Physical properties of an oxide photoresist film for submicron pattern lithography

• Published in: Thin solid films Vol. 542; pp. 409 - 414
• Main Authors: Chiang, Donyau, Chang, Chun-Ming, Chen, Shi-Wei, Yang, Chin-Tien, Hsueh, Wen-Jeng
• Format: Journal Article
• Language: English
• Published: Amsterdam Elsevier B.V 02.09.2013; Elsevier
• Subjects: Coefficients; Condensed matter: electronic structure, electrical, magnetic, and optical properties; Cross-disciplinary physics: materials science; rheology; Crystallization activation energy; Deposition; Deposition by sputtering; Dielectric thin films; Dielectric, piezoelectric, ferroelectric and antiferroelectric materials; Dielectrics, piezoelectrics, and ferroelectrics and their properties; Direct laser writing; Etching; Exact sciences and technology; Extinction coefficient; Flow rate; Fundamental areas of phenomenology (including applications); Lasers; Materials science; Methods of deposition of films and coatings; film growth and epitaxy; Optics; Oxide photoresist; Oxides; Photoresists; Physics; Pits; Refraction index; Semiconductor lasers; laser diodes; Sputtering; Thermal lithography; Oxide photoresist; Extinction coefficient; Refraction index; Thermal lithography; Crystallization activation energy; Sputtering; Direct laser writing; Refractive index; Aperture; Laser diodes; Deposition process; Thin films; Cathode sputtering; Semiconductor lasers; Temperature effects; Etch pits; Physical vapor deposition; Apertures; Absorption spectra; Activation energy; Optical absorption; Crystal structure; Temperature dependence; Dielectric materials; Lithography; Crystallization; X-ray diffractometers; Laser beams; Transmittance; Physical properties; Heat treatments; Laser writing; Dielectric thin films; Photoresists; Reactive sputtering; Sputter deposition

The minimum etched pits of 300nm diameter and the trenches of 300nm width with a 50nm depth for both geometries are prepared in the GeSbSn oxide photoresist on the silicon substrates. The lithographic patterns are recorded by direct laser writing, using a 405nm laser diode and 0.9 numerical aperture...