Structures and electronic states of the InSb{1 1 1}A,B-(2×2) surfaces

• Published in: Surface science Vol. 514; no. 1; pp. 343 - 349
• Main Authors: Eguchi, Toyoaki, Miura, Taneaki, Cho, Sung-Pyo, Kadohira, Takuya, Naruse, Nobuyasu, Osaka, Toshiaki
• Format: Journal Article Conference Proceeding
• Language: English
• Published: Lausanne Elsevier B.V 10.08.2002; Amsterdam Elsevier Science; New York, NY
• Subjects: Condensed matter: electronic structure, electrical, magnetic, and optical properties; Condensed matter: structure, mechanical and thermal properties; Electronic structure and electrical properties of surfaces, interfaces, thin films and low-dimensional structures; Exact sciences and technology; Indium antimonide; Physics; Scanning tunneling microscopy; Solid surfaces and solid-solid interfaces; Surface and interface electron states; Surface electronic phenomena (work function, surface potential, surface states, etc.); Surface states, band structure, electron density of states; Surface structure and topography; Surface structure, morphology, roughness, and topography; Surfaces and interfaces; thin films and whiskers (structure and nonelectronic properties); Surface electronic phenomena (work function, surface potential, surface states, etc.); Scanning tunneling microscopy; Surface structure, morphology, roughness, and topography; Indium antimonide; Electronic structure; Indium antimonides; Surface electron state; Crystal faces; Rough surfaces; Surface topography; Experimental study; STM; III-V semiconductors; Surface structure

Scanning tunneling microscopy (STM) has been used to study surface structures and electronic states of the InSb{1 1 1}A,B-(2×2) surfaces. High-resolution STM images taken at various sample bias voltages for these two surfaces teach us the origin of the electronic states eigen to the In-vacancy buckl...