Type-II tunable SiC/InSe heterostructures under an electric field and biaxial strain
In this study, first-principles calculations based on the density functional theory (DFT) are exploited to investigate the electronic capabilities of SiC/InSe heterostructures. According to our results, the SiC/InSe heterostructure possesses an inherent type-II band alignment, which displays a notic...
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| Published in | Physical chemistry chemical physics : PCCP Vol. 22; no. 17; pp. 9647 - 9655 |
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| Main Authors | , , , , , , , , , , , |
| Format | Journal Article |
| Language | English |
| Published |
England
Royal Society of Chemistry
06.05.2020
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| Subjects | |
| Online Access | Get full text |
| ISSN | 1463-9076 1463-9084 1463-9084 |
| DOI | 10.1039/d0cp00291g |
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| Abstract | In this study, first-principles calculations based on the density functional theory (DFT) are exploited to investigate the electronic capabilities of SiC/InSe heterostructures. According to our results, the SiC/InSe heterostructure possesses an inherent type-II band alignment, which displays a noticeable Stark effect on the band gap under a stable electric field. Besides, the heterostructure exhibits a low carrier effective mass and a narrower band gap when it is subject to tensile strain. More interestingly, the transition from an indirect to a direct band gap occurs when 8% of compressive strain is applied. Taken together, findings in this study indicate that the SiC/InSe heterostructure opens up a new avenue for its application in the fields of optoelectronics and microelectronics.
A novel type II band alignment with lower carrier effective mass can be adjusted by an electric field and strain. |
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| AbstractList | In this study, first-principles calculations based on the density functional theory (DFT) are exploited to investigate the electronic capabilities of SiC/InSe heterostructures. According to our results, the SiC/InSe heterostructure possesses an inherent type-II band alignment, which displays a noticeable Stark effect on the band gap under a stable electric field. Besides, the heterostructure exhibits a low carrier effective mass and a narrower band gap when it is subject to tensile strain. More interestingly, the transition from an indirect to a direct band gap occurs when 8% of compressive strain is applied. Taken together, findings in this study indicate that the SiC/InSe heterostructure opens up a new avenue for its application in the fields of optoelectronics and microelectronics. In this study, first-principles calculations based on the density functional theory (DFT) are exploited to investigate the electronic capabilities of SiC/InSe heterostructures. According to our results, the SiC/InSe heterostructure possesses an inherent type-II band alignment, which displays a noticeable Stark effect on the band gap under a stable electric field. Besides, the heterostructure exhibits a low carrier effective mass and a narrower band gap when it is subject to tensile strain. More interestingly, the transition from an indirect to a direct band gap occurs when 8% of compressive strain is applied. Taken together, findings in this study indicate that the SiC/InSe heterostructure opens up a new avenue for its application in the fields of optoelectronics and microelectronics. A novel type II band alignment with lower carrier effective mass can be adjusted by an electric field and strain. In this study, first-principles calculations based on the density functional theory (DFT) are exploited to investigate the electronic capabilities of SiC/InSe heterostructures. According to our results, the SiC/InSe heterostructure possesses an inherent type-II band alignment, which displays a noticeable Stark effect on the band gap under a stable electric field. Besides, the heterostructure exhibits a low carrier effective mass and a narrower band gap when it is subject to tensile strain. More interestingly, the transition from an indirect to a direct band gap occurs when 8% of compressive strain is applied. Taken together, findings in this study indicate that the SiC/InSe heterostructure opens up a new avenue for its application in the fields of optoelectronics and microelectronics.In this study, first-principles calculations based on the density functional theory (DFT) are exploited to investigate the electronic capabilities of SiC/InSe heterostructures. According to our results, the SiC/InSe heterostructure possesses an inherent type-II band alignment, which displays a noticeable Stark effect on the band gap under a stable electric field. Besides, the heterostructure exhibits a low carrier effective mass and a narrower band gap when it is subject to tensile strain. More interestingly, the transition from an indirect to a direct band gap occurs when 8% of compressive strain is applied. Taken together, findings in this study indicate that the SiC/InSe heterostructure opens up a new avenue for its application in the fields of optoelectronics and microelectronics. |
| Author | Wang, Zhu Wei, Xing Fan, Jibin Guo, Tingting Liu, Jian Li, Ting Zha, Zhengdi Zhang, Yan Tian, Ye Duan, Li Ni, Lei Weng, Yijun |
| AuthorAffiliation | Institute of Physics Chinese Academy of Sciences School of Materials Science and Engineering Shandong University Chang'an University School of Physics |
| AuthorAffiliation_xml | – name: School of Physics – name: Chang'an University – name: Shandong University – name: Chinese Academy of Sciences – name: Institute of Physics – name: School of Materials Science and Engineering |
| Author_xml | – sequence: 1 givenname: Zhu surname: Wang fullname: Wang, Zhu – sequence: 2 givenname: Yan surname: Zhang fullname: Zhang, Yan – sequence: 3 givenname: Xing surname: Wei fullname: Wei, Xing – sequence: 4 givenname: Tingting surname: Guo fullname: Guo, Tingting – sequence: 5 givenname: Jibin surname: Fan fullname: Fan, Jibin – sequence: 6 givenname: Lei surname: Ni fullname: Ni, Lei – sequence: 7 givenname: Yijun surname: Weng fullname: Weng, Yijun – sequence: 8 givenname: Zhengdi surname: Zha fullname: Zha, Zhengdi – sequence: 9 givenname: Jian surname: Liu fullname: Liu, Jian – sequence: 10 givenname: Ye surname: Tian fullname: Tian, Ye – sequence: 11 givenname: Ting surname: Li fullname: Li, Ting – sequence: 12 givenname: Li surname: Duan fullname: Duan, Li |
| BackLink | https://www.ncbi.nlm.nih.gov/pubmed/32328602$$D View this record in MEDLINE/PubMed |
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| Snippet | In this study, first-principles calculations based on the density functional theory (DFT) are exploited to investigate the electronic capabilities of SiC/InSe... |
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| SubjectTerms | Compressive properties Density functional theory Electric fields Energy gap First principles Heterostructures Optoelectronics Stark effect Tensile strain |
| Title | Type-II tunable SiC/InSe heterostructures under an electric field and biaxial strain |
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