Electron beam lithography simulation for high resolution and high-density patterns

• Published in: Vacuum Vol. 62; no. 2; pp. 263 - 271
• Main Authors: Raptis, I, Glezos, N, Valamontes, E, Zervas, E, Argitis, P
• Format: Journal Article Conference Proceeding
• Language: English
• Published: Oxford Elsevier Ltd 15.06.2001; Elsevier
• Subjects: Applied sciences; Boltzmann transport equation; Electron beam lithography; Electronics; Exact sciences and technology; Microelectronic fabrication (materials and surfaces technology); Nanofabrication; Proximity effect; Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices; Boltzmann transport equation; Proximity effect; Nanofabrication; Electron beam lithography; Boltzmann equation; Microelectronic fabrication; Simulation; Development cost; Multiple layer; Positive resist; Analytical solution; Nanotechnology
• DOI: 10.1016/S0042-207X(00)00448-6
• ISSN: 0042-207X

A fast simulator for electron beam lithography, called SELID TM, is applied for the simulation and prediction of the resist profile of high-resolution patterns in the case of homogeneous and multilayer substrates. For exposure simulation, an analytical solution based on the Boltzmann transport equation (where all important scattering phenomena have been taken into account) for a wide range of e-beam energies is used. The case of substrates consisting of more than one layer (multilayer) is considered in depth as it is of great importance in e-beam patterning. By combining the energy deposition data from simulation with analytical functions describing the resist development (for the conventional positive-resist PMMA), complete simulation of dense layouts in the sub-quarter-micron range has been carried out. Additionally, the simulation results are compared with experimental ones for dense patterns in the sub-quarter-micron region. By using SELID TM, forecast of resist profile with considerable accuracy for a wide range of resists, substrates and energies is possible, reducing in that way the cost of process development. Additionally, proximity effect parameters are extracted easily for use in any proximity correction package.