Detailed analysis of edge effects in SIMOX-MOS transistors

• Published in: IEEE transactions on electron devices Vol. 39; no. 4; pp. 874 - 882
• Main Authors: Elewa, T., Kleveland, B., Cristoloveanu, S., Boukriss, B., Chovet, A.
• Format: Journal Article
• Language: English
• Published: New York, NY IEEE 01.04.1992; Institute of Electrical and Electronics Engineers
• Subjects: Applied sciences; Charge measurement; Charge pumps; Current measurement; Doping; Electronics; Exact sciences and technology; MOSFETs; Noise measurement; Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices; Semiconductor films; Silicon on insulator technology; Subthreshold current; Threshold voltage; Transistors; Silicon on insulator technology; Field effect transistor; SIMOX technology; Pumping; Edge effect; Silicon; MOS transistor; LOCOS technology
• DOI: 10.1109/16.127478
• ISSN: 0018-9383

A comprehensive investigation of edge effects in LOCOS-isolated silicon-on-insulator devices is made by combining the measurements of the static characteristics, charge pumping, and noise. Even when a substrate bias is used to mask the conduction on the island edges, the high-frequency edge effects are still detectable. Appropriate models are proposed to separate the edge contribution from those of the front and back interfaces. It is found that the defect density on the edges is inhomogeneous, increasing vertically from the top to the bottom of the film and laterally from the middle to the end of the channel. Slow traps are identified at the back interface, close to the source/drain junctions.< >