Effect of Mg addition on the physical properties of aluminum nitride

•c-Axis oriented AlxMg1-xN thin films were deposited on Si (100) using rf sputtering.•Low Mg doping to AlN enhanced the piezoelectric response up to 7.4 pC/N.•Low Mg addition into AlN could increase the stiffness of the thin film. We are reporting the effect of magnesium (Mg) addition into aluminum...

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Published inMaterials letters Vol. 219; pp. 247 - 250
Main Authors Anggraini, Sri Ayu, Uehara, Masato, Yamada, Hiroshi, Akiyama, Morito
Format Journal Article
LanguageEnglish
Published Amsterdam Elsevier B.V 15.05.2018
Elsevier BV
Subjects
AlN
Aluminum nitride
Dielectric loss
Dielectrics
Magnesium
Materials science
Mechanical properties
Modulus of elasticity
Permittivity
Physical properties
Piezoelectric material
Piezoelectricity
Relativity
Sputtering
Thin film
Thin films
Piezoelectric material
AlN
Mg
Sputtering
Thin film
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Abstract •c-Axis oriented AlxMg1-xN thin films were deposited on Si (100) using rf sputtering.•Low Mg doping to AlN enhanced the piezoelectric response up to 7.4 pC/N.•Low Mg addition into AlN could increase the stiffness of the thin film. We are reporting the effect of magnesium (Mg) addition into aluminum nitride (AlN) on piezoelectric and mechanical properties. Addition of 2.5 at.% Mg was found to slightly enhance both the piezoelectric constant (d33) (up to 7.4 pC/N) and the relative permittivity (up to 12). Young’s modulus and hardness were decreased when 2.5 at.% Mg was added into AlN and were slightly increased for sample with 5 at.% Mg addition. The dielectric loss was less than 10−2 for samples with Mg addition lower than 8 at.%. However, higher Mg addition (>8 at.%) led to a lower d33, higher relativity permittivity while decreasing Young’s modulus and hardness.
AbstractList •c-Axis oriented AlxMg1-xN thin films were deposited on Si (100) using rf sputtering.•Low Mg doping to AlN enhanced the piezoelectric response up to 7.4 pC/N.•Low Mg addition into AlN could increase the stiffness of the thin film. We are reporting the effect of magnesium (Mg) addition into aluminum nitride (AlN) on piezoelectric and mechanical properties. Addition of 2.5 at.% Mg was found to slightly enhance both the piezoelectric constant (d33) (up to 7.4 pC/N) and the relative permittivity (up to 12). Young’s modulus and hardness were decreased when 2.5 at.% Mg was added into AlN and were slightly increased for sample with 5 at.% Mg addition. The dielectric loss was less than 10−2 for samples with Mg addition lower than 8 at.%. However, higher Mg addition (>8 at.%) led to a lower d33, higher relativity permittivity while decreasing Young’s modulus and hardness.
We are reporting the effect of magnesium (Mg) addition into aluminum nitride (AlN) on piezoelectric and mechanical properties. Addition of 2.5 at.% Mg was found to slightly enhance both the piezoelectric constant (d33) (up to 7.4 pC/N) and the relative permittivity (up to 12). Young’s modulus and hardness were decreased when 2.5 at.% Mg was added into AlN and were slightly increased for sample with 5 at.% Mg addition. The dielectric loss was less than 10−2 for samples with Mg addition lower than 8 at.%. However, higher Mg addition (>8 at.%) led to a lower d33, higher relativity permittivity while decreasing Young’s modulus and hardness.
Author Akiyama, Morito
Anggraini, Sri Ayu
Yamada, Hiroshi
Uehara, Masato
Author_xml – sequence: 1
  givenname: Sri Ayu
  surname: Anggraini
  fullname: Anggraini, Sri Ayu
  email: ayu-anggraini@aist.go.jp
– sequence: 2
  givenname: Masato
  surname: Uehara
  fullname: Uehara, Masato
– sequence: 3
  givenname: Hiroshi
  surname: Yamada
  fullname: Yamada, Hiroshi
– sequence: 4
  givenname: Morito
  surname: Akiyama
  fullname: Akiyama, Morito
BookMark eNqFkE1LxDAURYOM4Iz6D1wUXLcmTaZtXAgyjh8w4kbBXUjTFyelXyapMP_elLpyoRB4m3Pfyz0rtOj6DhC6IDghmGRXddJK34BPUkyKBKcJ5uQILUmR05jxnC_QMmB5vM7z9xO0cq7GGDOO2RLdbbUG5aNeR88fkawq403fReH5PUTD_uCMkk002H4A6w24iZTN2JpubKPOeGsqOEPHWjYOzn_mKXq7375uHuPdy8PT5nYXK4axj8laqbyEolCl4jnjDAglmEueakZB64ooxjNKaLFWnJaSq1RXDKgseGCzkp6iy3lv-M7nCM6Luh9tF06KFGe0yEJJHqjrmVK2d86CFsp4OdXyVppGECwma6IWszUxWRM4FcFaCLNf4cGaVtrDf7GbOQah_pcBK5wy0CmojA16RdWbvxd8A4Noixs
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ContentType Journal Article
Copyright 2018 Elsevier B.V.
Copyright Elsevier BV May 15, 2018
Copyright_xml – notice: 2018 Elsevier B.V.
– notice: Copyright Elsevier BV May 15, 2018
DBID AAYXX
CITATION
7SR
8BQ
8FD
JG9
DOI 10.1016/j.matlet.2018.02.091
DatabaseName CrossRef
Engineered Materials Abstracts
METADEX
Technology Research Database
Materials Research Database
DatabaseTitle CrossRef
Materials Research Database
Engineered Materials Abstracts
Technology Research Database
METADEX
DatabaseTitleList
Materials Research Database
DeliveryMethod fulltext_linktorsrc
Discipline Engineering
Physics
EISSN 1873-4979
EndPage 250
ExternalDocumentID 10_1016_j_matlet_2018_02_091
S0167577X18303057
GroupedDBID --K
--M
-~X
.~1
0R~
1B1
1~.
1~5
4.4
457
4G.
5GY
5VS
7-5
71M
8P~
9JN
AABNK
AABXZ
AACTN
AAEDT
AAEDW
AAEPC
AAIAV
AAIKJ
AAKOC
AALRI
AAOAW
AAQFI
AAXUO
ABFNM
ABJNI
ABMAC
ABXRA
ABYKQ
ACDAQ
ACGFS
ACIWK
ACRLP
ADBBV
ADEZE
AEBSH
AEKER
AENEX
AEZYN
AFKWA
AFRZQ
AFTJW
AGHFR
AGUBO
AGYEJ
AHHHB
AIEXJ
AIKHN
AITUG
AJBFU
AJOXV
ALMA_UNASSIGNED_HOLDINGS
AMFUW
AMRAJ
AXJTR
BKOJK
BLXMC
CS3
EBS
EFJIC
EFLBG
EJD
EO8
EO9
EP2
EP3
F5P
FDB
FIRID
FNPLU
FYGXN
G-Q
GBLVA
IHE
J1W
KOM
M24
M41
MAGPM
MO0
N9A
O-L
O9-
OAUVE
OZT
P-8
P-9
P2P
PC.
Q38
RIG
RNS
ROL
RPZ
SDF
SDG
SDP
SES
SPC
SPCBC
SPD
SSM
SSZ
T5K
XPP
ZMT
~02
~G-
29M
AATTM
AAXKI
AAYWO
AAYXX
ABXDB
ACNNM
ACVFH
ADCNI
AEIPS
AEUPX
AFJKZ
AFPUW
AGCQF
AGRNS
AIGII
AIIUN
AKBMS
AKRWK
AKYEP
ANKPU
APXCP
ASPBG
AVWKF
AZFZN
BNPGV
CITATION
FEDTE
FGOYB
G-2
HVGLF
HZ~
R2-
SEW
SMS
SSH
WUQ
7SR
8BQ
8FD
AFXIZ
EFKBS
JG9
ID FETCH-LOGICAL-c400t-15cc7be88cbc97494e13109a92f43effd1c49631385c93ba9c2fd4e3a8994e6b3
IEDL.DBID .~1
ISSN 0167-577X
IngestDate Fri Jul 25 04:42:10 EDT 2025
Thu Apr 24 23:07:30 EDT 2025
Tue Jul 01 02:10:53 EDT 2025
Fri Feb 23 02:29:58 EST 2024
IsPeerReviewed true
IsScholarly true
Keywords Piezoelectric material
AlN
Mg
Sputtering
Thin film
Language English
LinkModel DirectLink
MergedId FETCHMERGED-LOGICAL-c400t-15cc7be88cbc97494e13109a92f43effd1c49631385c93ba9c2fd4e3a8994e6b3
Notes ObjectType-Article-1
SourceType-Scholarly Journals-1
ObjectType-Feature-2
content type line 14
PQID 2063861679
PQPubID 2045434
PageCount 4
ParticipantIDs proquest_journals_2063861679
crossref_citationtrail_10_1016_j_matlet_2018_02_091
crossref_primary_10_1016_j_matlet_2018_02_091
elsevier_sciencedirect_doi_10_1016_j_matlet_2018_02_091
ProviderPackageCode CITATION
AAYXX
PublicationCentury 2000
PublicationDate 2018-05-15
PublicationDateYYYYMMDD 2018-05-15
PublicationDate_xml – month: 05
  year: 2018
  text: 2018-05-15
  day: 15
PublicationDecade 2010
PublicationPlace Amsterdam
PublicationPlace_xml – name: Amsterdam
PublicationTitle Materials letters
PublicationYear 2018
Publisher Elsevier B.V
Elsevier BV
Publisher_xml – name: Elsevier B.V
– name: Elsevier BV
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SSID ssj0004904
Score 2.3179927
Snippet •c-Axis oriented AlxMg1-xN thin films were deposited on Si (100) using rf sputtering.•Low Mg doping to AlN enhanced the piezoelectric response up to...
We are reporting the effect of magnesium (Mg) addition into aluminum nitride (AlN) on piezoelectric and mechanical properties. Addition of 2.5 at.% Mg was...
SourceID proquest
crossref
elsevier
SourceType Aggregation Database
Enrichment Source
Index Database
Publisher
StartPage 247
SubjectTerms AlN
Aluminum nitride
Dielectric loss
Dielectrics
Magnesium
Materials science
Mechanical properties
Modulus of elasticity
Permittivity
Physical properties
Piezoelectric material
Piezoelectricity
Relativity
Sputtering
Thin film
Thin films
Title Effect of Mg addition on the physical properties of aluminum nitride
URI https://dx.doi.org/10.1016/j.matlet.2018.02.091
https://www.proquest.com/docview/2063861679
Volume 219
hasFullText 1
inHoldings 1
isFullTextHit
isPrint
link http://utb.summon.serialssolutions.com/2.0.0/link/0/eLvHCXMwnV1bS8MwFA5jIuiD6FSczpEHX-vaJmnTxzEdU9ledLC3kFtlol3Z5dXfbk4v3kAGQl_aJqV8OefkpP3OF4SubBBFVirukZAwj6rCpZj1UslC3ygeSR-qkceTaDSl9zM2a6BBXQsDtMoq9pcxvYjW1ZVehWYvn897j0CgZ3E8c0YJVgsV5ZTGYOXX7180D5r4n_re0Lounys4Xi4pdOgAwYsXyp1J8Nf09CtQF7PP8BAdVGkj7pdvdoQaNmuh_W9igi20W5A59eoY3ZSSxHiR4vEzBsYQoI_d4bI9nFcjg3P4Dr8EQVVoKV2UmmebN-x8fDk39gRNh7dPg5FX7ZbgaeeHay9gWsfKcq6VdouEhNoAVD9lEqaU2DQ1gabO2wLCmU6IkokOU0MtkW7FRW2kyClqZovMniFseEhsxENDfJCbs8roQCmeRsZXTBrWRqQGSehKShx2tHgVNWfsRZTQCoBW-KFw0LaR99krL6U0trSPa_zFD5MQLtpv6dmph0tULrly912oieCv0_m_H3yB9uAM2AMB66Dmermxly4pWatuYXVdtNO_exhNPgChu-Fv
linkProvider Elsevier
linkToHtml http://utb.summon.serialssolutions.com/2.0.0/link/0/eLvHCXMwtV1Lb9NAEB6VoopyQPSBWiiwB3o0sfdhrw8cEKFKadMLrZTb4n24CoIkSlJVvfCn-IPM2OtAkVAlpEo-eR-yvhnPzNrffgvwJmR5HiqrE8GFSqRtXikVkrpSPPVW51VKu5GHZ_ngQn4aqdEa_Oz2whCtMsb-NqY30Tre6UU0e7PxuPeZCPSqKEbolOS1RWRWnoSba1y3Ld4d99HIh5wffTz_MEji0QKJQ6ddJplyrrBBa2cdVtSlDBlJZFYlr6UIde0zJ9E1M6GVK4WtSsdrL4OocHkiQ24FzvsAHkoMF3Rswtsfv3klskxXguL0eN1-vYZUhlUomoMYZbqRCi2zf-XDvzJDk-6OnsKTWKey9y0UW7AWJtvw-A_1wm3YaNijbrED_VYDmU1rNrxkRFEiczO8sLxks-gKbEYf_uek4Eo9KwyL48nVd4ZBZT72YRcu7gXDZ7A-mU7CHjCvuQi55l6kpG8XrHeZtbrOfWpV5dU-iA4k46J2OR2h8c10JLWvpoXWELQm5Qah3YdkNWrWanfc0b_o8De3fNBgerlj5EFnLhNjwALbMbbl9Jvr-X9P_BoeDc6Hp-b0-OzkBWxSC1EXMnUA68v5VXiJFdHSvmo8kMGX-3b5XwxKHWw
openUrl ctx_ver=Z39.88-2004&ctx_enc=info%3Aofi%2Fenc%3AUTF-8&rfr_id=info%3Asid%2Fsummon.serialssolutions.com&rft_val_fmt=info%3Aofi%2Ffmt%3Akev%3Amtx%3Ajournal&rft.genre=article&rft.atitle=Effect+of+Mg+addition+on+the+physical+properties+of+aluminum+nitride&rft.jtitle=Materials+letters&rft.au=Anggraini%2C+Sri+Ayu&rft.au=Uehara%2C+Masato&rft.au=Yamada%2C+Hiroshi&rft.au=Akiyama%2C+Morito&rft.date=2018-05-15&rft.pub=Elsevier+B.V&rft.issn=0167-577X&rft.eissn=1873-4979&rft.volume=219&rft.spage=247&rft.epage=250&rft_id=info:doi/10.1016%2Fj.matlet.2018.02.091&rft.externalDocID=S0167577X18303057
thumbnail_l http://covers-cdn.summon.serialssolutions.com/index.aspx?isbn=/lc.gif&issn=0167-577X&client=summon
thumbnail_m http://covers-cdn.summon.serialssolutions.com/index.aspx?isbn=/mc.gif&issn=0167-577X&client=summon
thumbnail_s http://covers-cdn.summon.serialssolutions.com/index.aspx?isbn=/sc.gif&issn=0167-577X&client=summon