Structures and electronic states of the InSb{1 1 1}A,B-(2×2) surfaces

• Published in: Surface science Vol. 514; no. 1; pp. 343 - 349
• Main Authors: Eguchi, Toyoaki, Miura, Taneaki, Cho, Sung-Pyo, Kadohira, Takuya, Naruse, Nobuyasu, Osaka, Toshiaki
• Format: Journal Article Conference Proceeding
• Language: English
• Published: Lausanne Elsevier B.V 10.08.2002; Amsterdam Elsevier Science; New York, NY
• Subjects: Condensed matter: electronic structure, electrical, magnetic, and optical properties; Condensed matter: structure, mechanical and thermal properties; Electronic structure and electrical properties of surfaces, interfaces, thin films and low-dimensional structures; Exact sciences and technology; Indium antimonide; Physics; Scanning tunneling microscopy; Solid surfaces and solid-solid interfaces; Surface and interface electron states; Surface electronic phenomena (work function, surface potential, surface states, etc.); Surface states, band structure, electron density of states; Surface structure and topography; Surface structure, morphology, roughness, and topography; Surfaces and interfaces; thin films and whiskers (structure and nonelectronic properties); Surface electronic phenomena (work function, surface potential, surface states, etc.); Scanning tunneling microscopy; Surface structure, morphology, roughness, and topography; Indium antimonide; Electronic structure; Indium antimonides; Surface electron state; Crystal faces; Rough surfaces; Surface topography; Experimental study; STM; III-V semiconductors; Surface structure
• DOI: 10.1016/S0039-6028(02)01651-5
• ISSN: 0039-6028

Scanning tunneling microscopy (STM) has been used to study surface structures and electronic states of the InSb{1 1 1}A,B-(2×2) surfaces. High-resolution STM images taken at various sample bias voltages for these two surfaces teach us the origin of the electronic states eigen to the In-vacancy buckling and the Sb-trimer structure. The former is characterized by a complete charge transfer from the In-atom of the outermost surface to the Sb atom of the second layer, whereas in the latter case an incomplete charge transfer is dominant. The incomplete charge transfer from the Sb-trimer to the rest-Sb atom is caused by a large deformation of the orbital configuration inherent to the rest-Sb atom.