct. Polym. doi: 10.1016/j.reactfunctpolym.2016.04.021 contributor: fullname: Tsai – volume: 68 start-page: 70 year: 2019 ident: jpmaterad1ea0bib9 article-title: Flexible and stable organic field-effect transistors using low-temperature solution-processed polyimide gate dielectrics publication-title: Org. Electron. doi: 10.1016/j.orgel.2019.01.043 contributor: fullname: Park – volume: 11 start-page: 1520 year: 2020 ident: jpmaterad1ea0bib2 article-title: Universal three-dimensional crosslinker for all-photopatterned electronics publication-title: Nat. Commun. doi: 10.1038/s41467-020-15181-4 contributor: fullname: Kim – volume: 7 year: 2020 ident: jpmaterad1ea0bib28 article-title: Cofunction of protons as dopant and reactant activate the electrocatalytic hydrogen evolution in emeraldine-polyguanine publication-title: Adv. Mater. Interfaces doi: 10.1002/admi.201901364 contributor: fullname: Coskun – volume: 11 start-page: 13481 year: 2019 ident: jpmaterad1ea0bib3 article-title: Facile and microcontrolled blade coating of organic semiconductor blends for uniaxial crystal alignment and reliable flexible organic field-effect transistors publication-title: ACS Appl. Mater. Interfaces doi: 10.1021/acsami.8b21130 contributor: fullname: Kim – volume: 50 start-page: 200 year: 2014 ident: jpmaterad1ea0bib16 article-title: Highly transparent and hydrophobic fluorinated polyimide films with ortho-kink structure publication-title: Eur. Polym. J. doi: 10.1016/j.eurpolymj.2013.10.030 contributor: fullname: Damaceanu – volume: 17 start-page: 646 year: 2009 ident: jpmaterad1ea0bib36 article-title: Synthesis of fluorinated polymer gate dielectric with improved wetting property and its application to organic field-effect transistors publication-title: Macromol. Res. doi: 10.1007/BF03218923 contributor: fullname: Kim – volume: 32 year: 2022 ident: jpmaterad1ea0bib14 article-title: Highly transparent, colorless optical film with outstanding mechanical strength and folding reliability using mismatched charge-transfer complex intensification publication-title: Adv. Funct. Mater. doi: 10.1002/adfm.202111040 contributor: fullname: Ahn – volume: 52 start-page: 5048 year: 2017 ident: jpmaterad1ea0bib19 article-title: Improved dielectric properties and energy storage density of poly(vinylidene fluoride-co-trifluoroethylene-co-chlorotrifluoroethylene) composite films with aromatic polythiourea publication-title: J. Mater. Sci. doi: 10.1007/s10853-016-0742-6 contributor: fullname: Zhu – volume: 172 year: 2022 ident: jpmaterad1ea0bib18 article-title: Influence of crosslink density on thermal, mechanical and dielectric properties of cross-linked fluorinated poly(aryl ether)s publication-title: Eur. Polym. J. doi: 10.1016/j.eurpolymj.2022.111244 contributor: fullname: Wang – volume: 2 start-page: 6395 year: 2014 ident: jpmaterad1ea0bib13 article-title: Poly(imide-benzoxazole) gate insulators with high thermal resistance for solution-processed flexible indium-zinc oxide thin-film transistors publication-title: J. Mater. Chem. C doi: 10.1039/C4TC00709C contributor: fullname: Wee – volume: 676 start-page: 141 year: 2018 ident: jpmaterad1ea0bib24 article-title: Photo-crosslinkable and low-temperature processable polyimide gate insulator for pentacene thin-film transistors publication-title: Mol. Cryst. Liq. Cryst. doi: 10.1080/15421406.2019.1597530 contributor: fullname: Kim – volume: 6 start-page: 3830 year: 2014 ident: jpmaterad1ea0bib20 article-title: Poly-4-vinylphenol and poly(melamine-co-formaldehyde)-based graphene passivation method for flexible, wearable and transparent electronics publication-title: Nanoscale doi: 10.1039/c3nr06517k contributor: fullname: Lee – volume: 728 start-page: 26 year: 2021 ident: jpmaterad1ea0bib22 article-title: Synthesis and characterization of a perfluorocyclobutane-containing cross-linked polyimide gate insulator for thin film transistor publication-title: Mol. Cryst. Liq. Cryst. doi: 10.1080/15421406.2021.1946974 contributor: fullname: Lee – volume: 30 year: 2018 ident: jpmaterad1ea0bib1 article-title: Recent progress in high-mobility organic transistors: a reality check publication-title: Adv. Mater. doi: 10.1002/adma.201801079 contributor: fullname: Paterson – volume: 15 start-page: 950 year: 2013 ident: jpmaterad1ea0bib29 article-title: Surface modification of polyimide gate insulators for solution-processed 2,7-didecyl[1]benzothieno[3,2-b][1]benzothiophene (C10-BTBT) thin-film transistors publication-title: Phys. Chem. Chem. Phys. doi: 10.1039/C2CP43529B contributor: fullname: Jang – volume: 25 start-page: 3745 year: 2015 ident: jpmaterad1ea0bib7 article-title: A high-capacitance salt-free dielectric for self-healable, printable, and flexible organic field effect transistors and chemical sensor publication-title: Adv. Funct. Mater. doi: 10.1002/adfm.201404228 contributor: fullname: Huang – volume: 13 start-page: 1665 year: 2012 ident: jpmaterad1ea0bib21 article-title: Direct photo-patternable, low-temperature processable polyimide gate insulator for pentacene thin-film transistors publication-title: Org. Electron. doi: 10.1016/j.orgel.2012.05.024 contributor: fullname: Jang – volume: 18 start-page: 8522 year: 2016 ident: jpmaterad1ea0bib33 article-title: Surface grafting of octylamine onto poly(ethylene-alt-maleic anhydride) gate insulators for low-voltage DNTT thin-film transistors publication-title: Phys. Chem. Chem. Phys. doi: 10.1039/C5CP06320E contributor: fullname: Choe – volume: 250 start-page: 73 year: 2019 ident: jpmaterad1ea0bib5 article-title: Thermally cross-linked polyvinyl alcohol as gate dielectrics for solution processing organic field-effect transistors publication-title: Synth. Met. doi: 10.1016/j.synthmet.2019.03.003 contributor: fullname: Sun – volume: 34 year: 2019 ident: jpmaterad1ea0bib4 article-title: Effect of photoresponsive polymer gate insulators on performance of poly(4-vinylphenol)-based organic phototransistors publication-title: Semicond. Sci. Technol. doi: 10.1088/1361-6641/ab23a8 contributor: fullname: Park – volume: 87 year: 2005 ident: jpmaterad1ea0bib26 article-title: Influence of the dielectric constant of a polyvinyl phenol insulator on the field-effect mobility of a pentacene-based thin-film transistor publication-title: Appl. Phys. Lett. doi: 10.1063/1.2093940 contributor: fullname: Jang |
| SSID | ssj0002794047 |
| Score | 2.2969763 |
| Snippet | Abstract
We have prepared a low-temperature cross-linked soluble polyimide (SPI) as a dielectric material for organic thin-film transistors (OTFTs) to improve... We have prepared a low-temperature cross-linked soluble polyimide (SPI) as a dielectric material for organic thin-film transistors (OTFTs) to improve their... |
| SourceID | doaj proquest crossref iop |
| SourceType | Open Website Aggregation Database Enrichment Source Publisher |
| StartPage | 15017 |
| SubjectTerms | cross-linking network Crosslinking Diamines Dicarboxylic anhydride Dielectrics Insulation Leakage current Low temperature mobility polyimide polymer dielectric Semiconductor devices Stability Thin film transistors Threshold voltage |
| SummonAdditionalLinks | – databaseName: DOAJ Directory of Open Access Journals dbid: DOA link: http://utb.summon.serialssolutions.com/2.0.0/link/0/eLvHCXMwrV3NaxUxEA_SkxdRVHxaJaAePCwv2c3HxpuKpYh4stBbyMeEbnndt_Rtkf4T_s1Okn22RdCL1yWbDTOT_GZ2Jr8h5E2rZBcAPTeT737g6acbo6RuOChIXRe9c6XK95s6PhFfTuXprVZfuSas0gNXwa2D5E6y4LhDJMIZXPCJgUyJeWWCqEygzNwKps5LOs0IJvSSl8SdtEYclw1uJrN2kYNjd3Co0PUjugzb6Y8zuQDN0UPyYPEQ6Ye6skfkHoyPyc-v2x9NppFaOJBpmTVnXyHSbD5-A3Tabq6HiyECdTvqaBxqj5shUPRMae3fFOh8NoxNGjYXdM44VWhCdu8pjGelGIDuX8I1oOdYamevqRsjnW7uGDwhJ0efv386bpZWCk1AOcyNFpBvxHZt4KgO4XqF0NUq8L1SATowGFY42SfgzEmMITAK0Z7F1CWE9IAuyFNyMG5HeEYog8yRF3wbRY6uuBfGeR11NC52TpgVebcXrJ0qY4Ytme6-t1kJNivBViWsyMcs-d_jMtd1eYAisYsF2H9ZwIq8Rb3ZZe_t_vKx13fGnU8YE8Cl1Zbb_N-HazvFtCKHe_3fDM0tvdpO42H8_H-s-AW5j_OJ-ifnkBzMl1fwEn2b2b8qZvwLTsf4ZQ priority: 102 providerName: Directory of Open Access Journals – databaseName: Institute of Physics (IOP) Publishing Journals dbid: IOP link: http://utb.summon.serialssolutions.com/2.0.0/link/0/eLvHCXMwnV1Lb9QwELaqcuHCQ4BYKMgScOCQbZz4kcCpRVQFIeBApR6QLD_GamCbjbqpUPkR_GbGdnarAkKI2yqyZe88PDP2zDeEPK2kqB2g59bG2g88_VTRSqEKBhJCXXtrTMryfS8Pj_jbY3G8RV5uamGWw3T0z_FnBgrOJJwS4ppdtMiiQLVod41nYDBev1ajqkSRfvPh4-aCpUJJK7manib_NPGKKUqI_WhgcNXfjuVkaw5uks_rXeYUk6_z89HO3fdfABz_82_cIjcmH5Tu5aG3yRb0d8iPd8tvRQSqmlCWadp0fN8FT6OA2gXQYbm46E47D9SsqKG-y110OkfR96W5Q5Sj40nXF6FbnNIxWsIERLJ6QaE_SekGdD0J94C-acrOvaCm93S4rGK4S44OXn96dVhMzRoKh2QeC8Uh1tzWlWPIcG4aicaxkmAbKR3U0GLgYkQTgJVGYJSCcY6ypQ91QKfBoZNzj2z3yx7uE1pCROFztvI8xm_M8tZY5ZVvja8Nb2fk-ZpvesiYHDq9pTeNjlTVkao6U3VG9iNjN-Mimnb6gCTRE0u0E8yI0hlm0NtBKTXOhhJECKWVreN8Rp4hF_Wk3au_LPbkyrgvA0YdcKaVZjreLDGlBx9mZGctXpdDY9OwqlZ43D_4x8Uekus4hefroB2yPZ6dwyN0kEb7OCnCT-RuDO4 priority: 102 providerName: IOP Publishing |
| Title | Low-temperature crosslinked soluble polyimide as a dielectric for organic thin-film transistors: enhanced electrical stability and performance |
| URI | https://iopscience.iop.org/article/10.1088/2515-7639/ad1ea0 https://www.proquest.com/docview/2920237376 https://doaj.org/article/c51a50ca1a1241e6acbf0e5ff0b69c44 |
| Volume | 7 |
| hasFullText | 1 |
| inHoldings | 1 |
| isFullTextHit | |
| isPrint | |
| link | http://utb.summon.serialssolutions.com/2.0.0/link/0/eLvHCXMwfR1Na9RAdLDbixexqLjaLgPqwUPYTDKTSXqRtnStIm0Ri70N8_FCI9skdiPSP-Fv7pvJbJci9BJCMvngfX_Ne4S8zwqRW0DLrfJ7P1D6yaQqhEwYFFDnuTNahyrf0-Lkgn-9FJcx4LaKZZVrmRgEteusj5HP_VSlLJfID5_634mfGuWzq3GExhbZztBTyCZk-_D49Pz7fZQlQ3JLuYz5SeSoOepzkSBTVXPtGOj0gT4KbftRyzRd_59sDgpn8Zw8i5YiPRhRu0OeQPuC_PvW_U18O6nYC5mGt_osLDjqycgsgfbd8ra5bhxQvaKaumacddNYihYqHec4WTpcNW1SN8trOnh9FdqFrPYptFehKICuH8J_QAsy1NDeUt062m_2GrwkF4vjH0cnSRypkFiEw5BIDn5nbJ5ZhmjhuixQhWUFmLIoLORQoXuhRVkDS7VAXwK9EWlSV-c1qnaLpsgrMmm7Fl4TmoLvlWdN5rj3spjhlTbSSVdpl2teTcnHNWBVP3bOUCHjXZbKI0F5JKgRCVNy6CF_v873vA4XECQqspCygmmRWs002iRIS9qaOgVR16kpKsv5lHxAvKnIg6tHPvbuwbpfPfoGcKOkYsrHf5hUvaunZHeN_83SDRG-efz2W_IUT_kYq9klk-HmD-yh9TKYGdkqF59nkVBnIQaAxy9n53g8y3_eAc9H9Bs |
| link.rule.ids | 315,783,787,867,2109,12779,21402,27938,27939,33387,33758,38879,38904,43614,43819,53856,53882 |
| linkProvider | ProQuest |
| linkToHtml | http://utb.summon.serialssolutions.com/2.0.0/link/0/eLvHCXMwfR3JbtQw1IJygAsCAWKggCXgwCGaOHbshAsCxDDA0FMr9WZ5eVFTTZPQSVX1J_hmnh1PRxVSr4mz6O37I-RdIUvuAC23OvR-oPRTWS1LlTGQ0HDurTGxyvdALo_Ez-PyOAXcNqmscisTo6D2vQsx8nnYqlRwhfzwafiTha1RIbuaVmjcJfcER0UTOsUX369jLAUSWy5Uyk4iP81Rm5cZslQ9N56ByW9oozi0H3VM2w__SeaobhaPyMNkJ9LPE2IfkzvQPSF_V_1lFoZJpUnINL415GDB00BEdg106NdX7VnrgZoNNdS306ab1lG0T-m0xcnR8aTtsqZdn9ExaKs4LGTzkUJ3EksC6PYh_Ae0H2MF7RU1nafDrtPgKTlafDv8uszSQoXMIRzGTAkIfbG8cAyRIkwlUYEVEmwlpQMONToXpqwaYLkp0ZNAX0TZ3De8QcXu0BB5Rva6voPnhOYQJuU5W3gRfCxmRW2s8srXxnMj6hn5sAWsHqa5GTrmu6tKByTogAQ9IWFGvgTIX58LE6_jBQSJTgykXclMmTvDDFokSEnG2SaHsmlyK2snxIy8R7zpxIGbWz729sa50wE9AzjXSjMdoj9M6cE3M7K_xf_u6I4EX9x--w25vzz8vdKrHwe_XpIHeFlMUZt9sjeeX8ArtGNG-zoS6z-JDPHI |
| linkToPdf | http://utb.summon.serialssolutions.com/2.0.0/link/0/eLvHCXMwjV1Lb9QwELagSIgLogLEQqGWgAOHsEn8SrhBYVWgKhyo6M3yY6wGbbNRNwj1T_Q3M3a8rSoQ4hZFdhzNjOdhz3xDyItaCuYAPbc21n6g9lNFK4UqKpAQGPPWmJTleyj3j_inY3Gc-5ymWpjVkFX_a3ycgIInEuaEuGaOFlkUuC3aufEVmHI--HCT3MKd28QWBl_Y98tDlhqlreQqX0_-bfI1c5RQ-9HI4Mp_qOZkbxb3yN3sKNK3029tkxvQ3ycXB6tfRUSTylDINH01XsKCp1GK7BLosFqed6edB2rW1FDfTa1uOkfRQaVTGydHx5OuL0K3PKVjNFcJLWT9hkJ_knIC6GYS_gM6kCmF9pya3tPhqtTgATlafPi2t1_kjgqFQzqMheIQC2NZ7SrkCjeNRAtWS7CNlA4YtBhdGNEEqEojMJTAYETZ0gcW0LI79EQekq1-1cMjQkuIUHnO1p7HIKuyvDVWeeVb45nh7Yy82hBWDxNwhk4X3k2jIxN0ZIKemDAj7yLlL8dFyOv0AkmiM_u1E5URpTOVQZcERck4G0oQIZRWto7zGXmJfNN5C67_sdjza-N-DBgawJlWutLx-KdSGgVqRnY2_L8aGjt71UyhTn78n4vtkttf3y_0wcfDz0_IHZzNp-ObHbI1nv2Ep-jQjPZZEtrfSxLxbg |
| openUrl | ctx_ver=Z39.88-2004&ctx_enc=info%3Aofi%2Fenc%3AUTF-8&rfr_id=info%3Asid%2Fsummon.serialssolutions.com&rft_val_fmt=info%3Aofi%2Ffmt%3Akev%3Amtx%3Ajournal&rft.genre=article&rft.atitle=Low-temperature+crosslinked+soluble+polyimide+as+a+dielectric+for+organic+thin-film+transistors%3A+enhanced+electrical+stability+and+performance&rft.jtitle=JPhys+materials&rft.au=Yoo%2C+Sungmi&rft.au=Kim%2C+Kyeongmin&rft.au=Kim%2C+Cho+Long&rft.au=Choi%2C+Seong+Hun&rft.date=2024-01-01&rft.issn=2515-7639&rft.eissn=2515-7639&rft.volume=7&rft.issue=1&rft.spage=15017&rft_id=info:doi/10.1088%2F2515-7639%2Fad1ea0&rft.externalDBID=n%2Fa&rft.externalDocID=10_1088_2515_7639_ad1ea0 |
| thumbnail_l | http://covers-cdn.summon.serialssolutions.com/index.aspx?isbn=/lc.gif&issn=2515-7639&client=summon |
| thumbnail_m | http://covers-cdn.summon.serialssolutions.com/index.aspx?isbn=/mc.gif&issn=2515-7639&client=summon |
| thumbnail_s | http://covers-cdn.summon.serialssolutions.com/index.aspx?isbn=/sc.gif&issn=2515-7639&client=summon |