Time-resolved photoemission electron microscopy of semiconductor interfaces

• Published in: Progress in surface science Vol. 99; no. 3; p. 100745
• Main Authors: Kosar, Sofiia, Dani, Keshav M.
• Format: Journal Article
• Language: English
• Published: Elsevier Ltd 01.09.2024
• Subjects: Nanoscale resolution; Photoemission electron microscopy; Semiconductor interfaces; Time-resolved photoemission electron microscopy; Ultrafast dynamics; Ultrafast dynamics; Semiconductor interfaces; Time-resolved photoemission electron microscopy; Nanoscale resolution; Photoemission electron microscopy
• ISSN: 0079-6816
• DOI: 10.1016/j.progsurf.2024.100745

Semiconductor interfaces are at the heart of the functionality of many devices for opto-electronic applications. At these interfaces, the importance of ultrafast dynamics – processes that occur on sub-nanosecond timescales – has been long understood. While these ultrafast spectroscopic studies have revealed important information, there remains a rich array of physics that is hidden within sub-micrometer length scales when using spatially-averaged techniques. However, powerful tools that could access material dynamics in semiconductors simultaneously at ultrafast time- and sub-micrometer length scales are challenging to implement. Here, we review recent developments in time-resolved photoemission electron microscopy as a technique to study ultrafast electron dynamics at semiconductor interfaces at the nanoscale. In particular, we review recent work in traditional semiconductor interfaces and heterojunctions, low-dimensional materials, and semiconductors for photovoltaic applications.