Formation of crystalline heteroepitaxial SiC films on Si by carbonization of polyimide Langmuir-Blodgett films
High-quality crystalline nano-thin SiC films on Si substrates were prepared by carbonization of polyimide (PI) Langmuir-Blodgett (LB) films. The obtained films were characterized by Fourier transform-infrared (FTIR) spectroscopy, X-ray diffraction (XRD) analysis, Raman spectroscopy, transmission ele...
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Published in | Japanese Journal of Applied Physics Vol. 56; no. 6S1; p. 6 |
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Main Authors | , , , , , , , , , , |
Format | Journal Article |
Language | English |
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Tokyo
The Japan Society of Applied Physics
01.06.2017
Japanese Journal of Applied Physics |
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Abstract | High-quality crystalline nano-thin SiC films on Si substrates were prepared by carbonization of polyimide (PI) Langmuir-Blodgett (LB) films. The obtained films were characterized by Fourier transform-infrared (FTIR) spectroscopy, X-ray diffraction (XRD) analysis, Raman spectroscopy, transmission electon microscopy (TEM), transmission electron diffraction (TED), and scanning electron microscopy (SEM). We demonstrated that the carbonization of a PI film on a Si substrate at 1000 °C leads to the formation of a carbon film and SiC nanocrystals on the Si substrate. It was found that five planes in the 3C-SiC(111) film are aligned with four Si(111) planes. As a result of repeated annealing of PI films containing 121 layers at 1200 °C crystalline SiC films were formed on the Si substrate. It was shown that the SiC films (35 nm) grown on Si(111) at 1200 °C have a mainly cubic 3C-SiC structure with small amount of hexagonal polytypes. Only 3C-SiC films (30 nm) were formed on the Si(100) substrate at the same temperature. It was shown that the SiC films (30-35 nm) can cover the voids with size up to 10 µm in the Si substrate. The current-voltage (I-V) characteristics of the n-Si/n-SiC heterostructure were obtained by conductive atomic force microscopy. |
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AbstractList | High-quality crystalline nano-thin SiC films on Si substrates were prepared by carbonization of polyimide (PI) Langmuir-Blodgett (LB) films. The obtained films were characterized by Fourier transform-infrared (FTIR) spectroscopy, X-ray diffraction (XRD) analysis, Raman spectroscopy, transmission electon microscopy (TEM), transmission electron diffraction (TED), and scanning electron microscopy (SEM). We demonstrated that the carbonization of a PI film on a Si substrate at 1000 °C leads to the formation of a carbon film and SiC nanocrystals on the Si substrate. It was found that five planes in the 3C-SiC(111) film are aligned with four Si(111) planes. As a result of repeated annealing of PI films containing 121 layers at 1200 °C crystalline SiC films were formed on the Si substrate. It was shown that the SiC films (35 nm) grown on Si(111) at 1200 °C have a mainly cubic 3C-SiC structure with small amount of hexagonal polytypes. Only 3C-SiC films (30 nm) were formed on the Si(100) substrate at the same temperature. It was shown that the SiC films (30-35 nm) can cover the voids with size up to 10 µm in the Si substrate. The current-voltage (I-V) characteristics of the n-Si/n-SiC heterostructure were obtained by conductive atomic force microscopy. |
Author | Gofman, Iosif V. Smirnov, Alexander N. Pasyuta, Vyacheslav M. Semenova, Tatyana F. Svetlichnyi, Valentin M. Sklizkova, Valentina P. Kudryavtsev, Vladislav V. Kirilenko, Demid A. Luchinin, Viktor V. Panov, Mikhail F. Goloudina, Svetlana I. |
Author_xml | – sequence: 1 givenname: Viktor V. surname: Luchinin fullname: Luchinin, Viktor V. organization: St. Petersburg State Electrotechnical University , 197376 St. Petersburg, Russia – sequence: 2 givenname: Svetlana I. surname: Goloudina fullname: Goloudina, Svetlana I. email: goloudina@mail.ru organization: St. Petersburg State Electrotechnical University , 197376 St. Petersburg, Russia – sequence: 3 givenname: Vyacheslav M. surname: Pasyuta fullname: Pasyuta, Vyacheslav M. organization: St. Petersburg State Electrotechnical University , 197376 St. Petersburg, Russia – sequence: 4 givenname: Mikhail F. surname: Panov fullname: Panov, Mikhail F. organization: St. Petersburg State Electrotechnical University , 197376 St. Petersburg, Russia – sequence: 5 givenname: Alexander N. surname: Smirnov fullname: Smirnov, Alexander N. organization: Ioffe Institut , RAS, 194021 St. Petersburg, Russia – sequence: 6 givenname: Demid A. surname: Kirilenko fullname: Kirilenko, Demid A. organization: Ioffe Institut , RAS, 194021 St. Petersburg, Russia – sequence: 7 givenname: Tatyana F. surname: Semenova fullname: Semenova, Tatyana F. organization: St. Petersburg State University , 199034 St. Petersburg, Russia – sequence: 8 givenname: Valentina P. surname: Sklizkova fullname: Sklizkova, Valentina P. organization: Institute of Macromolecular Compounds , RAS, 199004 St. Petersburg, Russia – sequence: 9 givenname: Iosif V. surname: Gofman fullname: Gofman, Iosif V. organization: Institute of Macromolecular Compounds , RAS, 199004 St. Petersburg, Russia – sequence: 10 givenname: Valentin M. surname: Svetlichnyi fullname: Svetlichnyi, Valentin M. organization: Institute of Macromolecular Compounds , RAS, 199004 St. Petersburg, Russia – sequence: 11 givenname: Vladislav V. surname: Kudryavtsev fullname: Kudryavtsev, Vladislav V. organization: Institute of Macromolecular Compounds , RAS, 199004 St. Petersburg, Russia |
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Snippet | High-quality crystalline nano-thin SiC films on Si substrates were prepared by carbonization of polyimide (PI) Langmuir-Blodgett (LB) films. The obtained films... High-quality crystalline nano-thin SiC films on Si substrates were prepared by carbonization of polyimide (PI) Langmuir–Blodgett (LB) films. The obtained films... |
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SubjectTerms | Atomic force microscopy Atomic structure Carbonization Crystal structure Crystallinity Current voltage characteristics Diffraction Fourier transforms Infrared analysis Langmuir-Blodgett films Planes Polytypes Scanning electron microscopy Silicon carbide Silicon substrates Spectrum analysis Thin films Transmission electron diffraction X-ray diffraction |
Title | Formation of crystalline heteroepitaxial SiC films on Si by carbonization of polyimide Langmuir-Blodgett films |
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