HfO2 thin films prepared by ion beam assisted deposition

• Published in: Surface & coatings technology Vol. 169-170; pp. 528 - 531
• Main Authors: Mori, Takanori, Fujiwara, Makoto, Manory, Rafael R., Shimizu, Ippei, Tanaka, Takeo, Miyake, Shoji
• Format: Journal Article
• Language: English
• Published: 02.06.2003

Hafnium oxide thin films were prepared using a high-energy ion beam assisted deposition (IBAD) system. Oxygen ion energy was varied the range of 1-20 keV, which is much wider than those in other IBAD works. The transport ratio (TR), defined as the ratio between the hafnium arrival rate and the oxyge...