Effect of Mg addition on the physical properties of aluminum nitride

• Published in: Materials letters Vol. 219; pp. 247 - 250
• Main Authors: Anggraini, Sri Ayu, Uehara, Masato, Yamada, Hiroshi, Akiyama, Morito
• Format: Journal Article
• Language: English
• Published: Amsterdam Elsevier B.V 15.05.2018; Elsevier BV
• Subjects: AlN; Aluminum nitride; Dielectric loss; Dielectrics; Magnesium; Materials science; Mechanical properties; Modulus of elasticity; Permittivity; Physical properties; Piezoelectric material; Piezoelectricity; Relativity; Sputtering; Thin film; Thin films; Piezoelectric material; AlN; Mg; Sputtering; Thin film

•c-Axis oriented AlxMg1-xN thin films were deposited on Si (100) using rf sputtering.•Low Mg doping to AlN enhanced the piezoelectric response up to 7.4 pC/N.•Low Mg addition into AlN could increase the stiffness of the thin film. We are reporting the effect of magnesium (Mg) addition into aluminum...