Synthesis and characterization of silicon carbide, silicon oxynitride and silicon nitride nanowires

• Published in: Journal of materials chemistry Vol. 12; no. 5; pp. 1606 - 1611
• Main Authors: GUNDIAH, Gautam, MADHAV, G. V, GOVINDARAJ, A, SEIKH, Md. Motin, RAO, C. N. R
• Format: Journal Article
• Language: English
• Published: Cambridge Royal Society of Chemistry 01.01.2002
• Subjects: Cross-disciplinary physics: materials science; rheology; Exact sciences and technology; Materials science; Nanoscale materials and structures: fabrication and characterization; Physics; Raman spectra; Catalytic reaction; Inorganic compounds; Nanotubes; Photoluminescence; Silicon Oxynitrides; Silicon carbides; Controlled atmospheres; Crystal growth from vapors; Experimental study; Characterization; Nanoparticles; Crystal growth habit; Activated carbon; Morphology; Chemical preparation; Reaction mechanism; Nanowire; Silicon nitrides; Silica gel; Nanostructured materials; Gaseous phase reaction; Nanocrystal
• ISSN: 0959-9428; 1364-5501
• DOI: 10.1039/b200161f

Several methods were used to synthesise SiC nanowires. The methods include heating silica gel or fumed silica with activated carbon in a reducing atmosphere, the carbon particles being produced in situ in one of the methods. The simplest method to obtain beta-SiC nanowires involves heating silica gel with activated carbon at 1360 C in H2 or NH3. The same reaction, if carried out in the presence of catalytic iron particles, at 1200 C gives alpha-Si3N4 nanowires and Si2N2O nanowires at 1100 C. Another method to obtain Si3N4 nanowires is to heat multi-walled carbon nanotubes with silica gel at 1360 C in an atmosphere of NH3. In the presence of catalytic Fe particles, this method yields alpha-Si3N4 nanowires in pure form. 23 refs.