Vertical InGaN-based green-band solar cells operating under high solar concentration up to 300 suns

InGaN/GaN-based solar cells with vertical-conduction feature on silicon substrates were fabricated by wafer bonding technique. The vertical solar cells with a metal reflector sandwiched between the GaN-based epitaxial layers and the Si substrate could increase the effective thickness of the absorpti...

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Published inOptics express Vol. 22 Suppl 5; no. S5; pp. A1222 - A1228
Main Authors Sheu, Jinn-Kong, Chen, Fu-Bang, Wu, Shou-Hung, Lee, Ming-Lun, Chen, Po-Cheng, Yeh, Yu-Hsiang
Format Journal Article
LanguageEnglish
Published United States 25.08.2014
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Summary:InGaN/GaN-based solar cells with vertical-conduction feature on silicon substrates were fabricated by wafer bonding technique. The vertical solar cells with a metal reflector sandwiched between the GaN-based epitaxial layers and the Si substrate could increase the effective thickness of the absorption layer. Given that the thermally resistive sapphire substrates were replaced by the Si substrate with high thermal conductivity, the solar cells did not show degradation in power conversion efficiency (PCE) even when the solar concentrations were increased to 300 suns. The open circuit voltage increased from 1.90 V to 2.15 V and the fill factor increased from 0.55 to 0.58 when the concentrations were increased from 1 sun to 300 suns. With the 300-sun illumination, the PCE was enhanced by approximately 33% compared with the 1-sun illumination.
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ISSN:1094-4087
1094-4087
DOI:10.1364/oe.22.0a1222