A self‐biased and all‐in‐one voltage and current reference

This Letter presents a high‐performance self‐biased and all‐in‐one voltage and current reference without BJT and V–I converter exploiting the zero‐temperature‐coefficient point of the N‐type MOSFET. With the help of the low‐temperature‐coefficient resistors and the self‐biased two‐stage OTA structur...

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Published inElectronics letters Vol. 57; no. 1; pp. 6 - 8
Main Authors Wang, Yuanfei, Luo, Ping, Yang, Bingzhong, Tang, Tianyuan, Zhang, Bo
Format Journal Article
LanguageEnglish
Published Stevenage John Wiley & Sons, Inc 01.01.2021
Wiley
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Abstract This Letter presents a high‐performance self‐biased and all‐in‐one voltage and current reference without BJT and V–I converter exploiting the zero‐temperature‐coefficient point of the N‐type MOSFET. With the help of the low‐temperature‐coefficient resistors and the self‐biased two‐stage OTA structure, the all‐in‐one reference can achieve the average temperature coefficients of 6.6 and 34 ppm/°C of voltage and current reference from −40 to 125 °C, respectively. Meanwhile, the line sensitivities are 0.08%/V and 0.23%/V of voltage and current reference. And the power supply rejection ratio of the voltage reference is −93 dB@100 Hz with the power consumption of 12.6 μW@tt corner and VDD = 2.5 V. The reference circuit is realized in a standard 180 nm CMOS process with the area of 0.0621 mm × mm.
AbstractList This Letter presents a high‐performance self‐biased and all‐in‐one voltage and current reference without BJT and V–I converter exploiting the zero‐temperature‐coefficient point of the N‐type MOSFET. With the help of the low‐temperature‐coefficient resistors and the self‐biased two‐stage OTA structure, the all‐in‐one reference can achieve the average temperature coefficients of 6.6 and 34 ppm/°C of voltage and current reference from −40 to 125 °C, respectively. Meanwhile, the line sensitivities are 0.08%/V and 0.23%/V of voltage and current reference. And the power supply rejection ratio of the voltage reference is −93 dB@100 Hz with the power consumption of 12.6 μW@tt corner and VDD = 2.5 V. The reference circuit is realized in a standard 180 nm CMOS process with the area of 0.0621 mm × mm.
This Letter presents a high‐performance self‐biased and all‐in‐one voltage and current reference without BJT and V–I converter exploiting the zero‐temperature‐coefficient point of the N‐type MOSFET. With the help of the low‐temperature‐coefficient resistors and the self‐biased two‐stage OTA structure, the all‐in‐one reference can achieve the average temperature coefficients of 6.6 and 34 ppm/°C of voltage and current reference from −40 to 125 °C, respectively. Meanwhile, the line sensitivities are 0.08%/V and 0.23%/V of voltage and current reference. And the power supply rejection ratio of the voltage reference is −93 dB@100 Hz with the power consumption of 12.6 μW@tt corner and VDD = 2.5 V. The reference circuit is realized in a standard 180 nm CMOS process with the area of 0.0621 mm × mm.
Abstract This Letter presents a high‐performance self‐biased and all‐in‐one voltage and current reference without BJT and V–I converter exploiting the zero‐temperature‐coefficient point of the N‐type MOSFET. With the help of the low‐temperature‐coefficient resistors and the self‐biased two‐stage OTA structure, the all‐in‐one reference can achieve the average temperature coefficients of 6.6 and 34 ppm/°C of voltage and current reference from −40 to 125 °C, respectively. Meanwhile, the line sensitivities are 0.08%/V and 0.23%/V of voltage and current reference. And the power supply rejection ratio of the voltage reference is −93 dB@100 Hz with the power consumption of 12.6 μW@tt corner and VDD = 2.5 V. The reference circuit is realized in a standard 180 nm CMOS process with the area of 0.0621 mm × mm.
Author Luo, Ping
Yang, Bingzhong
Tang, Tianyuan
Wang, Yuanfei
Zhang, Bo
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Snippet This Letter presents a high‐performance self‐biased and all‐in‐one voltage and current reference without BJT and V–I converter exploiting the...
Abstract This Letter presents a high‐performance self‐biased and all‐in‐one voltage and current reference without BJT and V–I converter exploiting the...
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SubjectTerms Circuits
CMOS integrated circuits
Design
Electric potential
Power electronics, supply and supervisory circuits
Power supply
Temperature effects
Voltage
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Title A self‐biased and all‐in‐one voltage and current reference
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