Thermal Conductance of a Single-Electron Transistor

We report on combined measurements of heat and charge transport through a single-electron transistor. The device acts as a heat switch actuated by the voltage applied on the gate. The Wiedemann-Franz law for the ratio of heat and charge conductances is found to be systematically violated away from t...

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Published inPhysical review letters Vol. 119; no. 7; p. 077701
Main Authors Dutta, B, Peltonen, J T, Antonenko, D S, Meschke, M, Skvortsov, M A, Kubala, B, König, J, Winkelmann, C B, Courtois, H, Pekola, J P
Format Journal Article
LanguageEnglish
Published United States 18.08.2017
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Abstract We report on combined measurements of heat and charge transport through a single-electron transistor. The device acts as a heat switch actuated by the voltage applied on the gate. The Wiedemann-Franz law for the ratio of heat and charge conductances is found to be systematically violated away from the charge degeneracy points. The observed deviation agrees well with the theoretical expectation. With a large temperature drop between the source and drain, the heat current away from degeneracy deviates from the standard quadratic dependence in the two temperatures.
AbstractList We report on combined measurements of heat and charge transport through a single-electron transistor. The device acts as a heat switch actuated by the voltage applied on the gate. The Wiedemann-Franz law for the ratio of heat and charge conductances is found to be systematically violated away from the charge degeneracy points. The observed deviation agrees well with the theoretical expectation. With a large temperature drop between the source and drain, the heat current away from degeneracy deviates from the standard quadratic dependence in the two temperatures.
Author Skvortsov, M A
Dutta, B
König, J
Antonenko, D S
Winkelmann, C B
Pekola, J P
Peltonen, J T
Kubala, B
Meschke, M
Courtois, H
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  organization: Université Grenoble Alpes, CNRS, Institut Néel, 25 Avenue des Martyrs, 38042 Grenoble, France
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  givenname: J T
  surname: Peltonen
  fullname: Peltonen, J T
  organization: Low Temperature Laboratory, Department of Applied Physics, Aalto University School of Science, P.O. Box 13500, 00076 Aalto, Finland
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  givenname: D S
  surname: Antonenko
  fullname: Antonenko, D S
  organization: Moscow Institute of Physics and Technology, Moscow, 141700, Russia
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  surname: Meschke
  fullname: Meschke, M
  organization: Low Temperature Laboratory, Department of Applied Physics, Aalto University School of Science, P.O. Box 13500, 00076 Aalto, Finland
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  givenname: M A
  surname: Skvortsov
  fullname: Skvortsov, M A
  organization: Moscow Institute of Physics and Technology, Moscow, 141700, Russia
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  surname: Kubala
  fullname: Kubala, B
  organization: Institute for Complex Quantum Systems and IQST, University of Ulm, 89069 Ulm, Germany
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  givenname: J
  surname: König
  fullname: König, J
  organization: Theoretische Physik and CENIDE, Universität Duisburg-Essen, 47048 Duisburg, Germany
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  givenname: C B
  surname: Winkelmann
  fullname: Winkelmann, C B
  organization: Université Grenoble Alpes, CNRS, Institut Néel, 25 Avenue des Martyrs, 38042 Grenoble, France
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  givenname: H
  surname: Courtois
  fullname: Courtois, H
  organization: Université Grenoble Alpes, CNRS, Institut Néel, 25 Avenue des Martyrs, 38042 Grenoble, France
– sequence: 10
  givenname: J P
  surname: Pekola
  fullname: Pekola, J P
  organization: Low Temperature Laboratory, Department of Applied Physics, Aalto University School of Science, P.O. Box 13500, 00076 Aalto, Finland
BackLink https://www.ncbi.nlm.nih.gov/pubmed/28949696$$D View this record in MEDLINE/PubMed
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Snippet We report on combined measurements of heat and charge transport through a single-electron transistor. The device acts as a heat switch actuated by the voltage...
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