Surface planarization effect of siloxane derivatives in organic semiconductor layers

• Published in: Thin solid films Vol. 597; pp. 212 - 219
• Main Authors: Sakanoue, Kei, Harada, Hironobu, Ando, Kento, Yahiro, Masayuki, Fukai, Jun
• Format: Journal Article
• Language: English
• Published: Elsevier B.V 31.12.2015
• Subjects: Banks; Contact angle; Film morphology; Indium tin oxide; Molecular structure; Organic light emitting diodes; Organic semiconductors; Planarization; Scanning electron microscopy; Siloxanes; Solution process; Surface control additives; Thin films; Surface control additives; Organic light emitting diodes; Planarization; Solution process; Film morphology

The ability of siloxane surface control additives (SCAs) to planarize organic semiconductor films with a thickness of tens of nanometers printed on indium tin oxide (ITO) surfaces with stripe-patterned bank structures using a liquid-phase method is demonstrated. Three types of SCAs with different mo...