A Monolithically-Integrated Optical Receiver in Standard 45-nm SOI
Integrated photonics has emerged as an I/O technology that can meet the throughput demands of future many-core processors. Taking advantage of the low capacitance environment provided by monolithic integration, we developed an integrating receiver front-end built directly into a clocked comparator,...
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Published in | IEEE journal of solid-state circuits Vol. 47; no. 7; pp. 1693 - 1702 |
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Main Authors | , , , |
Format | Journal Article Conference Proceeding |
Language | English |
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New York, NY
IEEE
01.07.2012
Institute of Electrical and Electronics Engineers The Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
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Abstract | Integrated photonics has emerged as an I/O technology that can meet the throughput demands of future many-core processors. Taking advantage of the low capacitance environment provided by monolithic integration, we developed an integrating receiver front-end built directly into a clocked comparator, achieving high sensitivity and energy-efficiency. A simple model of the receiver provides intuition on the effects of wiring and photodiode capacitance, and leads to a photodiode-splitting technique enabling improved sensitivity at higher data rates. The receiver is characterized in situ and shown to operate with μA-sensitivity at 3.5 Gb/s with a power consumption of 180 μ W (52 fJ/bit) and area of 108 μm 2 . This work demonstrates that photonics and electronics can be jointly integrated in a standard 45-nm SOI process. |
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AbstractList | Integrated photonics has emerged as an I/O technology that can meet the throughput demands of future many-core processors. Taking advantage of the low capacitance environment provided by monolithic integration, we developed an integrating receiver front-end built directly into a clocked comparator, achieving high sensitivity and energy-efficiency. A simple model of the receiver provides intuition on the effects of wiring and photodiode capacitance, and leads to a photodiode-splitting technique enabling improved sensitivity at higher data rates. The receiver is characterized in situ and shown to operate with [Formula Omitted]A-sensitivity at 3.5 Gb/s with a power consumption of 180 [Formula Omitted]W (52 fJ/bit) and area of 108 [Formula Omitted]m[Formula Omitted]. This work demonstrates that photonics and electronics can be jointly integrated in a standard 45-nm SOI process. Integrated photonics has emerged as an I/O technology that can meet the throughput demands of future many-core processors. Taking advantage of the low capacitance environment provided by monolithic integration, we developed an integrating receiver front-end built directly into a clocked comparator, achieving high sensitivity and energy-efficiency. A simple model of the receiver provides intuition on the effects of wiring and photodiode capacitance, and leads to a photodiode-splitting technique enabling improved sensitivity at higher data rates. The receiver is characterized in situ and shown to operate with μA-sensitivity at 3.5 Gb/s with a power consumption of 180 μ W (52 fJ/bit) and area of 108 μm 2 . This work demonstrates that photonics and electronics can be jointly integrated in a standard 45-nm SOI process. Integrated photonics has emerged as an I/O technology that can meet the throughput demands of future many-core processors. Taking advantage of the low capacitance environment provided by monolithic integration, we developed an integrating receiver front-end built directly into a clocked comparator, achieving high sensitivity and energy-efficiency. A simple model of the receiver provides intuition on the effects of wiring and photodiode capacitance, and leads to a photodiode-splitting technique enabling improved sensitivity at higher data rates. The receiver is characterized in situ and shown to operate with mu A-sensitivity at 3.5 Gb/s with a power consumption of 180 mu W (52 fJ/bit) and area of 108 mu m 2 . This work demonstrates that photonics and electronics can be jointly integrated in a standard 45-nm SOI process. |
Author | Ram, R. J. Georgas, M. Orcutt, J. Stojanovic, V. |
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Keywords | Integrated optics multi-core sense-amplifiers Processor In situ monolithic integration many-core Clock Photonics Wiring Silicon on insulator technology User interface Energetic efficiency High sensitivity Transimpedance Optoelectronic device Electric power consumption Optical receiver transimpedance amplifiers Comparator circuit Monolithic integrated circuit integrating receivers Operational amplifier high-speed I/O chip-to-chip links Photodiode SOI interconnect Sense amplifier Interconnection Integrated circuit Capacitance |
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SubjectTerms | Applied sciences Bandwidth Capacitance chip-to-chip links Circuit properties Circuits Clocks Design. Technologies. Operation analysis. Testing Electric, optical and optoelectronic circuits Electronics Exact sciences and technology Hardware high-speed I/O Input-output equipment Integrated circuits Integrated circuits by function (including memories and processors) Integrated optics. Optical fibers and wave guides integrating receivers interconnect many-core monolithic integration multi-core Optical and optoelectronic circuits Optical receivers Optical sensors Photodiodes Photonics Power consumption Receivers Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices sense-amplifiers Sensitivity SOI transimpedance amplifiers |
Title | A Monolithically-Integrated Optical Receiver in Standard 45-nm SOI |
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