p-AlInN electron blocking layer for AlGaN-based deep-ultraviolet light-emitting diode

• Published in: Superlattices and Microstructures Vol. 158; p. 107022
• Main Authors: Sharif, Muhammad Nawaz, Niass, Mussaab Ibrahim, Liou, Juin J., Wang, Fang, Liu, Yuhuai
• Format: Journal Article
• Language: English; Japanese
• Published: Elsevier Ltd 01.10.2021; Elsevier BV
• Subjects: AlInN; Electron blocking layer; Light-emitting diode; Superlattice electron blocking layer; Electron blocking layer; AlInN; Superlattice electron blocking layer; Light-emitting diode

Commonly, the Al-rich AlGaN layer acts as electron blocking layer (EBL) to block the overflow of electrons from the active region in conventional AlGaN deep-ultraviolet (DUV) light-emitting diode (LED). However, the Al-rich AlGaN layer leads to the disadvantages of severe electron overflow and hole...