The reliability of AlGaN/GaN high electron mobility transistors under step-electrical stresses - 马晓华 焦颖 马平 贺强 马骥刚 张凯 张会龙 张进成 郝跃 (Chinese physics B, 2011)
Keywords: AlGaN; Aluminum gallium nitrides; Degradation; Devices; Gallium nitrides; HEMT器件; High electron mobility transistors; Inverse; Piezoelectricity; Semiconductor devices; Stresses; 可靠性; 热电子效应; 电应力; 退化机制; 逆压电效应; 高电子迁移率晶体管