Influence of parallel magnetic field on cyclotron mass in double-layer two-dimensional electron system

• Published in: Microelectronic engineering Vol. 47; no. 1; pp. 293 - 295
• Main Authors: Takaoka, S., Kuriyama, A., Oto, K., Murase, K., Cukr, M., Jungwirth, T., Smrcka, L.
• Format: Journal Article Conference Proceeding
• Language: English
• Published: Amsterdam Elsevier B.V 01.06.1999; Elsevier Science
• Subjects: Applied sciences; Condensed matter: electronic structure, electrical, magnetic, and optical properties; Electronics; Exact sciences and technology; Iii-v and ii-vi semiconductors; Infrared and raman spectra and scattering; Microelectronic fabrication (materials and surfaces technology); Optical properties and condensed-matter spectroscopy and other interactions of matter with particles and radiation; Physics; Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices; Ternary compound; Cyclotron mass; Binary compound; Cyclotron resonance; Bilayer; Fourier spectrometry; III-V compound; Gallium Arsenides; Aluminium Arsenides; Parallel field; Microelectronic fabrication; Landau level; Far infrared spectrometry; Magnetic field; Heterojunction

The cyclotron resonance of the double-layer two-dimensional electron system in tilted magnetic fields is investigated with the far-infrared Fourier spectrometer. We measure the parallel magnetic field ( B |) dependence of cyclotron mass due to the distortion of the “Fermi loop” by B |.