Sputtering yields of magnesium hydroxide [Mg(OH)2] by noble-gas ion bombardment

Magnesium oxide (MgO) is widely used for barrier coating of plasma display panel (PDP) cells and its resistance against ion sputtering is a critical issue for the prolongation of lifetime of PDPs. The top surface of an MgO barrier coat may be hydrated to form a thin layer of magnesium hydroxide [Mg(...

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Published inJournal of physics. D, Applied physics Vol. 45; no. 43; pp. 432001 - 1-5
Main Authors Ikuse, Kazumasa, Yoshimura, Satoru, Kiuchi, Masato, Terauchi, Masaharu, Nishitani, Mikihiko, Hamaguchi, Satoshi
Format Journal Article
LanguageEnglish
Published IOP Publishing 31.10.2012
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Abstract Magnesium oxide (MgO) is widely used for barrier coating of plasma display panel (PDP) cells and its resistance against ion sputtering is a critical issue for the prolongation of lifetime of PDPs. The top surface of an MgO barrier coat may be hydrated to form a thin layer of magnesium hydroxide [Mg(OH)2] due to moisture inadvertently contained in the gas of the PDP cell. In this study, sputtering yields of Mg(OH)2 by low-energy noble-gas ion bombardment have been evaluated experimentally with the use of a mass-selected ion beam system and compared with those of MgO. It has been found that the etched depths of Mg(OH)2 and MgO are nearly equal when they are subject to the same noble-gas ion bombardment conditions.
AbstractList Magnesium oxide (MgO) is widely used for barrier coating of plasma display panel (PDP) cells and its resistance against ion sputtering is a critical issue for the prolongation of lifetime of PDPs. The top surface of an MgO barrier coat may be hydrated to form a thin layer of magnesium hydroxide [Mg(OH) 2 ] due to moisture inadvertently contained in the gas of the PDP cell. In this study, sputtering yields of Mg(OH) 2 by low-energy noble-gas ion bombardment have been evaluated experimentally with the use of a mass-selected ion beam system and compared with those of MgO. It has been found that the etched depths of Mg(OH) 2 and MgO are nearly equal when they are subject to the same noble-gas ion bombardment conditions.
Magnesium oxide (MgO) is widely used for barrier coating of plasma display panel (PDP) cells and its resistance against ion sputtering is a critical issue for the prolongation of lifetime of PDPs. The top surface of an MgO barrier coat may be hydrated to form a thin layer of magnesium hydroxide [Mg(OH) sub(2)] due to moisture inadvertently contained in the gas of the PDP cell. In this study, sputtering yields of Mg(OH) sub(2) by low-energy noble-gas ion bombardment have been evaluated experimentally with the use of a mass-selected ion beam system and compared with those of MgO. It has been found that the etched depths of Mg(OH) sub(2) and MgO are nearly equal when they are subject to the same noble-gas ion bombardment conditions.
Magnesium oxide (MgO) is widely used for barrier coating of plasma display panel (PDP) cells and its resistance against ion sputtering is a critical issue for the prolongation of lifetime of PDPs. The top surface of an MgO barrier coat may be hydrated to form a thin layer of magnesium hydroxide [Mg(OH)2] due to moisture inadvertently contained in the gas of the PDP cell. In this study, sputtering yields of Mg(OH)2 by low-energy noble-gas ion bombardment have been evaluated experimentally with the use of a mass-selected ion beam system and compared with those of MgO. It has been found that the etched depths of Mg(OH)2 and MgO are nearly equal when they are subject to the same noble-gas ion bombardment conditions.
Author Hamaguchi, Satoshi
Kiuchi, Masato
Terauchi, Masaharu
Yoshimura, Satoru
Ikuse, Kazumasa
Nishitani, Mikihiko
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Snippet Magnesium oxide (MgO) is widely used for barrier coating of plasma display panel (PDP) cells and its resistance against ion sputtering is a critical issue for...
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iop
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StartPage 432001
SubjectTerms Barriers
Coating
Ion bombardment
Magnesium hydroxide
Magnesium oxide
Plasma (physics)
Sputtering
Thin films
Title Sputtering yields of magnesium hydroxide [Mg(OH)2] by noble-gas ion bombardment
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