Low Temperature Growth of Single-walled Carbon Nanotube Forest

Forest of single-walled carbon nanotubes (SWNTs) was grown at 450 oC by water-plasma chemical vapor deposition using ultrathin iron on alumina supporting film. The growth rate of the SWNT forest is ~ 0.9 μm/min, and the diameters of nanotubes are mainly in a range of 3.0 ~ 3.5 nm. The low intensity...

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Published inBulletin of the Korean Chemical Society Vol. 31; no. 10; pp. 2819 - 2822
Main Authors Lee, Il-Ha, Im, Ji-Woon, Kim, Un-Jeong, Bae, Eun-Ju, Kim, Kyoung-Kook, Lee, Eun-Hong, Lee, Young-Hee, Hong, Seung-Hun, Min, Yo-Sep
Format Journal Article
LanguageEnglish
Published 대한화학회 20.10.2010
Subjects
화학
Online AccessGet full text
ISSN0253-2964
1229-5949
DOI10.5012/bkcs.2010.31.10.2819

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Abstract Forest of single-walled carbon nanotubes (SWNTs) was grown at 450 oC by water-plasma chemical vapor deposition using ultrathin iron on alumina supporting film. The growth rate of the SWNT forest is ~ 0.9 μm/min, and the diameters of nanotubes are mainly in a range of 3.0 ~ 3.5 nm. The low intensity ratio of D- to G-band (ID/IG ~ 0.098) in Raman spectra indicates that our SWNT forest grown at 450 oC is fairly pure and crystalline. This low temperature growth of SWNT forest may enable variable applications requiring the vertically-aligned nanotubes to obtain large surface area. KCI Citation Count: 7
AbstractList Forest of single-walled carbon nanotubes (SWNTs) was grown at 450 oC by water-plasma chemical vapor deposition using ultrathin iron on alumina supporting film. The growth rate of the SWNT forest is ~ 0.9 μm/min, and the diameters of nanotubes are mainly in a range of 3.0 ~ 3.5 nm. The low intensity ratio of D- to G-band (ID/IG ~ 0.098) in Raman spectra indicates that our SWNT forest grown at 450 oC is fairly pure and crystalline. This low temperature growth of SWNT forest may enable variable applications requiring the vertically-aligned nanotubes to obtain large surface area. KCI Citation Count: 7
Author Lee, Eun-Hong
Min, Yo-Sep
Bae, Eun-Ju
Kim, Kyoung-Kook
Lee, Il-Ha
Hong, Seung-Hun
Kim, Un-Jeong
Lee, Young-Hee
Im, Ji-Woon
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CitedBy_id crossref_primary_10_1038_srep16612
crossref_primary_10_1088_0022_3727_48_4_045201
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Cites_doi 10.1103/PhysRevLett.95.056104
10.1126/science.1104962
10.1088/0957-4484/18/1/015601
10.1021/jp067776s
10.1021/nl060068y
10.1143/JJAP.44.1558
10.1021/cm050889o
10.1088/0957-4484/17/1/019
10.1073/pnas.0507064102
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