Vertical GaN-on-GaN Schottky Diodes as α-Particle Radiation Sensors
Among the different semiconductors, GaN provides advantages over Si, SiC and GaAs in radiation hardness, resulting in researchers exploring the development of GaN-based radiation sensors to be used in particle physics, astronomic and nuclear science applications. Several reports have demonstrated th...
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Published in | Micromachines (Basel) Vol. 11; no. 5; p. 519 |
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Abstract | Among the different semiconductors, GaN provides advantages over Si, SiC and GaAs in radiation hardness, resulting in researchers exploring the development of GaN-based radiation sensors to be used in particle physics, astronomic and nuclear science applications. Several reports have demonstrated the usefulness of GaN as an α-particle detector. Work in developing GaN-based radiation sensors are still evolving and GaN sensors have successfully detected α-particles, neutrons, ultraviolet rays, x-rays, electrons and γ-rays. This review elaborates on the design of a good radiation detector along with the state-of-the-art α-particle detectors using GaN. Successful improvement in the growth of GaN drift layers (DL) with 2 order of magnitude lower in charge carrier density (CCD) (7.6 × 10
/cm
) on low threading dislocation density (3.1 × 10
/cm
) hydride vapor phase epitaxy (HVPE) grown free-standing GaN substrate, which helped ~3 orders of magnitude lower reverse leakage current (
) with 3-times increase of reverse breakdown voltages. The highest reverse breakdown voltage of -2400 V was also realized from Schottky barrier diodes (SBDs) on a free-standing GaN substrate with 30 μm DL. The formation of thick depletion width (DW) with low CCD resulted in improving high-energy (5.48 MeV) α-particle detection with the charge collection efficiency (CCE) of 62% even at lower bias voltages (-20 V). The detectors also detected 5.48 MeV α-particle with CCE of 100% from SBDs with 30-μm DL at -750 V. |
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AbstractList | Among the different semiconductors, GaN provides advantages over Si, SiC and GaAs in radiation hardness, resulting in researchers exploring the development of GaN-based radiation sensors to be used in particle physics, astronomic and nuclear science applications. Several reports have demonstrated the usefulness of GaN as an α-particle detector. Work in developing GaN-based radiation sensors are still evolving and GaN sensors have successfully detected α-particles, neutrons, ultraviolet rays, x-rays, electrons and γ-rays. This review elaborates on the design of a good radiation detector along with the state-of-the-art α-particle detectors using GaN. Successful improvement in the growth of GaN drift layers (DL) with 2 order of magnitude lower in charge carrier density (CCD) (7.6 × 1014/cm3) on low threading dislocation density (3.1 × 106/cm2) hydride vapor phase epitaxy (HVPE) grown free-standing GaN substrate, which helped ~3 orders of magnitude lower reverse leakage current (IR) with 3-times increase of reverse breakdown voltages. The highest reverse breakdown voltage of −2400 V was also realized from Schottky barrier diodes (SBDs) on a free-standing GaN substrate with 30 μm DL. The formation of thick depletion width (DW) with low CCD resulted in improving high-energy (5.48 MeV) α-particle detection with the charge collection efficiency (CCE) of 62% even at lower bias voltages (−20 V). The detectors also detected 5.48 MeV α-particle with CCE of 100% from SBDs with 30-μm DL at −750 V. Among the different semiconductors, GaN provides advantages over Si, SiC and GaAs in radiation hardness, resulting in researchers exploring the development of GaN-based radiation sensors to be used in particle physics, astronomic and nuclear science applications. Several reports have demonstrated the usefulness of GaN as an α-particle detector. Work in developing GaN-based radiation sensors are still evolving and GaN sensors have successfully detected α-particles, neutrons, ultraviolet rays, x-rays, electrons and γ-rays. This review elaborates on the design of a good radiation detector along with the state-of-the-art α-particle detectors using GaN. Successful improvement in the growth of GaN drift layers (DL) with 2 order of magnitude lower in charge carrier density (CCD) (7.6 × 1014/cm3) on low threading dislocation density (3.1 × 106/cm2) hydride vapor phase epitaxy (HVPE) grown free-standing GaN substrate, which helped ~3 orders of magnitude lower reverse leakage current (IR) with 3-times increase of reverse breakdown voltages. The highest reverse breakdown voltage of -2400 V was also realized from Schottky barrier diodes (SBDs) on a free-standing GaN substrate with 30 μm DL. The formation of thick depletion width (DW) with low CCD resulted in improving high-energy (5.48 MeV) α-particle detection with the charge collection efficiency (CCE) of 62% even at lower bias voltages (-20 V). The detectors also detected 5.48 MeV α-particle with CCE of 100% from SBDs with 30-μm DL at -750 V. Among the different semiconductors, GaN provides advantages over Si, SiC and GaAs in radiation hardness, resulting in researchers exploring the development of GaN-based radiation sensors to be used in particle physics, astronomic and nuclear science applications. Several reports have demonstrated the usefulness of GaN as an α-particle detector. Work in developing GaN-based radiation sensors are still evolving and GaN sensors have successfully detected α-particles, neutrons, ultraviolet rays, x-rays, electrons and γ-rays. This review elaborates on the design of a good radiation detector along with the state-of-the-art α-particle detectors using GaN. Successful improvement in the growth of GaN drift layers (DL) with 2 order of magnitude lower in charge carrier density (CCD) (7.6 × 10 /cm ) on low threading dislocation density (3.1 × 10 /cm ) hydride vapor phase epitaxy (HVPE) grown free-standing GaN substrate, which helped ~3 orders of magnitude lower reverse leakage current ( ) with 3-times increase of reverse breakdown voltages. The highest reverse breakdown voltage of -2400 V was also realized from Schottky barrier diodes (SBDs) on a free-standing GaN substrate with 30 μm DL. The formation of thick depletion width (DW) with low CCD resulted in improving high-energy (5.48 MeV) α-particle detection with the charge collection efficiency (CCE) of 62% even at lower bias voltages (-20 V). The detectors also detected 5.48 MeV α-particle with CCE of 100% from SBDs with 30-μm DL at -750 V. Among the different semiconductors, GaN provides advantages over Si, SiC and GaAs in radiation hardness, resulting in researchers exploring the development of GaN-based radiation sensors to be used in particle physics, astronomic and nuclear science applications. Several reports have demonstrated the usefulness of GaN as an α-particle detector. Work in developing GaN-based radiation sensors are still evolving and GaN sensors have successfully detected α-particles, neutrons, ultraviolet rays, x-rays, electrons and γ-rays. This review elaborates on the design of a good radiation detector along with the state-of-the-art α-particle detectors using GaN. Successful improvement in the growth of GaN drift layers (DL) with 2 order of magnitude lower in charge carrier density (CCD) (7.6 × 10 14 /cm 3 ) on low threading dislocation density (3.1 × 10 6 /cm 2 ) hydride vapor phase epitaxy (HVPE) grown free-standing GaN substrate, which helped ~3 orders of magnitude lower reverse leakage current ( I R ) with 3-times increase of reverse breakdown voltages. The highest reverse breakdown voltage of −2400 V was also realized from Schottky barrier diodes (SBDs) on a free-standing GaN substrate with 30 μm DL. The formation of thick depletion width (DW) with low CCD resulted in improving high-energy (5.48 MeV) α-particle detection with the charge collection efficiency (CCE) of 62% even at lower bias voltages (−20 V). The detectors also detected 5.48 MeV α-particle with CCE of 100% from SBDs with 30-μm DL at −750 V. |
Author | Kennedy, John Sandupatla, Abhinay Ing, Ng Geok Amano, Hiroshi Arulkumaran, Subramaniam Nitta, Shugo |
AuthorAffiliation | 1 School of Electrical and Electronics Engineering, Nanyang Technological University, Singapore 639798, Singapore 4 National Isotope Center, GNS Science, Lower Hutt 5010, New Zealand; J.Kennedy@gns.cri.nz 2 Temasek Laboratories in Nanyang Technological University, Research Techno Plaza, 50 Nanyang Drive, Singapore 639798, Singapore; Subramaniam@ntu.edu.sg 3 Center for Integrated Research of Future Electronics (CIRFE), IMaSS, Nagoya University, Nagoya 464-8603, Japan; nitta@nagoya-u.jp (S.N.); amano@nuee.nagoya-u.ac.jp (H.A.) |
AuthorAffiliation_xml | – name: 1 School of Electrical and Electronics Engineering, Nanyang Technological University, Singapore 639798, Singapore – name: 3 Center for Integrated Research of Future Electronics (CIRFE), IMaSS, Nagoya University, Nagoya 464-8603, Japan; nitta@nagoya-u.jp (S.N.); amano@nuee.nagoya-u.ac.jp (H.A.) – name: 4 National Isotope Center, GNS Science, Lower Hutt 5010, New Zealand; J.Kennedy@gns.cri.nz – name: 2 Temasek Laboratories in Nanyang Technological University, Research Techno Plaza, 50 Nanyang Drive, Singapore 639798, Singapore; Subramaniam@ntu.edu.sg |
Author_xml | – sequence: 1 givenname: Abhinay orcidid: 0000-0003-2928-0619 surname: Sandupatla fullname: Sandupatla, Abhinay organization: School of Electrical and Electronics Engineering, Nanyang Technological University, Singapore 639798, Singapore – sequence: 2 givenname: Subramaniam surname: Arulkumaran fullname: Arulkumaran, Subramaniam organization: Center for Integrated Research of Future Electronics (CIRFE), IMaSS, Nagoya University, Nagoya 464-8603, Japan – sequence: 3 givenname: Ng Geok surname: Ing fullname: Ing, Ng Geok organization: Temasek Laboratories in Nanyang Technological University, Research Techno Plaza, 50 Nanyang Drive, Singapore 639798, Singapore – sequence: 4 givenname: Shugo surname: Nitta fullname: Nitta, Shugo organization: Center for Integrated Research of Future Electronics (CIRFE), IMaSS, Nagoya University, Nagoya 464-8603, Japan – sequence: 5 givenname: John orcidid: 0000-0002-9126-4997 surname: Kennedy fullname: Kennedy, John organization: National Isotope Center, GNS Science, Lower Hutt 5010, New Zealand – sequence: 6 givenname: Hiroshi orcidid: 0000-0002-7598-2593 surname: Amano fullname: Amano, Hiroshi organization: Center for Integrated Research of Future Electronics (CIRFE), IMaSS, Nagoya University, Nagoya 464-8603, Japan |
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Keywords | low voltage GaN-on-GaN thick depletion width detectors high-energy α-particle detection schottky barrier diodes |
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SubjectTerms | Breakdown Carrier density Charge density Charge efficiency Current carriers Depletion Dislocation density Electric fields Electrodes Epitaxial growth Gallium nitrides GaN-on-GaN Heat conductivity high-energy α-particle detection Leakage current low voltage Nuclear energy Nuclear power plants Particle physics Radiation counters Radiation detectors Review schottky barrier diodes Schottky diodes Semiconductors Silicon carbide Substrates thick depletion width detectors Threading dislocations Vapor phase epitaxy Vapor phases |
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Title | Vertical GaN-on-GaN Schottky Diodes as α-Particle Radiation Sensors |
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