Coupled drift-diffusion/quantum transmitting boundary method simulations of thin oxide devices with specific application to a silicon based tunnel switch diode

We present a method of coupling drift-diffusion simulations with quantum transmitting boundary method (QTBM) tunnel current calculations. This allows self-consistent simulation of thin oxide devices in which large tunnel currents can flow. Simulated results are presented for a thin oxide Al/SiO/sub...

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Bibliographic Details
Published inIEEE transactions on electron devices Vol. 47; no. 5; pp. 1052 - 1060
Main Authors Daniel, E.S., Cartoixa, X., Frensley, W.R., Ting, D.Z.-Y., McGill, T.C.
Format Journal Article
LanguageEnglish
Published New York IEEE 01.05.2000
The Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subjects
Aluminum
Boundaries
Devices
Diffusion processes
Diodes
Oxides
Simulation
Transmission
Tunnels (transportation)
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Summary:We present a method of coupling drift-diffusion simulations with quantum transmitting boundary method (QTBM) tunnel current calculations. This allows self-consistent simulation of thin oxide devices in which large tunnel currents can flow. Simulated results are presented for a thin oxide Al/SiO/sub 2//Si structure and an Al/SiO/sub 2//n-Si/p-Si tunnel switching diode. We demonstrate the careful use of the recombination lifetime as an adjustable or relaxable parameter in order to obtain converging solutions.
Bibliography:ObjectType-Article-2
SourceType-Scholarly Journals-1
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content type line 23
ISSN:0018-9383
1557-9646
DOI:10.1109/16.841240