A self‐biased and all‐in‐one voltage and current reference

• Published in: Electronics letters Vol. 57; no. 1; pp. 6 - 8
• Main Authors: Wang, Yuanfei, Luo, Ping, Yang, Bingzhong, Tang, Tianyuan, Zhang, Bo
• Format: Journal Article
• Language: English
• Published: Stevenage John Wiley & Sons, Inc 01.01.2021; Wiley
• Subjects: Circuits; CMOS integrated circuits; Design; Electric potential; Power electronics, supply and supervisory circuits; Power supply; Temperature effects; Voltage; China
• ISSN: 1350-911X; 0013-5194; 1350-911X
• DOI: 10.1049/ell2.12037

This Letter presents a high‐performance self‐biased and all‐in‐one voltage and current reference without BJT and V–I converter exploiting the zero‐temperature‐coefficient point of the N‐type MOSFET. With the help of the low‐temperature‐coefficient resistors and the self‐biased two‐stage OTA structure, the all‐in‐one reference can achieve the average temperature coefficients of 6.6 and 34 ppm/°C of voltage and current reference from −40 to 125 °C, respectively. Meanwhile, the line sensitivities are 0.08%/V and 0.23%/V of voltage and current reference. And the power supply rejection ratio of the voltage reference is −93 dB@100 Hz with the power consumption of 12.6 μW@tt corner and VDD = 2.5 V. The reference circuit is realized in a standard 180 nm CMOS process with the area of 0.0621 mm × mm.