The flexible-transparent p-n junction film device of N-doped Cu2O/SnO2 orderly nanowire arrays towards highly photovoltaic conversion and stability

• Published in: Chemical engineering journal (Lausanne, Switzerland : 1996) Vol. 382; p. 122813
• Main Authors: Pan, Jiaqi, Li, Shi, Liu, Yanyan, Ou, Wei, Li, Hongli, Zhao, Weijie, Wang, Jingjing, Song, Changsheng, Zheng, Yingying, Li, Chaorong
• Format: Journal Article
• Language: English
• Published: Elsevier B.V 15.02.2020
• Subjects: Flexible; p-n Junction device; Photovoltaic performance; Transparent; p-n Junction device; Flexible; Transparent; Photovoltaic performance

[Display omitted] •The N-doping could regulate the band gap to increase the transmittance.•The N-doping could improve the charge carriers transport and lifetime.•The orderly SnO2 nano-arrays could increase the flexible stability. The flexible-transparent N-doped Cu2O/SnO2 p-n junction film device is...