The Lithographic Performance and Contamination Resistance of a New Family of Chemically Amplified DUV Photoresists
A new contamination resistant 248nm DUV resist (ESCAP-E) has been developed to alleviate the difficulties encountered with the environmental contamination sensitivity of chemically amplified DUV photoresists. The formulation and processing of ESCAP-I; have been designed to permit thermal annealing o...
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Published in | Journal of Photopolymer Science and Technology Vol. 7; no. 3; pp. 449 - 460 |
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Main Authors | , , , , , , |
Format | Journal Article |
Language | English |
Published |
Hiratsuka
The Society of Photopolymer Science and Technology(SPST)
1994
Japan Science and Technology Agency |
Online Access | Get full text |
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