Analysis of switching times statistical distributions for perpendicular magnetic memories

Magnetization switching by injected spin-polarized current or applied field pulses is considered for perpendicular magnetic nanosystems with uniaxial symmetry and subject to thermal fluctuations. Such systems can model both perpendicular spin-transfer-torque magnetic random access memories and magne...

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Bibliographic Details
Published inJournal of magnetism and magnetic materials Vol. 475; pp. 652 - 661
Main Authors d’Aquino, M., Scalera, V., Serpico, C.
Format Journal Article
LanguageEnglish
Published Amsterdam Elsevier B.V 01.04.2019
Elsevier BV
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