Influence and adjustment of carrier lifetimes in InGaAs/InAlAs photoconductive pulsed terahertz detectors: 6 THz bandwidth and 90dB dynamic range

• Published in: Optics express Vol. 22; no. 16; p. 19411
• Main Authors: Dietz, Roman J.B., Globisch, Björn, Roehle, Helmut, Stanze, Dennis, Göbel, Thorsten, Schell, Martin
• Format: Journal Article
• Language: English
• Published: United States 11.08.2014

We investigate the influence of Beryllium (Be) doping on the performance of photoconductive THz detectors based on molecular beam epitaxy (MBE) of low temperature (LT) grown In(0.53)Ga(0.47)As/In(0.52)Al(0.48)As multilayer heterostructures (MLHS). We show how the optical excitation power affects car...