Third-order optical nonlinearity in nonstoichiometric amorphous silicon carbide films
This study investigated the third-order nonlinear optical properties of amorphous silicon carbide (SiC) films prepared via magnetron sputtering at room temperature (RT) and annealed at 200 °C–800 °C. The third-order optical nonlinearity was investigated by Z-scan measurement at a wavelength of 1064 ...
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| Published in | Journal of alloys and compounds Vol. 794; pp. 518 - 524 |
|---|---|
| Main Authors | , , , , , , , , , , |
| Format | Journal Article |
| Language | English |
| Published |
Lausanne
Elsevier B.V
25.07.2019
Elsevier BV |
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| Abstract | This study investigated the third-order nonlinear optical properties of amorphous silicon carbide (SiC) films prepared via magnetron sputtering at room temperature (RT) and annealed at 200 °C–800 °C. The third-order optical nonlinearity was investigated by Z-scan measurement at a wavelength of 1064 nm and a pulse duration of 25 ps. The self-defocusing behaviour was observed in a large nonlinear refractive index n2 ∼10−14 m2/W, which was five orders of magnitude larger than the value of SiC crystals. By fitting the open-aperture data of the Z-scan, we determined the two- and three-photon absorption in the SiC films prepared at RT and in the annealed samples, respectively. The different nonlinear absorption behaviour was probably ascribed to the intermediate states between the conduction and valence bands.
•SiC films without hydrogen were prepared at room temperature by magnetron sputtering.•The atom composition and bonds in SiC films can be influenced by annealing process.•Large nonlinear refractive index ∼10−14 m2/W in SiC films was determined at 1064 nm.•Two- and three-photon absorptionbehaviors in the SiC films were observed. |
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| AbstractList | This study investigated the third-order nonlinear optical properties of amorphous silicon carbide (SiC) films prepared via magnetron sputtering at room temperature (RT) and annealed at 200 °C–800 °C. The third-order optical nonlinearity was investigated by Z-scan measurement at a wavelength of 1064 nm and a pulse duration of 25 ps. The self-defocusing behaviour was observed in a large nonlinear refractive index n2 ~10−14 m2/W, which was five orders of magnitude larger than the value of SiC crystals. By fitting the open-aperture data of the Z-scan, we determined the two- and three-photon absorption in the SiC films prepared at RT and in the annealed samples, respectively. The different nonlinear absorption behaviour was probably ascribed to the intermediate states between the conduction and valence bands. This study investigated the third-order nonlinear optical properties of amorphous silicon carbide (SiC) films prepared via magnetron sputtering at room temperature (RT) and annealed at 200 °C–800 °C. The third-order optical nonlinearity was investigated by Z-scan measurement at a wavelength of 1064 nm and a pulse duration of 25 ps. The self-defocusing behaviour was observed in a large nonlinear refractive index n2 ∼10−14 m2/W, which was five orders of magnitude larger than the value of SiC crystals. By fitting the open-aperture data of the Z-scan, we determined the two- and three-photon absorption in the SiC films prepared at RT and in the annealed samples, respectively. The different nonlinear absorption behaviour was probably ascribed to the intermediate states between the conduction and valence bands. •SiC films without hydrogen were prepared at room temperature by magnetron sputtering.•The atom composition and bonds in SiC films can be influenced by annealing process.•Large nonlinear refractive index ∼10−14 m2/W in SiC films was determined at 1064 nm.•Two- and three-photon absorptionbehaviors in the SiC films were observed. |
| Author | Yang, Cheng Peng, Qianqian Ning, Tingyin Huo, Yanyan Zhang, Chao Ding, Baoyong Xiu, Xianwu Jiang, Shouzhen Yu, Xiuru Lu, Heng Man, Baoyuan |
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| Snippet | This study investigated the third-order nonlinear optical properties of amorphous silicon carbide (SiC) films prepared via magnetron sputtering at room... |
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| SubjectTerms | Amorphous materials Amorphous silicon Annealing Apertures Defocusing Magnetic properties Magnetron sputtering Nonlinearity Optical properties Photon absorption Photovoltaic cells Pulse duration Refractivity SiC film Silicon carbide Third-order optical nonlinearity Z-scan |
| Title | Third-order optical nonlinearity in nonstoichiometric amorphous silicon carbide films |
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