Vertical InGaN-based green-band solar cells operating under high solar concentration up to 300 suns

InGaN/GaN-based solar cells with vertical-conduction feature on silicon substrates were fabricated by wafer bonding technique. The vertical solar cells with a metal reflector sandwiched between the GaN-based epitaxial layers and the Si substrate could increase the effective thickness of the absorpti...

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Published inOptics express Vol. 22 Suppl 5; no. S5; pp. A1222 - A1228
Main Authors Sheu, Jinn-Kong, Chen, Fu-Bang, Wu, Shou-Hung, Lee, Ming-Lun, Chen, Po-Cheng, Yeh, Yu-Hsiang
Format Journal Article
LanguageEnglish
Published United States 25.08.2014
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Abstract InGaN/GaN-based solar cells with vertical-conduction feature on silicon substrates were fabricated by wafer bonding technique. The vertical solar cells with a metal reflector sandwiched between the GaN-based epitaxial layers and the Si substrate could increase the effective thickness of the absorption layer. Given that the thermally resistive sapphire substrates were replaced by the Si substrate with high thermal conductivity, the solar cells did not show degradation in power conversion efficiency (PCE) even when the solar concentrations were increased to 300 suns. The open circuit voltage increased from 1.90 V to 2.15 V and the fill factor increased from 0.55 to 0.58 when the concentrations were increased from 1 sun to 300 suns. With the 300-sun illumination, the PCE was enhanced by approximately 33% compared with the 1-sun illumination.
AbstractList InGaN/GaN-based solar cells with vertical-conduction feature on silicon substrates were fabricated by wafer bonding technique. The vertical solar cells with a metal reflector sandwiched between the GaN-based epitaxial layers and the Si substrate could increase the effective thickness of the absorption layer. Given that the thermally resistive sapphire substrates were replaced by the Si substrate with high thermal conductivity, the solar cells did not show degradation in power conversion efficiency (PCE) even when the solar concentrations were increased to 300 suns. The open circuit voltage increased from 1.90 V to 2.15 V and the fill factor increased from 0.55 to 0.58 when the concentrations were increased from 1 sun to 300 suns. With the 300-sun illumination, the PCE was enhanced by approximately 33% compared with the 1-sun illumination.
Author Wu, Shou-Hung
Chen, Fu-Bang
Sheu, Jinn-Kong
Chen, Po-Cheng
Yeh, Yu-Hsiang
Lee, Ming-Lun
Author_xml – sequence: 1
  givenname: Jinn-Kong
  surname: Sheu
  fullname: Sheu, Jinn-Kong
– sequence: 2
  givenname: Fu-Bang
  surname: Chen
  fullname: Chen, Fu-Bang
– sequence: 3
  givenname: Shou-Hung
  surname: Wu
  fullname: Wu, Shou-Hung
– sequence: 4
  givenname: Ming-Lun
  surname: Lee
  fullname: Lee, Ming-Lun
– sequence: 5
  givenname: Po-Cheng
  surname: Chen
  fullname: Chen, Po-Cheng
– sequence: 6
  givenname: Yu-Hsiang
  surname: Yeh
  fullname: Yeh, Yu-Hsiang
BackLink https://www.ncbi.nlm.nih.gov/pubmed/25322176$$D View this record in MEDLINE/PubMed
BookMark eNpNkD1PwzAQhi1URD9gY0YeGUg52_nyWFWlVKroAqyW41zaoNQudjLw72nUFjHdK92jV3fPmAyss0jIPYMpE2n87HDK-RQ045xfkREDGUcx5NngXx6ScQhfACzOZHZDhjwRnLMsHRHzib6tjW7oyi71W1TogCXdekR7zLakwTXaU4NNE6g7oNdtbbe0syV6uqu3uwvgrEHb9mtnaXegraMCgIbOhltyXekm4N15TsjHy-J9_hqtN8vVfLaOjJBJG-UyZ8xwDpjg8Zk8kQxECQVUIHJT5ihRQ5UVrNCaZYlOuJaVBKnLLDc5E2JCHk-9B---Owyt2tehv1xbdF1QLGVCxjxOe_TphBrvQvBYqYOv99r_KAaq16o2C8W5glmv9Yg_nJu7Yo_lH3zxKH4BQaNztQ
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ContentType Journal Article
DBID NPM
AAYXX
CITATION
7X8
DOI 10.1364/oe.22.0a1222
DatabaseName PubMed
CrossRef
MEDLINE - Academic
DatabaseTitle PubMed
CrossRef
MEDLINE - Academic
DatabaseTitleList MEDLINE - Academic
PubMed
Database_xml – sequence: 1
  dbid: NPM
  name: PubMed
  url: https://proxy.k.utb.cz/login?url=http://www.ncbi.nlm.nih.gov/entrez/query.fcgi?db=PubMed
  sourceTypes: Index Database
DeliveryMethod fulltext_linktorsrc
Discipline Physics
EISSN 1094-4087
EndPage A1228
ExternalDocumentID 10_1364_OE_22_0A1222
25322176
Genre Research Support, Non-U.S. Gov't
Journal Article
GroupedDBID ---
123
29N
2WC
8SL
AAWJZ
ACGFO
ADBBV
AENEX
AKGWG
ALMA_UNASSIGNED_HOLDINGS
ATHME
AYPRP
AZSQR
AZYMN
BAWUL
BCNDV
CS3
DIK
DSZJF
DU5
E3Z
EBS
EJD
F5P
GROUPED_DOAJ
GX1
KQ8
M~E
NPM
OFLFD
OK1
OPJBK
OPLUZ
P2P
RNS
ROL
ROP
ROS
TR2
TR6
XSB
AAYXX
CITATION
7X8
ID FETCH-LOGICAL-c395t-89811c220e5e122859103d0b0f038cd8e9ea0f7b1baa175a52a9f909ad78c8133
ISSN 1094-4087
IngestDate Thu Apr 11 17:44:35 EDT 2024
Wed Aug 07 14:06:36 EDT 2024
Thu May 23 23:20:22 EDT 2024
IsDoiOpenAccess false
IsOpenAccess true
IsPeerReviewed true
IsScholarly true
Issue S5
Language English
LinkModel OpenURL
MergedId FETCHMERGED-LOGICAL-c395t-89811c220e5e122859103d0b0f038cd8e9ea0f7b1baa175a52a9f909ad78c8133
Notes ObjectType-Article-1
SourceType-Scholarly Journals-1
ObjectType-Feature-2
content type line 23
OpenAccessLink https://doi.org/10.1364/oe.22.0a1222
PMID 25322176
PQID 1613942463
PQPubID 23479
ParticipantIDs proquest_miscellaneous_1613942463
crossref_primary_10_1364_OE_22_0A1222
pubmed_primary_25322176
PublicationCentury 2000
PublicationDate 2014-08-25
PublicationDateYYYYMMDD 2014-08-25
PublicationDate_xml – month: 08
  year: 2014
  text: 2014-08-25
  day: 25
PublicationDecade 2010
PublicationPlace United States
PublicationPlace_xml – name: United States
PublicationTitle Optics express
PublicationTitleAlternate Opt Express
PublicationYear 2014
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SSID ssj0014797
Score 2.3034575
Snippet InGaN/GaN-based solar cells with vertical-conduction feature on silicon substrates were fabricated by wafer bonding technique. The vertical solar cells with a...
SourceID proquest
crossref
pubmed
SourceType Aggregation Database
Index Database
StartPage A1222
Title Vertical InGaN-based green-band solar cells operating under high solar concentration up to 300 suns
URI https://www.ncbi.nlm.nih.gov/pubmed/25322176
https://search.proquest.com/docview/1613942463
Volume 22 Suppl 5
hasFullText 1
inHoldings 1
isFullTextHit
isPrint
link http://utb.summon.serialssolutions.com/2.0.0/link/0/eLvHCXMwnV1Lj9MwELZgERIXxJsusDISnCKX-JGHjwtqqaCPAy30FjmJs3BJom0irTjw2xk7bhKkRVq4RInljJL5nHllZozQG2a0WkopSSNVENC3mqRFQAlNCy01jXNp2xev1uFiJz7tg_2wvZWtLmnSafbz2rqS_0EVxgBXUyX7D8j2RGEAzgFfOALCcLwRxl9tUrTtlvFRrYnRSLl3YTJp4NwGxE2OqYnNH7yqNu2TTWDAlI1deqZP8XGCKV0sXf9cr62NPcp93zu0LpTnjNdNbXs666u6z9vomju2di38KEvyuXKa0GYMdCJt3pL3ahj-Zmd_-V61ZNEOwy4jaAVPSJZtOY5GUGHCq13l8lR3EhT8RXBKnRZ1IpYxz25S6gUjWXlOWVeS7BSvuY6vleo8FADFZjZlbOqPbhs3z15vkvluuUy2s_32NrrDIhmYDM_Vr1n_U0lEMnK1D0Dx3Zjen1bJX1wNa3JsH6D7zlfA5x3wD9EtXT5Cd23ObnZ4jLIj_HgEPx7gxxZdbOHHPfzYwo8N_McJY_hxW-OmwgA_NvA_Qbv5bPthQdyeGSTjMmhILGNKM8Z8HWjDzwDMQZ77qV_4PM7yGD5A5RdRSlOlwHJUAVOykL5UeRRnMeX8KTopq1I_RzhVsWJmAwAtuGBZILmK8kwLFUslgN4EvT3yLKm71iiJ_T8aimQzSxhLOt5O0OsjQxOQXeatVamr9pCAt8GlYCLkE_Ss43RPiQWgamgUnt7g7hfo3rAWX6KT5rLVr8BWbNIzG2M5s-vgN9eNa44
link.rule.ids 315,786,790,870,27955,27956
linkProvider ISSN International Centre
openUrl ctx_ver=Z39.88-2004&ctx_enc=info%3Aofi%2Fenc%3AUTF-8&rfr_id=info%3Asid%2Fsummon.serialssolutions.com&rft_val_fmt=info%3Aofi%2Ffmt%3Akev%3Amtx%3Ajournal&rft.genre=article&rft.atitle=Vertical+InGaN-based+green-band+solar+cells+operating+under+high+solar+concentration+up+to+300+suns&rft.jtitle=Optics+express&rft.au=Sheu%2C+Jinn-Kong&rft.au=Chen%2C+Fu-Bang&rft.au=Wu%2C+Shou-Hung&rft.au=Lee%2C+Ming-Lun&rft.date=2014-08-25&rft.eissn=1094-4087&rft.volume=22+Suppl+5&rft.spage=A1222&rft.epage=A1228&rft_id=info:doi/10.1364%2FOE.22.0A1222&rft.externalDBID=NO_FULL_TEXT
thumbnail_l http://covers-cdn.summon.serialssolutions.com/index.aspx?isbn=/lc.gif&issn=1094-4087&client=summon
thumbnail_m http://covers-cdn.summon.serialssolutions.com/index.aspx?isbn=/mc.gif&issn=1094-4087&client=summon
thumbnail_s http://covers-cdn.summon.serialssolutions.com/index.aspx?isbn=/sc.gif&issn=1094-4087&client=summon