Beyond von-Neumann Computing with Nanoscale Phase-Change Memory Devices
Historically, the application of phase‐change materials and devices has been limited to the provision of non‐volatile memories. Recently, however, the potential has been demonstrated for using phase‐change devices as the basis for new forms of brain‐like computing, by exploiting their multilevel res...
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Published in | Advanced functional materials Vol. 23; no. 18; pp. 2248 - 2254 |
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Main Authors | , , |
Format | Journal Article |
Language | English |
Published |
Weinheim
WILEY-VCH Verlag
13.05.2013
WILEY‐VCH Verlag |
Subjects | |
Online Access | Get full text |
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Abstract | Historically, the application of phase‐change materials and devices has been limited to the provision of non‐volatile memories. Recently, however, the potential has been demonstrated for using phase‐change devices as the basis for new forms of brain‐like computing, by exploiting their multilevel resistance capability to provide electronic mimics of biological synapses. Here, a different and previously under‐explored property that is also intrinsic to phase‐change materials and devices, namely accumulation, is exploited to demonstrate that nanometer‐scale electronic phase‐change devices can also provide a powerful form of arithmetic computing. Complicated arithmetic operations are carried out, including parallel factorization and fractional division, using simple nanoscale phase‐change cells that process and store data simultaneously and at the same physical location, promising a most efficient and effective means for implementing beyond von‐Neumann computing. This same accumulation property can be used to provide a particularly simple form phase‐change integrate‐and‐fire “neuron”, which, by combining both phase‐change synapse and neuron electronic mimics, potentially opens up a route to the realization of all‐phase‐change neuromorphic processing.
Nanometer‐scale GeSbTe phase‐change memory type devices are shown to provide an efficient and effective route to computing in which processing and storage are carried out simultaneously and at the same physical location, circumventing the “von Neumann bottleneck”. Advanced processing including factorization and fractional division are demonstrated, with single GeSbTe cells performing computations that require around 100 transistors in conventional Si processors. |
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AbstractList | Abstract
Historically, the application of phase‐change materials and devices has been limited to the provision of non‐volatile memories. Recently, however, the potential has been demonstrated for using phase‐change devices as the basis for new forms of brain‐like computing, by exploiting their multilevel resistance capability to provide electronic mimics of biological synapses. Here, a different and previously under‐explored property that is also intrinsic to phase‐change materials and devices, namely accumulation, is exploited to demonstrate that nanometer‐scale electronic phase‐change devices can also provide a powerful form of arithmetic computing. Complicated arithmetic operations are carried out, including parallel factorization and fractional division, using simple nanoscale phase‐change cells that process and store data simultaneously and at the same physical location, promising a most efficient and effective means for implementing beyond von‐Neumann computing. This same accumulation property can be used to provide a particularly simple form phase‐change integrate‐and‐fire “neuron”, which, by combining both phase‐change synapse and neuron electronic mimics, potentially opens up a route to the realization of all‐phase‐change neuromorphic processing. Historically, the application of phase-change materials and devices has been limited to the provision of non-volatile memories. Recently, however, the potential has been demonstrated for using phase-change devices as the basis for new forms of brain-like computing, by exploiting their multilevel resistance capability to provide electronic mimics of biological synapses. Here, a different and previously under-explored property that is also intrinsic to phase-change materials and devices, namely accumulation, is exploited to demonstrate that nanometer-scale electronic phase-change devices can also provide a powerful form of arithmetic computing. Complicated arithmetic operations are carried out, including parallel factorization and fractional division, using simple nanoscale phase-change cells that process and store data simultaneously and at the same physical location, promising a most efficient and effective means for implementing beyond von-Neumann computing. This same accumulation property can be used to provide a particularly simple form phase-change integrate-and-fire "neuron", which, by combining both phase-change synapse and neuron electronic mimics, potentially opens up a route to the realization of all-phase-change neuromorphic processing. Nanometer-scale GeSbTe phase-change memory type devices are shown to provide an efficient and effective route to computing in which processing and storage are carried out simultaneously and at the same physical location, circumventing the "von Neumann bottleneck". Advanced processing including factorization and fractional division are demonstrated, with single GeSbTe cells performing computations that require around 100 transistors in conventional Si processors. Historically, the application of phase‐change materials and devices has been limited to the provision of non‐volatile memories. Recently, however, the potential has been demonstrated for using phase‐change devices as the basis for new forms of brain‐like computing, by exploiting their multilevel resistance capability to provide electronic mimics of biological synapses. Here, a different and previously under‐explored property that is also intrinsic to phase‐change materials and devices, namely accumulation, is exploited to demonstrate that nanometer‐scale electronic phase‐change devices can also provide a powerful form of arithmetic computing. Complicated arithmetic operations are carried out, including parallel factorization and fractional division, using simple nanoscale phase‐change cells that process and store data simultaneously and at the same physical location, promising a most efficient and effective means for implementing beyond von‐Neumann computing. This same accumulation property can be used to provide a particularly simple form phase‐change integrate‐and‐fire “neuron”, which, by combining both phase‐change synapse and neuron electronic mimics, potentially opens up a route to the realization of all‐phase‐change neuromorphic processing. Nanometer‐scale GeSbTe phase‐change memory type devices are shown to provide an efficient and effective route to computing in which processing and storage are carried out simultaneously and at the same physical location, circumventing the “von Neumann bottleneck”. Advanced processing including factorization and fractional division are demonstrated, with single GeSbTe cells performing computations that require around 100 transistors in conventional Si processors. |
Author | Wright, C. David Diosdado, Jorge A. Vazquez Hosseini, Peiman |
Author_xml | – sequence: 1 givenname: C. David surname: Wright fullname: Wright, C. David email: david.wright@exeter.ac.uk organization: College of Engineering, Mathematics and Physical Sciences, University of Exeter, Exeter EX4 4QF, UK – sequence: 2 givenname: Peiman surname: Hosseini fullname: Hosseini, Peiman organization: College of Engineering, Mathematics and Physical Sciences, University of Exeter, Exeter EX4 4QF, UK – sequence: 3 givenname: Jorge A. Vazquez surname: Diosdado fullname: Diosdado, Jorge A. Vazquez organization: College of Engineering, Mathematics and Physical Sciences, University of Exeter, Exeter EX4 4QF, UK |
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Snippet | Historically, the application of phase‐change materials and devices has been limited to the provision of non‐volatile memories. Recently, however, the... Abstract Historically, the application of phase‐change materials and devices has been limited to the provision of non‐volatile memories. Recently, however, the... Historically, the application of phase-change materials and devices has been limited to the provision of non-volatile memories. Recently, however, the... |
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SubjectTerms | Arithmetic chalcogenides Computation Devices Electronics Nanomaterials Nanostructure neuromorphic non-von Neumann phase-change computing phase-change materials phase-change memories Position (location) Synapses |
Title | Beyond von-Neumann Computing with Nanoscale Phase-Change Memory Devices |
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