Characterization of Leakage and Reliability of SiNx Gate Dielectric by Low-Pressure Chemical Vapor Deposition for GaN-based MIS-HEMTs - Mengyuan Hua; Cheng Liu; Shu Yang; Shenghou Liu; Kai Fu; Zhihua Dong; Yong Cai; Baoshun Zhang; Chen, Kevin J. (IEEE transactions on electron devices, 2015)
Keywords: Aluminum gallium nitride; Dielectrics; Electric breakdown; Gallium nitride; gate dielectric; Leakage currents; Logic gates; low-pressure chemical vapor deposition (LPCVD); silicon nitride; Wide band gap semiconductors; silicon nitride; Gallium nitride; low-pressure chemical vapor deposition (LPCVD); gate dielectric