TCAD simulation of SOI TFETs and calibration of non-local band-to-band tunneling model

• Published in: Microelectronic engineering Vol. 98; pp. 334 - 337
• Main Authors: Biswas, Arnab, Dan, Surya Shankar, Royer, Cyrille Le, Grabinski, Wladyslaw, Ionescu, Adrian M.
• Format: Journal Article Conference Proceeding
• Language: English
• Published: Amsterdam Elsevier B.V 01.10.2012; Elsevier
• Subjects: Applied sciences; Calibration; Electronics; Exact sciences and technology; Molecular electronics, nanoelectronics; Non-local tunneling; Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices; SOI; TCAD simulation; Transistors; Tunnel FET; Non-local tunneling; TCAD simulation; Calibration; Tunnel FET; SOI; Crystallographic direction; Circuit design; Crystal orientation; Tunnel effect; Algorithm; Implementation; Nanoelectronics; Silicon on insulator technology; Field effect transistor; Band theory; Simulator; Computer aided design; Tunneling device
• ISSN: 0167-9317; 1873-5568
• DOI: 10.1016/j.mee.2012.07.077

[Display omitted] ► We report a simulation study of the non-local tunneling model applied to Tunnel FET. ► An algorithm to calibrate the non-local tunneling model with experiments is shown. ► Reduced mass is used as the only fitting parameter. ► Transverse optical phonon is used in the calculation for consistency with simulator. ► The tunneling generation rates for different crystal directions are calculated. This paper reports a simulation based study of the non-local tunneling model using a commercially available technology computer-aided design (TCAD) device simulator. Single gate Tunnel FET devices with 400nm gate length based on SOI technology are measured and compared with simulated data. A step by step algorithm to calibrate the nonlocal band-to-band tunneling model implemented in Synopsys Sentaurus TCAD has been shown, demonstrating the importance of model parameters. By using only the reduced mass as the fitting parameter we have obtained a physically meaningful fit with the measured data. The dependence of the tunneling generation rate on the different crystallographic directions is also demonstrated for the first time.