Preparation and characterization of electrodeposited in-doped CdTe semiconductor films
In‐doped n‐CdTe thin films have been electrodeposited at −0.35 V versus Ag/AgCl from a nitric acid solution of pH 1 containing 0.05 mol/dm3(M)Cd(NO3)2, 0.5 mM TeO2, and various concentrations of In(NO3)3. Deposited films were annealed at 350°C under N2 flow. The films were characterized with X‐ray d...
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| Published in | Electrical engineering in Japan Vol. 164; no. 3; pp. 12 - 18 |
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| Main Authors | , , , , , , , |
| Format | Journal Article |
| Language | English |
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| Abstract | In‐doped n‐CdTe thin films have been electrodeposited at −0.35 V versus Ag/AgCl from a nitric acid solution of pH 1 containing 0.05 mol/dm3(M)Cd(NO3)2, 0.5 mM TeO2, and various concentrations of In(NO3)3. Deposited films were annealed at 350°C under N2 flow. The films were characterized with X‐ray diffraction, energy‐dispersive X‐ray spectroscopy, scanning electron microscopy, and a reflectance meter. The conductivity and the carrier concentration of the films were measured using the van der Pauw method and Hall effect measurement at room temperature. This is the first study to investigate the effect of the In(NO3)3 concentration on the composition, the crystallinity, and the electric properties of In‐doped CdTe films prepared by electrodeposition. The conductivity of the CdTe films linearly increases from 9.3 to 27.4 S/cm and the electron concentration [log(n/cm3)] increases from 3.9×1018 to 2.8×1019cm−3 as the In(NO3)3 concentration rises from 1×10−2 to 1×10−1M. © 2008 Wiley Periodicals, Inc. Electr Eng Jpn, 164(3): 12– 18, 2008; Published online in Wiley InterScience (www.interscience.wiley.com). DOI 10.1002/eej.20673 |
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| AbstractList | In-doped n-CdTe thin films have been electrodeposited at -0.35 V versus Ag/AgCl from a nitric acid solution of pH 1 containing 0.05 mol/dm3(M)Cd(NO3)2, 0.5 mM TeO2, and various concentrations of In(NO3)3. Deposited films were annealed at 350DGC under N2 flow. The films were characterized with X-ray diffraction, energy-dispersive X-ray spectroscopy, scanning electron microscopy, and a reflectance meter. The conductivity and the carrier concentration of the films were measured using the van der Pauw method and Hall effect measurement at room temperature. This is the first study to investigate the effect of the In(NO3)3 concentration on the composition, the crystallinity, and the electric properties of In-doped CdTe films prepared by electrodeposition. The conductivity of the CdTe films linearly increases from 9.3 to 27.4 S/cm and the electron concentration [log(n/cm3)] increases from 3.9X1018 to 2.8X1019cm-3 as the In(NO3)3 concentration rises from 1X10-2 to 1X10-1M. Abstract In‐doped n‐CdTe thin films have been electrodeposited at −0.35 V versus Ag/AgCl from a nitric acid solution of pH 1 containing 0.05 mol/dm 3 (M)Cd(NO 3 ) 2 , 0.5 mM TeO 2 , and various concentrations of In(NO 3 ) 3 . Deposited films were annealed at 350 ° C under N 2 flow. The films were characterized with X‐ray diffraction, energy‐dispersive X‐ray spectroscopy, scanning electron microscopy, and a reflectance meter. The conductivity and the carrier concentration of the films were measured using the van der Pauw method and Hall effect measurement at room temperature. This is the first study to investigate the effect of the In(NO 3 ) 3 concentration on the composition, the crystallinity, and the electric properties of In‐doped CdTe films prepared by electrodeposition. The conductivity of the CdTe films linearly increases from 9.3 to 27.4 S/cm and the electron concentration [log(n/cm 3 )] increases from 3.9×10 18 to 2.8×10 19 cm −3 as the In(NO 3 ) 3 concentration rises from 1×10 −2 to 1×10 −1 M. © 2008 Wiley Periodicals, Inc. Electr Eng Jpn, 164(3): 12– 18, 2008; Published online in Wiley InterScience ( www.interscience.wiley.com ). DOI 10.1002/eej.20673 In‐doped n‐CdTe thin films have been electrodeposited at −0.35 V versus Ag/AgCl from a nitric acid solution of pH 1 containing 0.05 mol/dm3(M)Cd(NO3)2, 0.5 mM TeO2, and various concentrations of In(NO3)3. Deposited films were annealed at 350°C under N2 flow. The films were characterized with X‐ray diffraction, energy‐dispersive X‐ray spectroscopy, scanning electron microscopy, and a reflectance meter. The conductivity and the carrier concentration of the films were measured using the van der Pauw method and Hall effect measurement at room temperature. This is the first study to investigate the effect of the In(NO3)3 concentration on the composition, the crystallinity, and the electric properties of In‐doped CdTe films prepared by electrodeposition. The conductivity of the CdTe films linearly increases from 9.3 to 27.4 S/cm and the electron concentration [log(n/cm3)] increases from 3.9×1018 to 2.8×1019cm−3 as the In(NO3)3 concentration rises from 1×10−2 to 1×10−1M. © 2008 Wiley Periodicals, Inc. Electr Eng Jpn, 164(3): 12– 18, 2008; Published online in Wiley InterScience (www.interscience.wiley.com). DOI 10.1002/eej.20673 |
| Author | Nishio, Tomoari Sato, Shoji Wakita, Koichi Takahashi, Makoto Goto, Hideo Sakurada, Osamu Miyauchi, Toshiyuki Wada, Shinpei |
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| References_xml | – volume: 149 start-page: C311 year: 2002 end-page: C316 article-title: Preparation and characterization of Cu‐doped p‐CdTe films grown by cathodic electrodeposition publication-title: J Electrochem Soc – start-page: II466 year: 1993 end-page: II468 – start-page: II634 year: 1993 end-page: II637 – volume: 61 start-page: 7428 year: 2000 end-page: 7432 article-title: Local atomic structure of CdTe: In at high In concentrations publication-title: APS – start-page: II494 year: 1993 – volume: 38 start-page: 533 year: 1995 end-page: 549 article-title: Thin film II‐VI photovoltaics publication-title: Solid State Electron – volume: 77 start-page: 815 year: 2004 end-page: 822 article-title: High efficiency, magnetron sputtered CdS/CdTe solar cells publication-title: Sol Energy – volume: 131 start-page: 2304 year: 1984 end-page: 2307 article-title: Electrochemical deposition, optical properties and photoelectrical behavior of CdTe films publication-title: J Electrochem Soc – volume: 37 start-page: 467 year: 1990 end-page: 477 article-title: Assessment of MOCVD‐ and MBE‐grown GaAs for high‐efficiency solar cell applications publication-title: IEEE Trans Electron Devices – volume: 70 start-page: 881 year: 1991 end-page: 889 article-title: The effects of CdCl on the electronic properties of molecular‐beam epitaxially grown CdTe/CdS heterojunction solar cells publication-title: J Appl Phys – volume: 29 start-page: 279 year: 1984 end-page: 281 article-title: The photoelectrochemical behavior of electrochemically deposited CdTe films publication-title: Electrochem Acta – volume: 67 start-page: 4167 year: 1990 end-page: 4172 article-title: Effect of dopants on the conductivity of electrodeposited CdTe publication-title: J Appl Phys – volume: 58 start-page: 4292 year: 1985 end-page: 4295 article-title: Effects of heat treatment on the composition and semiconductivity of electrochemically deposited CdTe films publication-title: J Appl Phys – volume: 60 start-page: 2046 year: 1984 end-page: 2049 article-title: Resistivity, carrier concentration, and carrier mobility of electrochemically deposited CdTe films publication-title: J Appl Phys – volume: 55 start-page: 3879 year: 1984 end-page: 3881 article-title: Composition and electronic properties of electrochemically deposited CdTe films publication-title: J Appl Phys – volume: 71 start-page: 3870 year: 1992 end-page: 3876 article-title: Thin‐film junctions of cadmium telluride by metalorganic chemical vapor deposition publication-title: J Appl Phys – ident: e_1_2_1_9_2 doi: 10.1063/1.332904 – ident: e_1_2_1_10_2 doi: 10.1149/1.1470660 – ident: e_1_2_1_3_2 doi: 10.1016/0038-1101(94)00203-R – ident: e_1_2_1_17_2 – volume: 61 start-page: 7428 year: 2000 ident: e_1_2_1_19_2 article-title: Local atomic structure of CdTe: In at high In concentrations publication-title: APS contributor: fullname: Espinosa FJ – ident: e_1_2_1_8_2 doi: 10.1063/1.335514 – ident: e_1_2_1_7_2 doi: 10.1016/0013-4686(84)87060-7 – ident: e_1_2_1_5_2 doi: 10.1063/1.349652 – ident: e_1_2_1_16_2 – ident: e_1_2_1_11_2 doi: 10.1063/1.344980 – start-page: II466 volume-title: Basic version II year: 1993 ident: e_1_2_1_13_2 contributor: fullname: Japan Chemical Society – start-page: II494 volume-title: Basic version II year: 1993 ident: e_1_2_1_20_2 contributor: fullname: Japan Chemical Society – ident: e_1_2_1_15_2 – ident: e_1_2_1_2_2 doi: 10.1109/16.46385 – ident: e_1_2_1_4_2 doi: 10.1063/1.350852 – ident: e_1_2_1_6_2 doi: 10.1016/j.solener.2004.06.013 – ident: e_1_2_1_12_2 doi: 10.1063/1.337207 – ident: e_1_2_1_14_2 doi: 10.1149/1.2115245 – start-page: II634 volume-title: Basic version II year: 1993 ident: e_1_2_1_18_2 contributor: fullname: Japan Chemical Society |
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| Snippet | In‐doped n‐CdTe thin films have been electrodeposited at −0.35 V versus Ag/AgCl from a nitric acid solution of pH 1 containing 0.05 mol/dm3(M)Cd(NO3)2, 0.5 mM... Abstract In‐doped n‐CdTe thin films have been electrodeposited at −0.35 V versus Ag/AgCl from a nitric acid solution of pH 1 containing 0.05 mol/dm 3 (M)Cd(NO... In-doped n-CdTe thin films have been electrodeposited at -0.35 V versus Ag/AgCl from a nitric acid solution of pH 1 containing 0.05 mol/dm3(M)Cd(NO3)2, 0.5 mM... |
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| SubjectTerms | cadmium telluride CdTe electrodeposition II-VI compound semiconductor In doping |
| Title | Preparation and characterization of electrodeposited in-doped CdTe semiconductor films |
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