郝跃, 马. 焦. 马. 贺. 马. 张. 张. 张. (2011). The reliability of AlGaN/GaN high electron mobility transistors under step-electrical stresses. Chinese physics B, 20(12), 395-399. https://doi.org/10.1088/1674-1056/20/12/127305
Chicago Style (17th ed.) Citation郝跃, 马晓华 焦颖 马平 贺强 马骥刚 张凯 张会龙 张进成. "The Reliability of AlGaN/GaN High Electron Mobility Transistors Under Step-electrical Stresses." Chinese Physics B 20, no. 12 (2011): 395-399. https://doi.org/10.1088/1674-1056/20/12/127305.
MLA (9th ed.) Citation郝跃, 马晓华 焦颖 马平 贺强 马骥刚 张凯 张会龙 张进成. "The Reliability of AlGaN/GaN High Electron Mobility Transistors Under Step-electrical Stresses." Chinese Physics B, vol. 20, no. 12, 2011, pp. 395-399, https://doi.org/10.1088/1674-1056/20/12/127305.
Warning: These citations may not always be 100% accurate.