Characterization of Leakage and Reliability of SiNx Gate Dielectric by Low-Pressure Chemical Vapor Deposition for GaN-based MIS-HEMTs
In this paper, we systematically investigated the leakage and breakdown mechanisms of the low-pressure chemical vapor deposition (LPCVD) silicon nitride thin film deposited on AlGaN/GaN heterostructures. The LPCVD-SiN x gate dielectric exhibits low leakage and high breakdown electric field. The domi...
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| Published in | IEEE transactions on electron devices Vol. 62; no. 10; pp. 3215 - 3222 |
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| Main Authors | , , , , , , , , |
| Format | Journal Article |
| Language | English |
| Published |
IEEE
01.10.2015
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| Abstract | In this paper, we systematically investigated the leakage and breakdown mechanisms of the low-pressure chemical vapor deposition (LPCVD) silicon nitride thin film deposited on AlGaN/GaN heterostructures. The LPCVD-SiN x gate dielectric exhibits low leakage and high breakdown electric field. The dominant mechanism of the leakage current through LPCVD-SiN x gate dielectric is identified to be Poole-Frenkel emission at low electric field and Fowler-Nordheim tunneling at high electric field. Both electric-field-accelerated and temperature-accelerated time-dependent dielectric breakdown of the LPCVD-SiN x gate dielectric were also investigated. |
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| AbstractList | In this paper, we systematically investigated the leakage and breakdown mechanisms of the low-pressure chemical vapor deposition (LPCVD) silicon nitride thin film deposited on AlGaN/GaN heterostructures. The LPCVD-SiN x gate dielectric exhibits low leakage and high breakdown electric field. The dominant mechanism of the leakage current through LPCVD-SiN x gate dielectric is identified to be Poole-Frenkel emission at low electric field and Fowler-Nordheim tunneling at high electric field. Both electric-field-accelerated and temperature-accelerated time-dependent dielectric breakdown of the LPCVD-SiN x gate dielectric were also investigated. |
| Author | Zhihua Dong Shenghou Liu Mengyuan Hua Yong Cai Chen, Kevin J. Baoshun Zhang Cheng Liu Shu Yang Kai Fu |
| Author_xml | – sequence: 1 surname: Mengyuan Hua fullname: Mengyuan Hua email: mhua@ust.hk organization: Dept. of Electron. & Comput. Eng., Hong Kong Univ. of Sci. & Technol., Hong Kong, China – sequence: 2 surname: Cheng Liu fullname: Cheng Liu email: cliuad@ust.hk organization: Dept. of Electron. & Comput. Eng., Hong Kong Univ. of Sci. & Technol., Hong Kong, China – sequence: 3 surname: Shu Yang fullname: Shu Yang email: eesyang@connect.ust.hk organization: Dept. of Electron. & Comput. Eng., Hong Kong Univ. of Sci. & Technol., Hong Kong, China – sequence: 4 surname: Shenghou Liu fullname: Shenghou Liu email: sliuac@ust.hk organization: Dept. of Electron. & Comput. Eng., Hong Kong Univ. of Sci. & Technol., Hong Kong, China – sequence: 5 surname: Kai Fu fullname: Kai Fu email: kfu2009@sinano.ac.cn organization: Suzhou Inst. of Nano-Tech & Nano-Bionics, Suzhou, China – sequence: 6 surname: Zhihua Dong fullname: Zhihua Dong email: zhdong2011@sinano.ac.cn organization: Suzhou Inst. of Nano-Tech & Nano-Bionics, Suzhou, China – sequence: 7 surname: Yong Cai fullname: Yong Cai email: ycai2008@sinano.ac.cn organization: Suzhou Inst. of Nano-Tech & Nano-Bionics, Suzhou, China – sequence: 8 surname: Baoshun Zhang fullname: Baoshun Zhang email: bszhang2006@sinano.ac.cn organization: Suzhou Inst. of Nano-Tech & Nano-Bionics, Suzhou, China – sequence: 9 givenname: Kevin J. surname: Chen fullname: Chen, Kevin J. email: eekjchen@ust.hk organization: Dept. of Electron. & Comput. Eng., Hong Kong Univ. of Sci. & Technol., Hong Kong, China |
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| Keywords | silicon nitride Gallium nitride low-pressure chemical vapor deposition (LPCVD) gate dielectric |
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| SubjectTerms | Aluminum gallium nitride Dielectrics Electric breakdown Gallium nitride gate dielectric Leakage currents Logic gates low-pressure chemical vapor deposition (LPCVD) silicon nitride Wide band gap semiconductors |
| Title | Characterization of Leakage and Reliability of SiNx Gate Dielectric by Low-Pressure Chemical Vapor Deposition for GaN-based MIS-HEMTs |
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