The effect of oxide layer vacancies on switching behavior in oxide resistive devices

• Published in: Electronic materials letters Vol. 10; no. 1; pp. 57 - 60
• Main Authors: Choi, Sang-jun, Kim, Ki-Hong, Yang, Woo-young, Lee, Hyung-IK, Cho, Soohaeng
• Format: Journal Article
• Language: English
• Published: Dordrecht Springer Netherlands 01.01.2014; 대한금속·재료학회
• Subjects: Characterization and Evaluation of Materials; Chemistry and Materials Science; Condensed Matter Physics; COPPER OXIDE; Density; Devices; ELECTRICAL CONDUCTIVITY; Electronic materials; ELECTRONIC PRODUCTS; Materials Science; Nanotechnology; Nanotechnology and Microengineering; Optical and Electronic Materials; OXIDES; Platinum; Switching; VACANCIES; 전자/정보통신공학; copper oxide; multi-bit operation; vacancy; oxide resistive switching memory
• ISSN: 1738-8090; 2093-6788
• DOI: 10.1007/s13391-013-3001-x

A high on/off ratio in oxide resistive devices is preferable for use in memory storage, especially when multibit operations are possible. Here, we demonstrate the effect of vacancy density on resistance by using three different Pt-copper oxide-W devices with different vacancy densities in the oxide layer. We show that a higher vacancy density in the oxide layer can enhance the on/off resistance ratio and demonstrate the advantage of this ratio in the realization of multi-bit operation. Finally, we successfully explain the impact of the vacancy density in the oxide layer using a simple model.